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    Untitled

    Abstract: No abstract text available
    Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Dec. 2004 1.1 1. Corrected PIN ASSIGNMENT A12 to NC Jan. 2005 1.2 1. Changed IDD3P and IDD3PS 3mA to 5mA


    Original     		PDF 128Mb 16bits -40oC 128Mbit 8Mx16bit) HY57V281620E

    HY57V281620ELT

    Abstract: HY57V281620ET
    Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Dec. 2004 1.1 1. Corrected PIN ASSIGNMENT A12 to NC Jan. 2005 1.2 1. Changed IDD3P and IDD3PS 3mA to 5mA


    Original     		PDF 128Mb 16bits -40oC 128Mbit 8Mx16bit) HY57V281arge HY57V281620E 400mil HY57V281620ELT HY57V281620ET

    hy57v281620etp

    Abstract: 35A11 HY57V281620ELT HY57V281620ET
    Text: 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Dec. 2004 1.1 1. Corrected PIN ASSIGNMENT A12 to NC Jan. 2005 1.2 1. Changed IDD3P and IDD3PS 3mA to 5mA


    Original     		PDF 128Mb 16bits -40oC 500uA 128Mbit 8Mx16bit) HY57V281620E 400mil 54pin hy57v281620etp 35A11 HY57V281620ELT HY57V281620ET

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 64Mx8 TS128MLQ64V6J TS128MLQ64V6J 64bits DDR2-667 16pcs 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 533 Registered DIMM 1024MB With 64Mx8 CL4 TS128MQR72V5J Placement Description The TS128MQR72V5J is a 128M x 72bits DDR2-533 Registered DIMM. The TS128MQR72V5J consists of 18 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA package, 2 pcs register in 96 ball uBGA package, 1 pcs


    Original     		PDF 240PIN 1024MB 64Mx8 TS128MQR72V5J TS128MQR72V5J 72bits DDR2-533 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed


    Original     		PDF 200PIN 256MB 32Mx16 TS32MSQ64V4M TS32MSQ64V4M 64bits DDR2-400 32Mx16its 200-pin

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 256MB 32Mx16 TS32MMQ64V5M TS32MMQ64V5M 64bits DDR2-533 32Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 800 Unbuffered DIMM 512MB With 64Mx8 CL5 TS64MLQ64V8J Description Placement The TS64MLQ64V8J is a 64M x 64bits DDR2-800 Unbuffered DIMM. The TS64MLQ64V8J consists of 8 pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed


    Original     		PDF 240PIN 512MB 64Mx8 TS64MLQ64V8J TS64MLQ64V8J 64bits DDR2-800 64Mx8bits 240-pin

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 800 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V8J Description Placement The TS128MLQ64V8J is a 128M x 64bits DDR2-800 Unbuffered DIMM. The TS128MLQ64V8J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin


    Original     		PDF 240PIN 64Mx8 TS128MLQ64V8J TS128MLQ64V8J 64bits DDR2-800 16pcs 64Mx8bits 240-pin

    45VM32160D

    Abstract: No abstract text available
    Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF IS42/45VM32160D 32Bits IS42/45VM32160D -40oC 16Mx32 IS42VM32160D-6BLI IS42VM32160D-75BLI 90-ball 45VM32160D

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI

    IS43DR81280B

    Abstract: IS46DR16640B IS43DR16640B-25DBL IS46DR16640B-3DBLA IS43DR16640B IS43DR16640B-3DBL
    Text: IS43/46DR81280B/L, IS43/46DR16640B/L PRELMINARY INFORMATION AUGUST 2012 1Gb x8, x16 DDR2 SDRAM FEATURES •               Clock frequency up to 400MHz 8 internal banks for concurrent operation


    Original     		PDF IS43/46DR81280B/L, IS43/46DR16640B/L 400MHz cycles/64 60ball 60-ball IS43DR81280B IS46DR16640B IS43DR16640B-25DBL IS46DR16640B-3DBLA IS43DR16640B IS43DR16640B-3DBL

    IS42S16160D

    Abstract: IS42S16160D-7TLI
    Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TLI

    DDR2-400

    Abstract: DDR2-533 K4T56043QF K4T56083QF
    Text: 256MB, 512MB, Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 256MB, 512MB, Registered DIMMs DDR2 Registered DIMM Ordering Information


    Original     		PDF 256MB, 512MB, 240pin 256Mb 72-bit M393T3253FG0-CD5/CC 256MB 32Mx72 DDR2-400 DDR2-533 K4T56043QF K4T56083QF

    ba1s

    Abstract: No abstract text available
    Text: IS43LR32400E Advanced Information 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43LR32400E is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The address lines are multiplexed with the Data


    Original     		PDF IS43LR32400E 32Bits IS43LR32400E Figure38 90Ball -25oC 4Mx32 IS43LR32400E-6BLE ba1s

    NT1GT64U8HA0BN

    Abstract: NT1GT64U8HA0BN-3C DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 SSTL-18 NT1GT64U8HA0BN-37B
    Text: NT1GT64U8HA0BN Green 1GB : 128M x 64 PC2-3200 / PC2-4200 / PC2-5300 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on 64Mx8 DDR2 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) • 128Mx64 Unbuffered DDR2 SO-DIMM based on 64Mx8 DDR2


    Original     		PDF NT1GT64U8HA0BN PC2-3200 PC2-4200 PC2-5300 64Mx8 200-Pin 128Mx64 PNT1GT64U8HA0BN NT1GT64U8HA0BN NT1GT64U8HA0BN-3C DDR2-400 DDR2-533 DDR2-667 SSTL-18 NT1GT64U8HA0BN-37B

    NT5TU32M16CG-BD

    Abstract: NT5TU32M16CG-be NT5TU64M8CE
    Text: NT5TU128M4CE / NT5TU64M8CE /NT5TU32M16CG 512Mb DDR2 SDRAM C-Die Features • 1.8V ± 0.1V Power Supply Voltage • Data-Strobes: Bidirectional, Differential • Programmable CAS Latency: 3,4,5,6 and 7 • 4 internal memory banks • Programmable Additive Latency: 0, 1, 2, 3, and 4


    Original     		PDF NT5TU128M4CE NT5TU64M8CE /NT5TU32M16CG 512Mb NT5TU32M16CG-BD NT5TU32M16CG-be

    dm 533

    Abstract: K4T5108 M393T5750BS0-CD5 DDR2-533
    Text: 512MB, 1GB, 2GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 512MB, 1GB, 2GB Registered DIMMs DDR2 Registered DIMM Ordering Information


    Original     		PDF 512MB, 240pin 512Mb 72-bit M393T6553BG0-CD5/CC 512MB 64Mx72 64Mx8 K4T51083QB) dm 533 K4T5108 M393T5750BS0-CD5 DDR2-533

    HY57V641620B

    Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.


    Original     		PDF HY57V651620B 16Bit HY57V641620B 864-bit 576x16. 400mil 54pin HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75

    7F7F7F0B00000000

    Abstract: PC2-5300 PC2-6400 NT512T64UH8B0FN NT1GT64U8HB0BN-3C 32MX16
    Text: NT256T64UH4B0FN / NT512T64UH8B0FN NT1GT64U8HB0BN 256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 32Mx16/64Mx8 SDRAM B-Die Features • Performance:


    Original     		PDF NT256T64UH4B0FN NT512T64UH8B0FN NT1GT64U8HB0BN 256MB: 512MB: PC2-4200 PC2-5300 PC-6400 DDR2-533/667/800 32Mx16/64Mx8 7F7F7F0B00000000 PC2-6400 NT512T64UH8B0FN NT1GT64U8HB0BN-3C 32MX16

    Untitled

    Abstract: No abstract text available
    Text: FMD4A32LCx–30Ex 128M 4Mx32 Low Power DDR SDRAM Revision 0.2 Jan. 2009 Rev. 0.2, Jan. ‘09 1 FMD4A32LCx–30Ex Document Title 128M(4Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Jul. 2nd , 2008 Preliminary 0.0 Initial Draft


    Original     		PDF FMD4A32LCxâ 4Mx32)

    Untitled

    Abstract: No abstract text available
    Text: FMD4B32LBx–37Ex 256M 8Mx32 Low Power DDR SDRAM Revision 1.0 Jan. 2009 Rev. 1.0, Jan. ‘09 1 FMD4B32LBx–37Ex Document Title 256M(8Mx32) Low Power DDR SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Jan. 17th, 2008


    Original     		PDF FMD4B32LBxâ 8Mx32)

    W971GG6JB

    Abstract: 8X12 DDR2-667 DDR2-800 0A80
    Text: W971GG6JB 8M  8 BANKS  16 BIT DDR2 SDRAM Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4


    Original     		PDF W971GG6JB W971GG6JB 8X12 DDR2-667 DDR2-800 0A80

    Untitled

    Abstract: No abstract text available
    Text: 240PIN DDR2 533 Unbuffered DIMM 512MB With 64Mx8 CL4 TS64MLQ72V5J Description Placement The TS64MLQ72V5J is a 64M x 64bits DDR2-533 Unbuffered DIMM. The TS64MLQ72V5J consists of 9 pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed


    Original     		PDF 240PIN 512MB 64Mx8 TS64MLQ72V5J TS64MLQ72V5J 64bits DDR2-533 240-pin