TSM3433
Abstract: No abstract text available
Text: TSM3433 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 42 @ VGS = -4.5V -5.6 57 @ VGS = -2.5V -4.8 80 @ VGS = -1.8V -1.4 Block Diagram ● Advance Trench Process Technology
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TSM3433
OT-26
TSM3433CX6
TSM3433
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Untitled
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET b RoHS C O M P L IA N C E PRODUCT SUM M ARY SOT-26 V DS V) P in D e fin itio n : 654 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features R D S(on)<m Û) Id (A) 42 @ V gs = -4.5V -5.6
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TSM3433
OT-26
TSM3433CX6
OT-26
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TSM3433
Abstract: MARKING ato
Text: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V
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OCR Scan
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PDF
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TSM3433
TSM3433CX6
OT-26
TSM3433
MARKING ato
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Untitled
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET bl COMPLIANCE RoHS PRODUCT SUM M ARY SOT-26 V DS V P in D e fin itio n : 65 4 1. Drain 2. Drain 3. G ate 6. Drain 5, Drain 4 . Source -20 1 23 Features RDS(on)<mÛ) b (A) 42 @ Vgs = -4.5V -5.6 57 @ VCS= -2.5V
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OCR Scan
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PDF
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TSM3433
OT-26
TSM3433CX6
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