Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MDS1651 Search Results

    MDS1651 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MDS1651

    Abstract: No abstract text available
    Text: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. VDS = 30V ID = 11.6A@VGS = 10V


    Original     		MDS1651 MDS1651 PDF

    MDS1651

    Abstract: No abstract text available
    Text: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. MDS1651 is suitable device for PWM, Load


    Original     		MDS1651 MDS1651 PDF

    trench mosfet

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice N-Channel Trench MOSFET 30V, 11.2A, 14.5mΩ Ω General Description Features The MDS1651S uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability with integrated


    Original     		MDS1651S MDS1651S trench mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 30V, 11.6A, 14mΩ Ω General Description Features The MDS1651 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance


    Original     		MDS1651 MDS1651 PDF

    MDS1652

    Abstract: No abstract text available
    Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


    Original     		MDS1652 MDS1652 PDF

    MDS1652

    Abstract: Diode 4003 MagnaChip Semiconductor 82269
    Text: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ General Description Features The MDS1652 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS ON , low gate charge and operation for


    Original     		MDS1652 MDS1652 Diode 4003 MagnaChip Semiconductor 82269 PDF