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    IGBT 600V 15A Search Results

    IGBT 600V 15A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    IGBT 600V 15A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    600v 15a

    Abstract: igbt 600v 6mbi 6MBI 15LS-060 IGBT 600V 15A
    Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A


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    PDF 15LS-060 600v 15a igbt 600v 6mbi 6MBI 15LS-060 IGBT 600V 15A

    600v

    Abstract: igbt igbt 600V
    Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 972 733-1700 - www.fujisemiconductor.com


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    PDF 15LS-060 600v igbt igbt 600V

    igbt 600V

    Abstract: 15LS-060 6MBI 15LS-060
    Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com


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    PDF 15LS-060 igbt 600V 15LS-060 6MBI 15LS-060

    Untitled

    Abstract: No abstract text available
    Text: SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 15A


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    PDF SIGC14T60NC Q67050-A4135A001 7232-M,

    Untitled

    Abstract: No abstract text available
    Text: SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives ICn 15A


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    PDF SIGC14T60NC Q67050-A4135A001 7232-M,

    Untitled

    Abstract: No abstract text available
    Text: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3


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    PDF APTGV30H60T3G

    APT0406

    Abstract: APT0502 APTGV30H60T3G
    Text: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module 13 14 Q1 Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C Application CR3 CR1 18 Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Q3 11 • Solar converter


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    PDF APTGV30H60T3G APT0406 APT0502 APTGV30H60T3G

    IXGH36N60B3C1

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH36N60B3C1 = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES


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    PDF IC110 IXGH36N60B3C1 100ns 40kHz O-247 36N60B3C1 IXGH36N60B3C1

    75N60

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


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    PDF IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 75N60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC14T60NC Q67050-A4135sawn 7232-M,

    7232-E

    Abstract: No abstract text available
    Text: Preliminary SIGC14T60N IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60N 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC14T60N Q67041-A4689A001 320es 7232-E, 7232-E

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


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    PDF IC110 IXXH75N60B3D1 125ns O-247 IF110 75N60B3

    IXGH36N60B3C1

    Abstract: IF110 g36n60b3c1 Schottky Diode 400V 15A
    Text: Preliminary Technical Information IXGH36N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 36A 1.8V 100ns Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES


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    PDF IXGH36N60B3C1 IC110 100ns 40kHz O-247 36N60B3C1 IXGH36N60B3C1 IF110 g36n60b3c1 Schottky Diode 400V 15A

    SIGC14T60NC

    Abstract: No abstract text available
    Text: Preliminary SIGC14T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC14T60NC 600V This chip is used for: • IGBT Modules G Applications: • drives


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    PDF SIGC14T60NC Q67050-A4135A001 3200in 7232-M, SIGC14T60NC

    APT0406

    Abstract: APT0502 NTC 10 thermistor
    Text: APTCV60TLM24T3G Three level inverter CoolMOS & Trench + Field Stop IGBT Power Module Trench & Field Stop IGBT Q2, Q3: VCES = 600V ; IC = 75A @ Tc = 80°C CoolMOS Q1, Q4: VDSS = 600V ; ID = 70A @ Tc = 80°C Application • Solar converter • Uninterruptible Power Supplies


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    PDF APTCV60TLM24T3G APT0406 APT0502 NTC 10 thermistor

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 VCES = 600V IC110 = 36A VCE sat ≤ 1.4V TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


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    PDF IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 IC110 O-263 O-220 36N60A3 7-03-08-A

    ixgh48n60c3c1

    Abstract: IXGH48N60 48n60 IF110 48N60C3
    Text: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings


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    PDF IXGH48N60C3C1 IC110 100kHz O-247 IF110 48N60C3C1 ixgh48n60c3c1 IXGH48N60 48n60 IF110 48N60C3

    g36N60a

    Abstract: diode fr 307 IF110
    Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGH36N60A3D4 VCES = 600V IC110 = 36A VCE sat ≤ 1.4V Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR


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    PDF IXGH36N60A3D4 IC110 O-247 IF110 8-06B g36N60a diode fr 307 IF110

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT with Diode VCES = 600V IC110 = 36A VCE sat ≤ 1.4V IXGH36N60A3D4 Ultra Low Vsat PT IGBT for up to 5kHz switching TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR


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    PDF IC110 IXGH36N60A3D4 O-247 IF110 8-06B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXGH48N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 2.5V 38ns High Speed PT IGBT for 40 - 100kHz Switching TO-247 Symbol Test Conditions VCES TJ = 25°C to 150°C 600


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    PDF IXGH48N60C3C1 IC110 100kHz O-247 IF110 48N60C3C1

    50N60C3

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH50N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C


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    PDF IXXH50N60C3D1 IC110 O-247 IF110 50N60C3

    GV 265 diode

    Abstract: CM15MD-12H E80276
    Text: MITSUBISHI IGBT MODULES CM15MD-12H MEDIUM POWER SWITCHING USE INSULATED TYPE CM15MD-12H ¡IC . 15A ¡VCES . 600V ¡Insulated Type


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    PDF CM15MD-12H E80276 E80271 GV 265 diode CM15MD-12H E80276

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


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    PDF IC110 IXXH75N60C3D1 O-247 IF110 75N60C3

    mig15j

    Abstract: 15j80
    Text: TOSHIBA TENTATIVE M IG 15J805 TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG15J805 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : Z<j> 15A/600V IGBT


    OCR Scan
    PDF 15J805 MIG15J805 5A/600V 961001EAA1 mig15j 15j80