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    IN5456A

    Abstract: IN5456 IN5448A 1N5446ARL 1N5448ARL 1N5456A IN5446 A200 REACH in5448
    Text: — MOTORO~ SEMICONDUCTOR o TECHNICAL Silicon -ning Order this document by 1N5446ARUD DATA Diodes 1N5446ARL 1N5448ARL 1N5456A,., These are epitmial passivated abrupt junction tuning diodes designed for electronic tuning, FM, AFC and harmonic–generation


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    PDF 1N5446ARUD 1N5446ARL 1N5448ARL 1N5456A DO-204AA) N1-2447 IN5456A IN5456 IN5448A 1N5446ARL 1N5448ARL 1N5456A IN5446 A200 REACH in5448

    IN5468

    Abstract: in547 IN5476 IN5475 IN5446 IN546 IN5451 IN5442 1N950 IN5472
    Text: VARACTOR SELECTOR GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 Leakage Current >100 <10nA low Cost Comments <1.0M* Replaces M V 8 3 0 -M V 8 4 0 D O -7 G lass C V830CV840 X C V1006-16CV1106-16 X X C V 1 62 0CV1650


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    PDF 100pf CV830-CV840 MV830-MV84G CV1006-16-CV1106-16 FV1006-16, FV1106-16 CV1620-CV1650 MV1620-MV1650 CV1652-CV1666 MV1652-MV1666 IN5468 in547 IN5476 IN5475 IN5446 IN546 IN5451 IN5442 1N950 IN5472

    in547

    Abstract: in5448 IN5446 IN5450 IN5454 IN5461 IN5452 IN5444 IN5475 IN5466
    Text: SÔE D TELEDYNE COMPONENTS ö T lT b O S HIG H Q Q U O tiL iS Ü ì @ • 1N5441 THRU S IL IC O N V A R A C T R O N 1N5476 V O L T A G E -V A R IA B L E C A P A C IT A N C E DIO D ES GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN5461-76 B A N D C


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    PDF 1N5441 1N5476 IN5461-76 IN5467 IN5448 IN5449 IN5469 IN5450 IN5470 IN5451 in547 IN5446 IN5454 IN5461 IN5452 IN5444 IN5475 IN5466

    IN5450

    Abstract: IN5444 IN544 5lo300 IN5470 in5476
    Text: FAI HO. ¡ ' S n 00000000000 - w - m f H IG H Q S IL IC O N V A R A C T R O N V O L T A G E ^ V A R !A B L E C A P A C IT A N C E D IO D E S GEOMETRY 415 JA N A N D JA N -TX VER SIO N AVAILABLE IN 546176 B A N D C > Q @ - 4 V t>C , 5 0 M H * to 6 0 0 • LOW LEAKAG E


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    PDF IN5473 IN5474 IN547S IN5476 IN5450 IN5444 IN544 5lo300 IN5470 in5476

    IN5148

    Abstract: IN5139 IN5476 IN5441A IN546 1n5441 1N5461 1N5462 IN5456A IN5461A
    Text: ALPHA IND/ SEMI CONDUCTOR 4ÔE D • DSÛ5443 DDD1 3 DS b07 ■ ALP VHF-UHF Abrupt Tuning Diodes Features ■ ■ ■ ■ ■ ■ High Q Large Tuning Range Standard Capacitance Tolerances -1 0 % , 5%, 2% Computer Matched for Tracking optional Low Leakage Current


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    PDF DDD13DS MIL-STD-750 IN5461A IN5476A IN5441A IN5456A IN5139 IN5148 1N5453 1NS454 IN5148 IN5476 IN546 1n5441 1N5461 1N5462

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    1NS14

    Abstract: 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A
    Text: m s ü H ERMETICALLY S E A L E D elect: ABRUPT - HYPERABRUPT Uf G L A S S P A C K A G ED TUNING D IO D ES ELE C T R IC A L CHARACTERISTICS T a = 25° C unle« otherwise noted Diode Cap (CT)* •M0% M V /1 MH/ G EN ER AL LO W IN D U C T A N C E M IN IA T U R E G L A S S


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    PDF SQ1213A MV83Z MV833 MVB34 MV835 MVS36 MV837 MV838 MVB40 1NS14 1N487A G610A 1N473A 1MH12 PEC 736 amk 30-2 HA1I34A

    wiring diagram audio amplifier ic 6283

    Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
    Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor


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    PDF 4L3052 4L3056 wiring diagram audio amplifier ic 6283 germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838

    DIODE 1N54

    Abstract: IN5476A IN5140 IN5472A INS139 IN5148 IN6144 in647 IN5469A IN5441A
    Text: LÔRAL/FREâUENCY/SENICOND E^ D • 557^51 7 *^ Û ? - / ? □□□OflDfl fl ■ JEDEC TUNING VARACTORS JEDEC REGISTERED FEATURES 1N 5139 , A through 1N 5148, A 1N 5441, A , B, C through 1N 5456, A , B, C 1N 54 6 1 , A , B, C through 1N 5476, A , B, C DO-7 Glass Package


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    PDF 1N5139, 1N5148, 1N5441, 1N5456, 1N5461, 1N5476, C4/C60 f-60MHz 1N547â 1N5139 DIODE 1N54 IN5476A IN5140 IN5472A INS139 IN5148 IN6144 in647 IN5469A IN5441A

    in5388

    Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
    Text: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor


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    PDF plu300 in5388 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


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    PDF 1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt