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    16KX1 Search Results

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    Part ECAD Model Manufacturer Description Download Buy
    CY7C167A-35PC Rochester Electronics Standard SRAM, 16KX1, 35ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20 Visit Rochester Electronics Buy
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    National Semiconductor Corporation 16KX1

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    16KX1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CY7C4255

    Abstract: CY7C4265 CY7C42X5 only-10
    Text: fax id: 5413 1CY 7C42 65 CY7C4255 CY7C4265 PRELIMINARY 8K/16Kx18 Deep Sync FIFOs Features are 18 bits wide and are pin/functionally compatible to the CY7C42X5 Synchronous FIFO family. The CY7C4255/65 can be cascaded to increase FIFO depth. Programmable features


    Original     		CY7C4255 CY7C4265 8K/16Kx18 CY7C42X5 CY7C4255/65 CY7C4255) CY7C4265) 100-MHz CY7C4255 CY7C4265 only-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: ENERGY METER: Embedded DSP AFE Embedded dspConverters AD73560 AD73560 8/9/01 40 80 2:11 PM AD73360 AD73360 ADSP2185L ADSP2185L 52 52 19 19 16.7 to 26 16.7 to 26 8Kx24 16Kx24 Ed Grokulsky 8Kx16 16Kx16 Rev-4 12/03/00 YES YES YES YES YES YES A A 119 BGA 119 BGA


    Original     		AD73560 AD73360 ADSP2185L 8Kx24 16Kx24 8Kx16 16Kx16 PDF

    CY7C4255

    Abstract: CY7C4265 CY7C42X5 cy7c4255-15ac
    Text: fax id: 5413 1CY 7C42 65 CY7C4255 CY7C4265 8K/16Kx18 Deep Sync FIFOs Features are 18 bits wide and are pin/functionally compatible to the CY7C42X5 Synchronous FIFO family. The CY7C4255/65 can be cascaded to increase FIFO depth. Programmable features include Almost Full/Almost Empty flags. These FIFOs provide


    Original     		CY7C4255 CY7C4265 8K/16Kx18 CY7C42X5 CY7C4255/65 CY7C4255) CY7C4265) 100-MHz CY7C4255 CY7C4265 cy7c4255-15ac PDF

    CY7C4255V

    Abstract: CY7C4265V CY7C42X5V
    Text: fax id: 5425 CY7C4255V CY7C4265V PRELIMINARY 8K/16Kx18 Low Voltage Deep Sync FIFOs Features Functional Description • 3.3V operation for low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out FIFO


    Original     		CY7C4255V CY7C4265V 8K/16Kx18 CY7C4255V) CY7C4265V) 67-MHz CY7C4255V/65V CY7C42X5V CY7C4255V CY7C4265V PDF

    6116 RAM

    Abstract: 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM
    Text: Integrated Device Technology, Inc. As of 10/10/95 Page 1 Alpha-Numeric List of Products Doc ID Product Product Description Speeds Pkgs Temp Volt Avail 2760 10474 1KX4 CORNER POWER Bi SRAM, ECL-10K I/O 4ns C 5V Now 2759 10480 16KX1 Bi SRAM, ECL-10K I/O 4ns


    Original     		ECL-10K 16KX1 64KX1 16KX4 64KX4 6116 RAM 7217 up down counter ram 6116 256KB static RAM PY 88 74FST3390 7M1002 c 3198 c 3198 transistor dual-port RAM PDF

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. BiCMOS StaticRAM 240K 16Kx15-BIT CACHE-TAG RAM For PowerPC and RISC Processors PRELIMINARY IDT71216 This high-speed M A T C H signal, with tADM times as fast as 10ns, provides the fastest possible enabling of secondary


    OCR Scan     		16Kx15-BIT) IDT71216 /12ns 4A25771 16KX15 200mV PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5413 CY7C4255 CY7C4265 3F CYPRESS 8K/16Kx18 Deep Sync FIFOs Features • H ig h-speed , low -pow er, first-in firs t-o u t F IF O m em o ries • 8K x 18 (C Y 7 C 42 55 ) • 16K x 18 (C Y 7 C 42 65 ) • 0.5 m icron C M O S fo r o p tim u m sp ee d /p o w e r


    OCR Scan     		CY7C4255 CY7C4265 8K/16Kx18 PDF

    733-ISSI

    Abstract: No abstract text available
    Text: 16KX1 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time 15,20,25ns Max. • Low active power- 200mW (Typical) • Low standby power-55mW (Typical) TTL standby -10(iW (Typical) CMOS standby (L-version) • Fully static operation-no clock or refresh required


    OCR Scan     		16KX1 200mW power-55mW IS61C67 61C67 IS61C67-15N IS61C67-L15N IS61C67-20N IS61C67-L20N IS61C67-25N 733-ISSI PDF

    IMS1400P

    Abstract: ims1400p-55 16Kx1 IMS1400 IMS1400S35 IMS1400P35 A10C A12C AA1035 16kx1 static ram
    Text: r - IMS1400 • ■ ■ ■ TM High Performance 16Kx1 Static RAM DDUTIOS FEATURES 35, 45 and 55ns Chip Enable access Maximum active power 660mW Maximum standby power 110mW Single 5 volt ± 10% supply E CE power down function TTL compatible inputs and output


    OCR Scan     		IMS1400 16Kx1 660mW 110mW IMS1400 660mW. IMS1400P ims1400p-55 IMS1400S35 IMS1400P35 A10C A12C AA1035 16kx1 static ram PDF

    Untitled

    Abstract: No abstract text available
    Text: DPE832V 8K X 32 CMOS EEPROM VERSAPAC D ESC R IPT IO N : The DPE832V is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organized as 8KX32, 16KX16 or 32K X 8. The module is built with four low-power CMOS 8K X 8


    OCR Scan     		DPE832V DPE832V 8KX32, 16KX16 16-bit 32-bit 32-BWDW 500mV PDF

    Untitled

    Abstract: No abstract text available
    Text: 16KX1 BASED Dense-Pac Microsystems, Inc . C M O S SRAM FAM ILY DESCRIPTION: The Dense*Pac 16KX1 Based family consists of fully st atic CMOS random access memories organized as described below. These memories are ideally suited for use in large computers, signal processors or battery backup hand held computers. They


    OCR Scan     		16KX1 DPS257 DPS166Ã DPS288 DPS16X4 DPS81C64 DPS7M464 DPS166167 DPS8M464 PDF

    Untitled

    Abstract: No abstract text available
    Text: □PM D PS16616 7 Dense-Pac Microsystems. Inc. 256KX1/128KX2 C M O S SRAM MODULE O NOT RECOMENDED FOR NEW DESIGNS D E SC R IP T IO N : The D P S1 6 6 1 6 7 is a 256K X 1 or 128KX2 bit Static Random Access M em ory SR A M fabricated using sixteen 16KX1 C M O S SRAM s. The memory utilizes


    OCR Scan     		PS16616 256KX1/128KX2 128KX2 16KX1 256KX1 PDF

    K4505

    Abstract: 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80
    Text: ALPHANUMERICAL INDEX unless otherwise specified all Static RAMs listed are produced in CMOS technology Part Nuraöer Organization 4Kx1 IMS1203 ( 4Kx1 IMS1203M , 1Kx4 IMS1223 1Kx4 IMS1223M ' 16Kx1 IMS1400M 16Kx1 IMS1403 ' IMS1403M/LM f 16Kx1 IM S1420M A 4Kx4


    OCR Scan     		IMS1203 IMS1203M IMS1223 IMS1223M 16Kx1 IMS1400M IMS1403 IMS1403M/LM K4505 1601l 4Kx4 SRAM MK48T87B Z30A SRAM 2kx8 sram IMS1630 256KX1 MK41S80 PDF

    Untitled

    Abstract: No abstract text available
    Text: P4C218 LATCHED HIGH-SPEED 16Kx16 STATIC RAM ADVANCE INFORMATION X FEATURES • Full CMOS Design ■ Power Down Mode When Deselected ■ Supports Processor Speeds to 60MHz ■ 5V ±10% Power Supply ■ On-Chip Address and Chip Enable Latch ■ Output Enable Control


    OCR Scan     		P4C218 16Kx16 60MHz 52-Pin P4C218 144-bit PR3000A/PR3400. R3000 PDF

    Untitled

    Abstract: No abstract text available
    Text: In teg rated D evice Technology, Inc. BiCMOS StaticRAM 240K 16Kx15-BIT CACHE-TAG RAM For PowerPC and RISC Processors FEATURES: • 16K x 15 Configuration - 1 2 TAG Bits - 3 Separate I/O Status Bits (Valid, Dirty, Write Through) • Match output uses Valid bit to qualify MATCH output


    OCR Scan     		16Kx15-BIT) 9/10/12ns 200mV PN80-1) 2S771 DD2174L 544-SRAM PDF

    CY7C

    Abstract: No abstract text available
    Text: fax id: 5413 CY7C4255 CY7C4265 8K/16Kx18 Deep Sync FIFOs Featu res • High-speed, low-power, first-in first-out FIFO memories . 8K x 18 (CY7C4255) • 16K x 18 (CY7C4265) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle


    OCR Scan     		CY7C4255 CY7C4265 8K/16Kx18 CY7C4255) CY7C4265) 100-MHz 64-pin 64-pherein CY7C PDF

    s-1311

    Abstract: No abstract text available
    Text: C Integrated DeviceTechnology, Inc IDT 7M656L 256K CMOS STATIC RAM MODULE FEATURES: DESCRIPTION: • H ig h -d e n sity 2 5 6 K -b it C M O S s ta tic RAM m o du le • C u sto m e r-co n fig u re d to 16Kx16, 32K x8 o r 64Kx4 • Fast a cce ss tim e s T h e ID T7M 656 Is a 256 K -b it h ig h -s p e e d C M O S sta tic RAM c o n ­


    OCR Scan     		7M656L 16Kx16, 64Kx4 IDT6167S IDT7M656L MIL-STD-883 7M656 S13-16 s-1311 PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5413 CYPRESS CY7C4255 CY7C4265 PRELIMINARY 8K/16Kx18 Deep Sync FIFOs Features H ig h -s p e ed , low -pow er, first-in firs t-o u t F IF O m e m o ries 8 K x 18 (C Y 7 C 42 55 ) 16K x 18 (C Y 7 C 42 65 ) 0.5 m icro n C M O S fo r o p tim u m sp ee d /p o w e r


    OCR Scan     		CY7C4255 CY7C4265 8K/16Kx18 PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5425 ST' CY7C4255V PRELIMINARY _ CY7C4265V 8K/16Kx18 Low Voltage Deep Sync FIFOs Functional Description Features • 3.3V operation for low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out FIFO


    OCR Scan     		CY7C4255V CY7C4265V 8K/16Kx18 CY7C4255V) CY7C4265V) 67-MHz CY7C4255V/65V CY7C42X5V PDF

    Untitled

    Abstract: No abstract text available
    Text: DPS166167 □PM Dense-Pac Microsystems. Inc. ^ 256KX1/128KX2 CMOS SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS166167 is a 256K X 1 or 128KX2 bit Static Random Access Memory SRAM fabricated using sixteen 16KX1 C M O S SRAMs. The memory utilizes


    OCR Scan     		DPS166167 256KX1/128KX2 DPS166167 128KX2 16KX1 S166167 125-C PDF

    Untitled

    Abstract: No abstract text available
    Text: MDI EDH816H16C25/35/45 High Speed 256K SRAM Module 16Kx16 Static RAM CMOS, High Speed Module Features The EDH816H16C is a 256K bithigh speed CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless chip carriers, mounted on a multilayered ceramic substrate.


    OCR Scan     		EDH816H16C25/35/45 16Kx16 EDH816H16C 16Kx4 MIL-STD-883C, EDH316H16C25/35/45 EDH816H16C2S/35/45 PDF

    s-1311

    Abstract: D15C
    Text: 256K CMOS STATIC RAM MODULE ID T 7M 656L FEATURES: DESCRIPTION: • • • The IDT7M656 is a 256K-bit high-speed CMOS static RAM con­ structed on a multilayered ceramic substrate using 16 IDT6167 16Kx1 static RAMs inleadiesschipcarriers. Making 4 chip select


    OCR Scan     		7M656L 256K-bit 16Kx16, 32Kx8 64Kx4 IDT6167S 40-pin, s13-15 IDT7M656L 7M656 s-1311 D15C PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI Electronic Designs Inc. ^ — •— ^ «■* ■— i ED128160CED128165C ^ ^ • High Performance Synchronous SRAM 16Kx16 Monolithic High Speed Synchronous Static RAM Features The EDI2816XC is a 262,144 bit synchronous static RAM organized as 16Kx16, with advanced peripheral


    OCR Scan     		ED128160CED128165C 16Kx16 EDI2816XC 16Kx16, EDI28160C) EDI28165C) EDI28160C PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI816H16C 2 5 / 35/45 ^ E D Module I Th e fu tu re . . . today. 16Kx16 SRAM CMOS, High Speed Module The EDI816H16C is a 256K bit High Speed, CMOS Static RAM module based on four 16Kx4 Static RAMs in leadless Chip Carriers, mounted on a multilayered ceramic substrate.


    OCR Scan     		EDI816H16C 16Kx16 EDI816H16C 16Kx4 AM-00019 EDH816H16C-25CC-Z EDH816H16C-35CC-Z EDH816H16C-45CC-Z EDH816H16C PDF