1232l
Abstract: dallas 2502 SOIC150 CARSEM
Text: RELIABILITY MONITOR SAMPLING PLAN PRODUCT FAMILY TECHNOLOGY ASSEMBLY/ALT PACKAGE 1991 AUTO. ID. Battery Dallas Touch Can 2401 AUTO. ID. 0.6 Ox Ni Carsem 03 TO92 2502 AUTO. ID. 0.6 Ox Ni EPROM Carsem 06 TSOC 2502 AUTO. ID. 0.6 Ox OxyNi EPROM Carsem 08 SOIC150
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SOIC150
21S07A
2118M
1232l
dallas 2502
CARSEM
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CARSEM
Abstract: SOIC-36 2118M 1232L 80CH11
Text: RELIABILITY MONITOR SAMPLING PLAN PRODUCT 2401 2502 2502 1992 1233 1232L 1000 1803 1267 80C320 87C520 5002 80CH11 3801 3816C 1230 1775 2154 21352 21Q43A 2175 21S07A 2108 2118M 1620 1302 12887 1643 1646 1644 9034 FAMILY TECHNOLOGY AUTO. ID. 0.6 Ox Ni AUTO. ID.
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1232L
80C320
87C520
80CH11
3816C
21Q43A
21S07A
2118M
SOIC150
OT223
CARSEM
SOIC-36
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BCM 4709
Abstract: Ericsson 2116 IC 4822 automaten
Text: ID Nr. ServiceProvider 0004 - card administration SystemIntegrator Location Rosan Finance Sectors Launching Date Application sector 13 and 14 2 01.05.2002 sector 15 1 01.05.2002 1 01.05.2002 card holders Rosan Finance personal data Card ID: ISO No., Rosan Finance
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mdd9754
Abstract: N-P Channel mosfet MDD-9754
Text: MDD9754 Product Flyer MagnaChip Imaging Solutions Division Dual Enhancement N-P Channel Trench MOSFET Key Features N-Channel VDS = 40V ID=16A VGS=10V RDS(ON) <27mΩ @ VGS = 10V <35mΩ @ VGS = 4.5V p-channel VDS = -40V ID=-12.7A(VGS=10V) RDS(ON)
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MDD9754
MDD9754
2008MagnaChip
N-P Channel mosfet
MDD-9754
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Untitled
Abstract: No abstract text available
Text: SKS 1270F B6C 860 V16 Characteristics Symbol Conditions min. typ. max. Unit 1270 A 1001 1502 A 901 1803 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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1270F
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Untitled
Abstract: No abstract text available
Text: SKS 1270F B6C 860 V16 Characteristics Symbol Conditions min. typ. max. Unit 1270 A 1001 1502 A 901 1803 A 1600 V Electrical Data Id Tamb = 35°C no overload 150 % overload, 60s every 10 min. 200 % overload, 60s every 10 min. VCES SEMISTACK Thyristor Three-phase controlled
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1270F
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MDD1754
Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
Text: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V
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MDD1754
MDD1754
MDD1754RH
MagnaChip Semiconductor Ltd. MDD1754
4000P
mosfet low vgs
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PDF
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MDS3754
Abstract: MDS3754RH P-Channel mosfet 40V P-channel Trench MOSFET
Text: P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ General Description Features The MDS3754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = -40V ID = -6.0 @ VGS = -10V
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MDS3754
MDS3754
MDS3754RH
P-Channel mosfet 40V
P-channel Trench MOSFET
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MDD1754
Abstract: mosfet low vgs MagnaChip Semiconductor Ltd. MDD1754
Text: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V
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MDD1754
MDD1754
mosfet low vgs
MagnaChip Semiconductor Ltd. MDD1754
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MDS1754
Abstract: mosfet low vgs
Text: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ General Description Features The MDS1754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability. VDS = 40V ID=7.6A VGS=10V
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MDS1754
MDS1754
mosfet low vgs
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MDS1651
Abstract: No abstract text available
Text: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. VDS = 30V ID = 11.6A@VGS = 10V
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MDS1651
MDS1651
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40V 14A DPAK
Abstract: 40V 60A MOSFET MDD1751 TO-252 N-channel MOSFET
Text: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability VDS = 40V ID = 60A @VGS = 10V
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MDD1751
MDD1751
40V 14A DPAK
40V 60A MOSFET
TO-252 N-channel MOSFET
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MDS5651
Abstract: mds565 60V dual N-Channel trench mosfet mosfet gate source voltage 20v trench mosfet MOSFET N
Text: Dual N-Channel Trench MOSFET 30V, 7.5A, 26mΩ General Description Features The MDS5651 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability VDS = 30V ID = 7.5A @VGS = 10V
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MDS5651
MDS5651
mds565
60V dual N-Channel trench mosfet
mosfet gate source voltage 20v
trench mosfet
MOSFET N
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mosfet 100A
Abstract: 40V, 50A n mosfet
Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability VDS = 40V ID = 50A @VGS = 10V RDS ON
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MDI1752
MDI1752
mosfet 100A
40V, 50A n mosfet
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MDS9754
Abstract: 8v15
Text: Dual Enhancement N-P Channel Trench MOSFET General Description Features N-Channel VDS = 40V ID = 6.1A @ VGS = 10V RDS ON <29mΩ @ VGS = 10V <37mΩ @ VGS = 4.5V The MDS9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in
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MDS9754
MDS9754
8v15
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MDD1653
Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state
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MDD1653
MDD1653
MDD*1653
mdd1653 MOSFET
MDD1653rh
MDD1653RP
MagnaChip Semiconductor Ltd. MDD1653
MagnaChip Semiconductor Ltd. MDD1653 rg
1E52
MDD165
MDD1653R
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MDI1752
Abstract: 40V50A 40V, 50A n mosfet 82269
Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state
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MDI1752
MDI1752
40V50A
40V, 50A n mosfet
82269
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
MMBD2103
ZENER DIODE t2d
MMBD2101
MMBD2102
MMBD2104
SMD codes
bc107 TRANSISTOR SMD CODE PACKAGE SOT23
Transistor NEC 05F
BAT15-115S
NDS358N
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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0342F
Abstract: 82269 MagnaChip Semiconductor
Text: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state
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MDS1656
MDS1656
0342F
82269
MagnaChip Semiconductor
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MDF1752
Abstract: 220F
Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state
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MDF1752
MDF1752
220F
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MDD1751
Abstract: 60V 60A TO-252 N-CHANNEL 40V 60A MOSFET
Text: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 60A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in
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MDD1751
MDD1751
60V 60A TO-252 N-CHANNEL
40V 60A MOSFET
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Untitled
Abstract: No abstract text available
Text: REV ORDER INFORMATION A APP. ECN NO. DATE NEW DESIGN 1803 04 XX 4 X T _ Plating: 2: Selective Gold 4: Selective Gold Glod 30u" No.of contact 15.55 0.2 Type 180* ID CM ID 00:White 01 :Black 02:0ff—White CO 12.04 (COMPONENT SIDE) PCB LAYOUT NO. 1 2 3 4 NAM E
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OCR Scan
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C180304XX4X
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PDF
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2SA1803
Abstract: 2SC4688
Text: TO SH IB A 2SC4688 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 PO W ER AM PLIFIER APPLICATIONS U n it in mm . 15.8 + 0.5 i C om plem entary to 2SA 1803 • Recom m end for 40W H igh F id elity Audio Frequency A m plifier ?S3.6±0.2 - k : -
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OCR Scan
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2SC4688
2SA1803
2-16F1A
961001EAA2'
2SA1803
2SC4688
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PDF
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