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    88356 Price and Stock

    Anatech Electronics Inc AE8835.60B11376

    RF FILTER BANDPASS 8.8356GHZ MOD
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    DigiKey AE8835.60B11376 Box 100 1
    • 1 $530.7
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    IndustrialSupplies.com 1883564

    SLIM JIM PLASTIC STEP ON CONTAIN
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    DigiKey 1883564 Box 3 1
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    IndustrialSupplies.com 1883566

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    DigiKey 1883566 Box 2 1
    • 1 $267.75
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    IndustrialSupplies.com 1883568

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    DigiKey 1883568 Box 1 1
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    WAGO Innovative Connections 788-356

    RELAY GEN PURPOSE 16A 24V
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    DigiKey 788-356 Box 1
    • 1 $37.41
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    88356 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC.

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction


    Original     		PDF ICTE18C 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801

    88356

    Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002

    1N6373

    Abstract: 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B 1N637 ICTE18
    Text: ICTE5.0 thru ICTE18C Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		PDF ICTE18C 2002/95/EC 2002/96/EC 08-Apr-05 1N6373 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B 1N637 ICTE18

    28 volt transzorb

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)


    Original     		PDF ICTE18C, 1N6373 1N6378 1N6382 1N6386 265OC/10 08-Apr-05 28 volt transzorb

    1N6373

    Abstract: 1N6374 1N6386 ICTE18C J-STD-002
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 150lectual 18-Jul-08 1N6374 1N6386 ICTE18C J-STD-002

    88356

    Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002

    1N6373

    Abstract: 1N6374 1N6386 ICTE18C J-STD-002
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 1N6374 1N6386 ICTE18C J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 11 4C6C!"#$%9C 9E792D364538C&&9A29 69E73D9'C6DC39!7C39 69 2' 4C6C!"#$%9EC  ' '( *6+6,%'


    Original     		PDF 23456784539A6BCDEF 345674F 976BCDEF 92D3645 D3645 ECFC24 ECFC26 26B6F36 26B6F36C7 9C636A

    Untitled

    Abstract: No abstract text available
    Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 11 4C6C!"#$%&9C 9E792D364538C''9A29 69E73D9 C6DC39!7C39 69 D388A299*2( 4C6C!"#$%&9EC  (


    Original     		PDF 23456784539A6BCDEF 345674F 976BCDEF 92D3645 D3645 ECFC24 ECFC26 26B6F36 26B6F36C7 9C636A

    C5362

    Abstract: No abstract text available
    Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 11 4C6C!"#$%&9C 9E792D364538C''9A29 69E73D9 C6DC39!7C39 69 D388A299*2( 4C6C!"#$%&9EC  (


    Original     		PDF 23456784539A6BCDEF 345674F 976BCDEF 92D3645 D3645 ECFC24 ECFC26 26B6F36 26B6F36C7 9C636A C5362

    Untitled

    Abstract: No abstract text available
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08

    1N6373

    Abstract: 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B
    Text: ICTE5.0 thru ICTE18C Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in Unidirectional and Bidirectional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		PDF ICTE18C 2002/95/EC 2002/96/EC 08-Apr-05 1N6373 1N6374 ICTE18C ICTE-18C JESD22-B102D J-STD-002B

    l6544

    Abstract: No abstract text available
    Text: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 C!"3 A2EC!"38 1 F8#$%&'9 &  & 1 ' *6+6'


    Original     		PDF 23456784539A6BCDEF 345674F 976BCDEF 92D3645 592D3645 D36934 D3653 8EFE97FA D871F 9D89FDAFC7A$ l6544

    diode 1n6376 data sheet

    Abstract: 1N6377 88356 1N6382 3 Volt transzorb ICTE ICTE-15 Transient Voltage Suppressors transzorb symbol 1N6373
    Text: ICTE5.0 thru ICTE15C, 1N6373 thru 1N6377 & 1N6382 thru 1N6385 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Stand Off Voltage 5.0 to 15V Peak Pulse Power 1500W Case Style 1.5KE 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)


    Original     		PDF ICTE15C, 1N6373 1N6377 1N6382 1N6385 265OC/10 03-May-02 diode 1n6376 data sheet 1N6377 88356 3 Volt transzorb ICTE ICTE-15 Transient Voltage Suppressors transzorb symbol