Untitled
Abstract: No abstract text available
Text: D • A235bOS DDBlEEfl 1 M S I E G XX, , SIEMENS AKTIEN GE SEL LSCHAF T-52.-33-5S SAB 82289 Bus Arbiter for SAB 80286 Processors SAB 82289-6 up to 12 MHz SAB 82289 up to 16 MHz • S upports m u ltim aster system bus arbitration protocol • Synchronizes SAB 80286 processor w ith
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A235bOS
-33-5S
S07HOLD
fl235b05
00312b!
T-52-33-55
82289-P
Q67020-Y77
82289-6-P
Q67120-Y111
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transistor c5578
Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor
Text: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: info@belden.com Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012
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MCAT-2003
transistor c5578
BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6
awm style 20233
7700A transformer
Belden 138777
awm 2464 vw-1 300v shield cable specification
transistor nec 8772
yokogawa DCS
finder type 81.11
C5611 Transistor
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A2 SHB
Abstract: AX2200 AW3211 tonyo x1sv AN3200
Text: Z-Power LED X10490 Technical Data Sheet Acriche Series Binning and Labeling Acriche Features Acriche series is designed for AC source operation and high flux output applications. • Connect directly in AC • Power Saving • Long Life Time Acriche is a semi-permanent and
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X10490
Johnsun82
contact22
SSC-QP-7-07-24
A2 SHB
AX2200
AW3211
tonyo
x1sv
AN3200
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SAB 82258
Abstract: dv3c Dwo1 pin diagram priority encoder 74146 82258 DV12C FSV 052 interfacing 8289 with 8086 8283A DX14C
Text: SAB 82220 Bus Interface Controller BIC • H ighly integrated m icroprocessor system support com ponent • Six modes o f operation fo r flexible adaption to different applications • Integrates into one package m icroprocessor interface logic, like bus drivers, bus control
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16-bit
82220-N
67120-Y139
SAB 82258
dv3c
Dwo1
pin diagram priority encoder 74146
82258
DV12C
FSV 052
interfacing 8289 with 8086
8283A
DX14C
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MDS1754
Abstract: mosfet low vgs
Text: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ General Description Features The MDS1754 uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability. VDS = 40V ID=7.6A VGS=10V
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MDS1754
MDS1754
mosfet low vgs
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MDS1652
Abstract: No abstract text available
Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching
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MDS1652
MDS1652
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0342F
Abstract: 82269 MagnaChip Semiconductor
Text: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state
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MDS1656
MDS1656
0342F
82269
MagnaChip Semiconductor
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MDD1754
Abstract: MDD1754RH MagnaChip Semiconductor Ltd. MDD1754 4000P mosfet low vgs
Text: N-Channel Trench MOSFET, 40V, 20.5A, 27mΩ General Description Features The MDD1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. VDS = 40V ID=20.5A VGS=10V
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MDD1754
MDD1754
MDD1754RH
MagnaChip Semiconductor Ltd. MDD1754
4000P
mosfet low vgs
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MOSFET 500V
Abstract: MDP12N50 133WW n-Channel mosfet 500v
Text: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 11.5 A, 0.65Ω General Description Features The MDP12N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
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MDP12N50
MOSFET 500V
133WW
n-Channel mosfet 500v
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MSI2021
Abstract: No abstract text available
Text: Preliminary – Subject to change without notice 0.4Ω Dual SPDT Analog Switch with Negative Swing Feature General Description Features The MSI2021 is a dual single-pole double-throw dual SPDT analog device aimed for analog signals switching applications in various portable electrical
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MSI2021
50MHz
MSI2021
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MDE9754RH
Abstract: 0342F mde9754 8000P
Text: Dual Enhancement N-P Channel Trench MOSFET General Description Features The MDE9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability. Low RDS ON , low gate charge can be offering superior
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MDE9754
MDE9754
MDE9754RH
0342F
8000P
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MDF1752
Abstract: 220F
Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state
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MDF1752
MDF1752
220F
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mdd3752
Abstract: MDD3752RH P-channel Trench MOSFET MDD*3752 MDD375 MagnaChip Semiconductor mosfet 441 Pchannel mosfet p-channel 10A 3ROA
Text: P-Channel Trench MOSFET, -40V, -43A, 17mΩ Features General Description VDS = -40V ID = -43A @VGS = -10V RDS ON < 17mΩ @ VGS = -10V < 25mΩ @ VGS = -4.5V The MDD3752 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.
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MDD3752
MDD3752
MDD3752RH
P-channel Trench MOSFET
MDD*3752
MDD375
MagnaChip Semiconductor
mosfet 441
Pchannel
mosfet p-channel 10A
3ROA
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MDS1651
Abstract: No abstract text available
Text: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. VDS = 30V ID = 11.6A@VGS = 10V
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MDC0531E
Abstract: MDC05
Text: Dual N-Channel Trench MOSFET 30V, 8.0 A, 20mΩ General Description Features The MDC0531E uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. Low Rds on and low gate charge operation with gate voltage as
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MDC0531E
MDC0531E
MDC05
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MDS1754
Abstract: trench mosfet mosfet low vgs
Text: N-Channel Trench MOSFET, 40V, 7.6A, 29mΩ Features General Description VDS = 40V ID = 7.6 VGS = 10V RDS(ON) < 29mΩ @VGS = 10V < 37mΩ @ VGS = 4.5V The MDS1754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in on-state resistance, switching performance and reliability.
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MDS1754
MDS1754
trench mosfet
mosfet low vgs
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Untitled
Abstract: No abstract text available
Text: Baseband Response Characterization of I-Q Modulators Application Note In modern wideband RF transmitters there are often modulation errors caused by the I-Q modulator section of the system which can significantly degrade the modulation quality. This application note provides a brief theory on the sources
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7W-29553-1
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ericsson RBS 2964 series document
Abstract: COAXIAL CABLE ERICSSON TZC 500 97 RBS 6201 ericsson ERICSSON TZC 500 97 Ericsson Installation guide for RBS 2116 Ericsson rbs 2964 manual ERICSSON rbs 2409 Ericsson Installation guide for RBS 6201 ERICSSON rbs 3101 ERICSSON tzc 500 32
Text: 1 Contents RF Interconnect Products Introduction . 2 Trompeter Quality ISO 9001 Registration . 3 Warranty Information . 3
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Mil-Std-1553B
MIL-C-49142
PL375
PL375C
PL380
PL455AC
PL803
PL3155
PL3155AC
ericsson RBS 2964 series document
COAXIAL CABLE ERICSSON TZC 500 97
RBS 6201 ericsson
ERICSSON TZC 500 97
Ericsson Installation guide for RBS 2116
Ericsson rbs 2964 manual
ERICSSON rbs 2409
Ericsson Installation guide for RBS 6201
ERICSSON rbs 3101
ERICSSON tzc 500 32
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7000k
Abstract: No abstract text available
Text: Z-Power LED X10490 Technical Data Sheet Acriche Series Binning and Labeling Acriche Features • Connect directly in AC Acriche series is designed for AC source • Power Saving operation and high flux output applications. • Long Life Time Acriche is a semi-permanent and
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X10490
Johnsun82
SSC-QP-7-07-24
7000k
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MDF5N50
Abstract: mosfet 500V 50A MDF5N mosfet MDF5N50 500V 50A mosfet 500v MagnaChip Semiconductor 250fA 6903 N-channel 500V mosfet "Power Diode" 500V 50A
Text: Preliminary – Subject to change without notice N-Channel MOSFET 500V, 5.0 A, 1.4Ω General Description Features The MDF5N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
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MDF5N50
mosfet 500V 50A
MDF5N
mosfet MDF5N50 500V 50A
mosfet 500v
MagnaChip Semiconductor
250fA
6903
N-channel 500V mosfet
"Power Diode" 500V 50A
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MDE1752
Abstract: MDE1752RH
Text: N-Channel Trench MOSFET 40V, 66A, 8.0mΩ General Description Features VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDE1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability
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MDE1752RH
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MDD1752
Abstract: MDD1752RH MDD*1752 40V 14A DPAK n-channel mosfet vgs 3v MAGNACHIP Z 8.0m 40V50A trench mosfet 40V, 50A n mosfet
Text: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability
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MDD1752
MDD1752
MDD1752RH
MDD*1752
40V 14A DPAK
n-channel mosfet vgs 3v
MAGNACHIP
Z 8.0m
40V50A
trench mosfet
40V, 50A n mosfet
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MOSFET 719
Abstract: mdd1655 MDD165
Text: 30V N-channel Trench MOSFET : 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1655 is suitable device for PWM, Load Switching and
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MDD1655
MDD1655
MOSFET 719
MDD165
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MDS1652
Abstract: Diode 4003 MagnaChip Semiconductor 82269
Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ General Description Features The MDS1652 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS ON , low gate charge and operation for
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MDS1652
MDS1652
Diode 4003
MagnaChip Semiconductor
82269
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