Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IMS1800M Search Results

    IMS1800M Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IMS1800M Inmos High Performance 256K x 1 Static RAM MIL-STD-883C Scan PDF

    IMS1800M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C mos Advance Information DESCRIPTION FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1.2 Micron Design Rules • 256K x 1 Bit Organization • 30, 35 and 45 ns Address Access Times


    OCR Scan
    PDF IMS1800M MIL-STD-883C 300-mil 256Kx1

    inmos static ram

    Abstract: IMS1800M
    Text: IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C Advance Information mos DESCRIPTION FEATURES • INMOS' Very High Speed CMOS • Advanced Process -1 .2 Micron Design Rules • 256K x 1 Bit Organization • 30, 35 and 45 ns Address Access Times


    OCR Scan
    PDF IMS1800M MIL-STD-883C 300-mil 256Kx1 inmos static ram

    Untitled

    Abstract: No abstract text available
    Text: •■■■ . ■"■■■■■■ IMS1800M CMOS High Performance 256K x 1 Static RAM MIL-STD-883C IH IH HH SSSSSSSS "■■■■" ] m K S A dvance Information DESCRIPTION FEATURES • INMOS' Very High Speed CMOS > Advanced Process -1.2 Micron Design Rules


    OCR Scan
    PDF IMS1800M MIL-STD-883C 300-mil 256Kx1

    MKB6116

    Abstract: MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420 MK48Z02BU
    Text: SELECTION GUIDE ZEROPOW ERS ORGANISATION DESCRIPTION PART NUMBER ICCma SPEEDns ACTIVE TTL mA@ns STBY CMOS STBY VCC TEMP RANGE PACKAGE -2 K X 8 MK48Z02 120,150,200,250 90 3 1 5V + 10 -5% 0 to + 70°C P DIP 24 -2 K X 8 UL-CERTIFIED MK48Z02BU 120,150,200,250


    OCR Scan
    PDF 32KX8 MK48Z32 MK48Z30A MK48Z30 MK48Z19BU MK46Z19 MK48Z09BU MK48Z02 MK48Z02BU MK48Z12 MKB6116 MKB4501 IMS1630 RAM MK6116 MK48Z18BU IMS1420

    K4505

    Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
    Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4


    OCR Scan
    PDF IMS1203 IMS1203M IMS1223 IMS1223M 16Kx1 IMS1400M IMS1403 IMS1403M/LM K4505 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80

    lt 6655

    Abstract: No abstract text available
    Text: IMS1800 CMOS High Performance 256K x 1 Static RAM I mos FEATURES DESCRIPTION • • • • • • • • • The INMOS IMS1800 is a high performance 256Kx1 CMOS Static RAM. The IMS1800 provides maximum density and speed enhancements with the additional


    OCR Scan
    PDF IMS1800 300-mil 256Kx1 lt 6655

    IMS1800E-25

    Abstract: IMS1800M IMS1800P-25 IMS1800S-25 IMS1800W-25
    Text: IMS1800 CMOS High Performance 256K x 1 Static RAM i irnos DESCRIPTION FEATURES IN MOS' Very High Speed CMOS Advanced Process -1 .2 Micron Design Rules 256K x 1 Bit Organization 2 5 .3 0 , 35 and 45 ns Address Access Times 2 5 .3 0 , 35 and 45 ns C hip Enable Access Times


    OCR Scan
    PDF IMS1800 300-mil 256Kx1 cycle76 IMS1800 IMS1800E-25 IMS1800M IMS1800P-25 IMS1800S-25 IMS1800W-25

    Untitled

    Abstract: No abstract text available
    Text: IMS1800 CMOS High Performance 256K x 1 Static RAM inmos DESCRIPTION FEATURES • • • • • • • • • INMOS' Very High Speed CMOS Advanced Process -1 .2 Micron Design Rules 256K x 1 Bit Organization 2 5 ,3 0 ,3 5 and 45 ns Address Access Times 25, 30, 35 and 45 ns C hip Enable Access Times


    OCR Scan
    PDF IMS1800 300-m 256Kx1 S1800