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    82269 Search Results

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    82269 Price and Stock

    Apex Tool Group LLC 82269

    PNCH CNTR 1/4X 4-1/4
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    DigiKey 82269 Bulk 1
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    RS 82269 Bulk 1
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    Phoenix Contact 1822697

    TERM BLK 7POS TOP ENT 5.08MM PCB
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    DigiKey 1822697 Bulk 90
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    Mouser Electronics 1822697
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    Master Electronics 1822697
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    Sager 1822697 90
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    Weidmüller Interface GmbH & Co. KG 2822690000

    CIR BRK MAG-HYD 240VAC/80VDC LVR
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    DigiKey 2822690000 Box 7
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    Gedore Torque Ltd KL-1682-2690

    PLASTIC STORAGE CASE
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    DigiKey KL-1682-2690 Bulk 1
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    Belden Inc 82269 8771000

    COAX RG62/U 22AWG
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    DigiKey 82269 8771000 1,000
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    Mouser Electronics 82269 8771000
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    Newark 82269 8771000 SPOOL 1 1
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    RS 82269 8771000 ft. Coil 1
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    82269 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c5578

    Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
    Text: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012


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    PDF MCAT-2003 transistor c5578 BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor

    A2 SHB

    Abstract: AX2200 AW3211 tonyo x1sv AN3200
    Text: Z-Power LED X10490 Technical Data Sheet Acriche Series Binning and Labeling Acriche Features Acriche series is designed for AC source operation and high flux output applications. • Connect directly in AC • Power Saving • Long Life Time Acriche is a semi-permanent and


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    PDF X10490 Johnsun82 contact22 SSC-QP-7-07-24 A2 SHB AX2200 AW3211 tonyo x1sv AN3200

    MDS1754

    Abstract: mosfet low vgs
    Text: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ General Description Features The MDS1754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability. VDS = 40V ID=7.6A VGS=10V


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    PDF MDS1754 MDS1754 mosfet low vgs

    MDS1652

    Abstract: No abstract text available
    Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


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    PDF MDS1652 MDS1652

    0342F

    Abstract: 82269 MagnaChip Semiconductor
    Text: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state


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    PDF MDS1656 MDS1656­ 0342F 82269 MagnaChip Semiconductor

    MDD1754

    Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
    Text: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V


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    PDF MDD1754 MDD1754 MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs

    MOSFET 500V

    Abstract: MDP12N50 133WW n-Channel mosfet 500v
    Text: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description Features The MDP12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.


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    PDF MDP12N50 MOSFET 500V 133WW n-Channel mosfet 500v

    MSI2021

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice 0.4Ω Dual SPDT Analog Switch with Negative Swing Feature General Description Features The MSI2021 is a dual single-pole double-throw dual SPDT analog device aimed for analog signals switching applications in various portable electrical


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    PDF MSI2021 50MHz MSI2021

    MDE9754RH

    Abstract: 0342F mde9754 8000P
    Text: Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDE9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability. Low RDS ON , low gate charge can be offering superior


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    PDF MDE9754 MDE9754­ MDE9754RH 0342F 8000P

    MDF1752

    Abstract: 220F
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state


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    PDF MDF1752 MDF1752­ 220F

    mdd3752

    Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
    Text: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.


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    PDF MDD3752 MDD3752 MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA

    MDS1651

    Abstract: No abstract text available
    Text: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. VDS = 30V ID = 11.6A@VGS = 10V


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    PDF MDS1651 MDS1651

    MDF12N50

    Abstract: 500V MOSFET Power Supply 10T1 mdf12n n-Channel mosfet 400v uc pfc MagnaChip Semiconductor high power diode 500v
    Text: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description Features The MDF12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.


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    PDF MDF12N50 500V MOSFET Power Supply 10T1 mdf12n n-Channel mosfet 400v uc pfc MagnaChip Semiconductor high power diode 500v

    MDC0531E

    Abstract: MDC05
    Text: Dual N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. Low Rds on and low gate charge operation with gate voltage as


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    PDF MDC0531E MDC0531E MDC05

    Untitled

    Abstract: No abstract text available
    Text: Baseband Response Characterization of I-Q Modulators Application Note In modern wideband RF transmitters there are often modulation errors caused by the I-Q modulator section of the system which can significantly degrade the modulation quality. This application note provides a brief theory on the sources


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    PDF 7W-29553-1

    ericsson RBS 2964 series document

    Abstract: COAXIAL CABLE ERICSSON TZC 500 97 RBS 6201 ericsson ERICSSON TZC 500 97 Ericsson Installation guide for RBS 2116 Ericsson rbs 2964 manual ERICSSON rbs 2409 Ericsson Installation guide for RBS 6201 ERICSSON rbs 3101 ERICSSON tzc 500 32
    Text: 1 Contents RF Interconnect Products Introduction . 2 Trompeter Quality ISO 9001 Registration . 3 Warranty Information . 3


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    PDF Mil-Std-1553B MIL-C-49142 PL375 PL375C PL380 PL455AC PL803 PL3155 PL3155AC ericsson RBS 2964 series document COAXIAL CABLE ERICSSON TZC 500 97 RBS 6201 ericsson ERICSSON TZC 500 97 Ericsson Installation guide for RBS 2116 Ericsson rbs 2964 manual ERICSSON rbs 2409 Ericsson Installation guide for RBS 6201 ERICSSON rbs 3101 ERICSSON tzc 500 32

    7000k

    Abstract: No abstract text available
    Text: Z-Power LED X10490 Technical Data Sheet Acriche Series Binning and Labeling Acriche Features • Connect directly in AC Acriche series is designed for AC source • Power Saving operation and high flux output applications. • Long Life Time Acriche is a semi-permanent and


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    PDF X10490 Johnsun82 SSC-QP-7-07-24 7000k

    MDF5N50

    Abstract: mosfet 500V 50A MDF5N mosfet MDF5N50 500V 50A mosfet 500v MagnaChip Semiconductor 250fA 6903 N-channel 500V mosfet "Power Diode" 500V 50A
    Text: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description Features The MDF5N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.


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    PDF MDF5N50 mosfet 500V 50A MDF5N mosfet MDF5N50 500V 50A mosfet 500v MagnaChip Semiconductor 250fA 6903 N-channel 500V mosfet "Power Diode" 500V 50A

    MDE1752

    Abstract: MDE1752RH
    Text: N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description Features VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability


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    PDF MDE1752 MDE1752­ MDE1752RH

    MDD1752

    Abstract: MDD1752RH MDD*1752 40V 14A DPAK n-channel mosfet vgs 3v MAGNACHIP Z 8.0m 40V50A trench mosfet 40V, 50A n mosfet
    Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability


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    PDF MDD1752 MDD1752­ MDD1752RH MDD*1752 40V 14A DPAK n-channel mosfet vgs 3v MAGNACHIP Z 8.0m 40V50A trench mosfet 40V, 50A n mosfet

    MOSFET 719

    Abstract: mdd1655 MDD165
    Text: 30V N-channel Trench MOSFET : 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1655 is suitable device for PWM, Load Switching and


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    PDF MDD1655 MDD1655 MOSFET 719 MDD165

    MDS1652

    Abstract: Diode 4003 MagnaChip Semiconductor 82269
    Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ General Description Features The MDS1652 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS ON , low gate charge and operation for


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    PDF MDS1652 MDS1652 Diode 4003 MagnaChip Semiconductor 82269

    Untitled

    Abstract: No abstract text available
    Text: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith


    OCR Scan
    PDF A235bOS -33-5S S07HOLD fl235b05 00312b! T-52-33-55 82289-P Q67020-Y77 82289-6-P Q67120-Y111

    SAB 82258

    Abstract: dv3c Dwo1 pin diagram priority encoder 74146 82258 DV12C FSV 052 interfacing 8289 with 8086 8283A DX14C
    Text: SAB 82220 Bus Interface Controller BIC • H ighly integrated m icroprocessor system support com ponent • Six modes o f operation fo r flexible adaption to different applications • Integrates into one package m icroprocessor interface logic, like bus drivers, bus control


    OCR Scan
    PDF 16-bit 82220-N 67120-Y139 SAB 82258 dv3c Dwo1 pin diagram priority encoder 74146 82258 DV12C FSV 052 interfacing 8289 with 8086 8283A DX14C