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    ICTE18 Price and Stock

    Rochester Electronics LLC ICTE-18RL4G

    TVS DIODE 18VWM 30VC AXIAL
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    onsemi ICTE-18RL4G

    TVS DIODE 18VWM 30VC AXIAL
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    Rochester Electronics ICTE-18RL4G 5,330 1
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    Vishay Semiconductors ICTE18-E3-54

    TVS DIODE 18VWM 25.2VC 1.5KE
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    Vishay Semiconductors ICTE18HE3-51

    TVS DIODE 18VWM 25.2VC 1.5KE
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    Vishay Semiconductors ICTE18-E3-73

    TVS DIODE 18VWM 25.2VC 1.5KE
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    ICTE18 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ICTE-18 MDE Semiconductor 18.00V 50A 1500W peak pulse power glass passivated junction transient voltage suppressor Original PDF
    ICTE-18 On Semiconductor 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors Original PDF
    ICTE18 Vishay TRANSZORB Transient Voltage Suppressors, Peak Pulse Power 1500W Original PDF
    ICTE-18 Microsemi Transient Absorption Zener Scan PDF
    ICTE-18 Motorola Switchmode Datasheet Scan PDF
    ICTE-18 Motorola European Master Selection Guide 1986 Scan PDF
    ICTE18 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ICTE18 National Semiconductor Transient voltage suppression diode for microprocessor protection, 18V Scan PDF
    ICTE-18 National Semiconductor TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION Scan PDF
    ICTE18 STMicroelectronics UNI-AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PORTECTION UNI- ET BIDIRECTIONNELLES Scan PDF
    ICTE18 Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF
    ICTE-18C MDE Semiconductor 18.00V 50A 1500W peak pulse power glass passivated junction transient voltage suppressor Original PDF
    ICTE18C Vishay TRANSZORB Transient Voltage Suppressors, Peak Pulse Power 1500W Original PDF
    ICTE-18C Microsemi Transient Absorption Zener Scan PDF
    ICTE18C National Semiconductor Transient voltage suppression diode for microprocessor protection, 18V Scan PDF
    ICTE-18C National Semiconductor TRANSIENT VOLTAGE SUPPRESSORS FOR MICROPROCESSOR PROTECTION Scan PDF
    ICTE18C STMicroelectronics UNI-AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DE PORTECTION UNI- ET BIDIRECTIONNELLES Scan PDF
    ICTE18C Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF
    ICTE18C-E3/54 Vishay General Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC AXIAL Original PDF
    ICTE18C-E3/73 Vishay General Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC AXIAL Original PDF

    ICTE18 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. PDF

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction


    Original     		ICTE18C 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    88356

    Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty


    Original     		ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002 PDF

    1N6373

    Abstract: 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B 1N637 ICTE18
    Text: ICTE5.0 thru ICTE18C Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		ICTE18C 2002/95/EC 2002/96/EC 08-Apr-05 1N6373 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B 1N637 ICTE18 PDF

    28 volt transzorb

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)


    Original     		ICTE18C, 1N6373 1N6378 1N6382 1N6386 265OC/10 08-Apr-05 28 volt transzorb PDF

    1N6373

    Abstract: 1N6374 1N6386 ICTE18C J-STD-002
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 150lectual 18-Jul-08 1N6374 1N6386 ICTE18C J-STD-002 PDF

    88356

    Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty


    Original     		ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002 PDF

    1N6373

    Abstract: 1N6374 1N6386 ICTE18C J-STD-002
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 1N6374 1N6386 ICTE18C J-STD-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a


    Original     		ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    1N6373

    Abstract: 88356 1N6382 1N6378 1N6386 ICTE18C
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)


    Original     		ICTE18C, 1N6373 1N6378 1N6382 1N6386 23-May-03 88356 1N6378 1N6386 ICTE18C PDF

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    1N6373

    Abstract: 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B
    Text: ICTE5.0 thru ICTE18C Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		ICTE18C 2002/95/EC 2002/96/EC 08-Apr-05 1N6373 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG PDF

    1N623

    Abstract: 1N6377 1N6281A 1N6284 1N6269A MPTE-15 1N6267 1N6267A 1N6273 1N6383
    Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com JEDEC AND INDUSTRY STANDARD DEVICES MANUFACTURED JEDEC JEDEC


    Original     		1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6269A 1N6270 1N6270A 1N6271 1N6271A 1N623 1N6377 1N6281A 1N6284 1N6269A MPTE-15 1N6267 1N6267A 1N6273 1N6383 PDF

    1N6377

    Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
    Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389


    Original     		ICTE15C MPTE-45 1N6373 1N6381 1N6382 1N6389 ICTE-10C ICTE-12C ICTE-15C ICTE-18C 1N6377 1N6385 1N6389 MPTE-45 ICTE-12 equivalent MPTE-15 PDF

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801 PDF

    diode 9146

    Abstract: diode icte 36 diode icte 18 MPTE-45 MPTE-45C ICTE
    Text: Silicon Avalanche Diodes 1500 Watt Axial Leaded Transient Voltage Suppressors ICTE/MPTE Series The ICTE/MPTE series 1500 W transient suppressors are designed specifically for protection of CMOS, NMOS, BiMOS, and other integrated circuits available today for TTL, DTL, ECL, RTL, and


    Original     		ICTE-10/MPTE-10 ICTE-12/MPTE-12 ICTE-15/MPTE-15 ICTE-18/MPTE-18* ICTE-22/MPTE-22 diode 9146 diode icte 36 diode icte 18 MPTE-45 MPTE-45C ICTE PDF

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp PDF

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp PDF

    diodo zener 3.6c

    Abstract: 1Z 26 ICTE-10 ICTE-12 ICTE-15 ICTE-18 ICTE-22 ICTE-45 ICTE-45C DIODO
    Text: M icroisem i Corp. SCOTTSDALE , AZ F o r m o re in fo r m a tio n call: 602 941-6300 ICTE-5 thru ICTE-45C FEATURES • DESIGNED TO PR O TE C T BIPO LAR. M O S. AND S C H O T T K Y IM PR O V ED INTEGRATED C IR C U ITS FRO M ELE C T R IC A L D ISTU R B AN C ES.


    OCR Scan     		ICTE-45C 1000/xs 10-12seconds diodo zener 3.6c 1Z 26 ICTE-10 ICTE-12 ICTE-15 ICTE-18 ICTE-22 ICTE-45 ICTE-45C DIODO PDF

    Untitled

    Abstract: No abstract text available
    Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s I CTE» 5 r/es CTE-45C OYOQM Control over power h m sib ia Protection FEATURES When no problems exist, Oydorn TVS • Qass passivated junction Diodes are totally invisible to the circuits • Stand-off voltage range: 5-45 V


    OCR Scan     		CTE-45C 10X1000 1-619-71S7280 500pcs) 1000pcs) PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF