Untitled
Abstract: No abstract text available
Text: IRF7807VPbF-1 HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) V 25 mΩ 9.5 nC 8.3 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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Original
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IRF7807VPbF-1
IRF7807VTRPbF-1
TD-020D
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF8910PbF-1 HEXFET Power MOSFET VDS 20 RDS on max V 13.4 (@VGS = 10V) mΩ RDS(on) max 18.3 (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 7.4 nC 10 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package
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Original
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IRF8910PbF-1
TD-020D
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PDF
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motor driver ic 7324
Abstract: UCCx7324 parallel mosfet UCC27324 UCCx7325 UCC37324 SLUP133 UCCx7323 15-V UCC27323
Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492A – DECEMBER 2001 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D D D D D D Miller Plateau Region
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Original
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UCC27323,
UCC27324,
UCC27325
UCC37323,
UCC37324,
UCC37325
SLUS492A
20-ns
15-ns
motor driver ic 7324
UCCx7324
parallel mosfet
UCC27324
UCCx7325
UCC37324
SLUP133
UCCx7323
15-V
UCC27323
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF8113PbF-1 HEXFET Power MOSFET VDS 30 RDS on max V 5.6 (@VGS = 10V) mΩ RDS(on) max 6.8 (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 24 nC 17.2 A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package
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Original
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IRF8113PbF-1
IRF8113pper
TD-020D
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PDF
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SLUS492B
Abstract: UCC27323D UCC27324 UCC27325 UCC37323 UCC37324 UCC37325 UCC27323 15-V POWER MOSFET
Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B – JUNE 2001 – REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D
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Original
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UCC27323,
UCC27324,
UCC27325
UCC37323,
UCC37324,
UCC37325
SLUS492B
20-ns
15-ns
SLUS492B
UCC27323D
UCC27324
UCC27325
UCC37323
UCC37324
UCC37325
UCC27323
15-V
POWER MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF7205PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) -30 V 0.07 Ω 0.13 Ω 27 nC -4.6 A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package
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Original
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IRF7205PbF-1
D-020D
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF7103PbF-1 HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 50 V 0.13 Ω 0.20 Ω 12 nC 3.0 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package
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Original
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IRF7103PbF-1
TD-020D
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PDF
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15-V
Abstract: UCC27323 UCC27323D UCC27324 UCC27325 UCC37323 UCC37324 UCC37325 UCC37324 equivalent POWER MOSFET
Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D
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Original
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UCC27323,
UCC27324,
UCC27325
UCC37323,
UCC37324,
UCC37325
SLUS492B
20-ns
15-ns
15-V
UCC27323
UCC27323D
UCC27324
UCC27325
UCC37323
UCC37324
UCC37325
UCC37324 equivalent
POWER MOSFET
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF7809AVPbF-1 HEXFET Power MOSFET DEVICE CHARACTERISTICS
IRF7809AV RDS on 7.0mΩ QG 41nC Qsw 14nC Qoss 30nC 1 8 S 2 7 D S 3 6 D G 4 5 D Top View SO-8 Features A A D S Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques
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Original
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IRF7809AVPbF-1
IRF7809AV
IRF7809AVTRPbF-1
D-020D
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PDF
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Untitled
Abstract: No abstract text available
Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D
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Original
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UCC27323,
UCC27324,
UCC27325
UCC37323,
UCC37324,
UCC37325
SLUS492B
20-ns
15-ns
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PDF
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Untitled
Abstract: No abstract text available
Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D
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Original
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UCC27323,
UCC27324,
UCC27325
UCC37323,
UCC37324,
UCC37325
SLUS492B
20-ns
15-ns
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PDF
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TEXAS INSTRUMENT N PACKAGE DIMENSION
Abstract: No abstract text available
Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B – JUNE 2001 – REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D
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Original
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UCC27323,
UCC27324,
UCC27325
UCC37323,
UCC37324,
UCC37325
SLUS492B
20-ns
15-ns
TEXAS INSTRUMENT N PACKAGE DIMENSION
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PDF
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UCCx7323
Abstract: No abstract text available
Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D
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Original
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UCC27323,
UCC27324,
UCC27325
UCC37323,
UCC37324,
UCC37325
SLUS492B
20-ns
15-ns
UCCx7323
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PDF
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UCC27324
Abstract: No abstract text available
Text: UCC27323, UCC27324, UCC27325 UCC37323, UCC37324, UCC37325 SLUS492B − JUNE 2001 − REVISED SEPTEMBER 2002 DUAL 4ĆA PEAK HIGH SPEED LOW-SIDE POWER MOSFET DRIVERS FEATURES D Industry-Standard Pin-Out D High Current Drive Capability of ±4 A at the D D D D
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Original
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UCC27323,
UCC27324,
UCC27325
UCC37323,
UCC37324,
UCC37325
SLUS492B
20-ns
15-ns
UCC27324
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PDF
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M3481
Abstract: TSM3481CX6
Text: E TAIWAN TSM3481 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source S54 R Ds(on)(m Q ) b (A) 48 @ VCS = -10V -5.3 79 @ VGS = -4.5V -4.1 V DS (V )
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OCR Scan
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M3481
OT-26
TSM3481CX6
OT-26
M3481
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PDF
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TSM3460CX6
Abstract: 4300 MOSFET s54 mo TSM3460
Text: E TAIWAN TSM3460 S E M IC O N D U C T O R 20V N-Channel MOSFET w/ESD Protected pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate V DS (V) 4. Source 20 1 23 Features R osanna) Id ( A ) 22 @ Vos = 4 .5 V 6 40 @ V g* = 2.5V
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OCR Scan
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TSM3460
OT-26
TSM3460CX6
OT-26
4300 MOSFET
s54 mo
TSM3460
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PDF
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55n03
Abstract: marking 1AJ MOSFET 55N03 TSM55N03
Text: s TAIWAN TSM55N03 S E M IC O N D U C T O R 25V N-Channel MOSFET pb RoHS C O M P L IA N C E TO-252 PRODUCT SUM M ARY Pin Definition: 1. Gate V o s (V ) 2. Drain 3. Source /Ù 7 f T O %T x, 25 R os^m O ) I d (A ) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2~3
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OCR Scan
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TSM55N03
O-252
TSM55NÃ
O-252
55n03
marking 1AJ
MOSFET 55N03
TSM55N03
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PDF
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TSM4410
Abstract: TSM4410CS D0351
Text: s TAIWAN TSM4410 S E M IC O N D U C T O R 25V N-Channei MOSFET pb RoHS CO M PLIANCE SOP-8 PRODUCT SUM M AR Y Pin Definition; 1. S ou rce 2. S ou rce 3. S ou rce V DS (V) 4. Gate R o s ic a m o ) Id (A) 1 5 V c s = 10V 10 21 @ V {^ = 4 . 5 V 8 25 5. 6, 7, 8. Drain
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OCR Scan
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TSM4410
TSM4410CS
TSM4410
D0351
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PDF
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mosfet low vgs
Abstract: I1020
Text: v G en eral S e m ic o n d u c t o r # _ GF6968E Battery Switch, ESD Protected Common-Drain Dual N-Channel MOSFET Low VGS th Vds 20V RdS(ON) 22mQ Id6.5A DO Pin 1 = 0 Pin 2 = Si Pin 3 = Si Pin 4 = Gì Pin 5 = G 2 Pin 6 = S2 Pin 7 = S2 Pin 8 = D
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OCR Scan
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GF6968E
MIL-STD-750,
mosfet low vgs
I1020
|
PDF
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MOSFET 4466
Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES
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OCR Scan
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BF1102
OT363
BF1102
MOSFET 4466
4466 8 pin mosfet pin voltage
4466 mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6436DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) r DS(on) (£2) 30 0.045 @ VGs = 10 V 0.070 @ VGS = 4.5 V I d (A) ±4.4 ±3.5 TSSOP-8 Dd S [T sd G IT • SÌ6436DQ ~H D T ]S TI S T ]d O- G JE * Source Pins 2, 3, 6 and 7
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OCR Scan
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6436DQ
S-49534--Rev.
6-Oct-97
ct-97
|
PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6426DQ Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) rDS(on) (Q) 0.035 @ VGs = 4.5 V 0.04 @ VGS = 2.5 V 20 I d (A) ±5.4 ±4.9 D Q TSSOP-8 Ò s* *Source Pins 2, 3. 6, and 7 must be tied common. TSSOP-8 Top View N-Channel MOSFET
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OCR Scan
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6426DQ
S-49534--Rev.
Q6-Oct-97
-Oct-97
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PDF
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TSM3433
Abstract: MARKING ato
Text: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V
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OCR Scan
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TSM3433
TSM3433CX6
OT-26
TSM3433
MARKING ato
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PDF
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tsc 3001
Abstract: RF power mosfet marking K5 SOT-26 ci TSM3457 K5 marking code diode single P-Channel mosfet sot-26 marking AAW
Text: $ TAIW AN TSM3457 S E M IC O N D U C T O R 30V P-Channei MOSFET pb RoHS CO M PLIANCE S O T-26 854 PRODUCT SUMMARY Pin D efinition: 1. Drain 6. Drain 2. D rain 5. Drain 3. Gate 4. Source Vos (V) R DS( c n ) ( m ü ) b (A) 60 @ v {;s= 10V -5 100 @ V GS= 4.5V
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OCR Scan
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TSM3457
OT-26
TSM3457CX6
tsc 3001
RF power mosfet marking K5
SOT-26 ci
TSM3457
K5 marking code diode
single P-Channel mosfet sot-26
marking AAW
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PDF
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