55N03L
Abstract: 55n03
Text: S DP /B 55N03L May,2004 ver1.1 S amHop Microelectronics C orp. N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 14 @ V G S = 10V
|
Original
|
PDF
|
55N03L
O-220
O-263
55N03L
55n03
|
55n03
Abstract: 55N03L
Text: S DP /B 55N03L S eptember , 2002 S amHop Microelectronics C orp. N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) TYP High power and current handling capability. 12.5 @ V G S = 10V
|
Original
|
PDF
|
55N03L
O-220
O-263
55n03
55N03L
|
55N03L
Abstract: 55N03
Text: 55N03L S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) TYP High power and current handling capability. 12.5 @ V G S = 10V 30V S uper high dense cell design for extremely low R DS (ON).
|
Original
|
PDF
|
55N03L
O-220
O-263
55N03L
55N03
|
NEC TRANSISTOR MARKING CODE
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 55N03SUG SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 55N03SUG is N-channel MOS Field Effect PART NUMBER LEAD PLATING T.B.D. Pure Sn Tin PACKING PACKAGE Tape TO-252(MP-3ZK)
|
Original
|
PDF
|
NP55N03SUG
NP55N03SUG
O-252
O-252)
NEC TRANSISTOR MARKING CODE
|
55N03
Abstract: NP55N03SUG NP55N03SUG-E1-AY MOS FIELD EFFECT TRANSISTOR
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 55N03SUG-E1-AY Note
|
Original
|
PDF
|
NP55N03SUG
NP55N03SUG
NP55N03SUG-E1-AY
NP55N03SUG-E2-AY
O-252
O-252)
55N03
NP55N03SUG-E1-AY
MOS FIELD EFFECT TRANSISTOR
|
Untitled
Abstract: No abstract text available
Text: 55N03 55A, 25V, RDS ON 6mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The 55N03 provide the designer with the best combination of fast switching,ruggedized device design,
|
Original
|
PDF
|
SSD55N03
O-252
SID55N03
O-252
55N03
16-Jun-2011
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
55N03
Abstract: NP55N03SUG
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
npn transistor bc148 datasheet
Abstract: pin configuration NPN transistor BC147 BC148 pin configuration BC157 DATA SHEET npn transistor smd w19 pin configuration NPN transistor BC148 DATASHEET OF TRANSISTOR BC158 TRANSISTOR BC135 TRANSISTOR BC147 jog image bc159 npn switching transistor
Text: R Intel 810E2 Chipset Platform Design Guide January 2001 Document Number: 298248-001 ® Intel 810E2 Chipset Platform R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual
|
Original
|
PDF
|
810E2
npn transistor bc148 datasheet
pin configuration NPN transistor BC147
BC148 pin configuration
BC157 DATA SHEET
npn transistor smd w19
pin configuration NPN transistor BC148
DATASHEET OF TRANSISTOR BC158
TRANSISTOR BC135
TRANSISTOR BC147 jog image
bc159 npn switching transistor
|
55n03
Abstract: MOSFET 55N03 ir 55n03 MTN55N03J3 DSA006750
Text: Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET 55N03J3 BVDSS ID RDSON 25V 55A 6mΩ Features • Dynamic dv/dt Rating • Simple Drive Requirement • Repetitive Avalanche Rated
|
Original
|
PDF
|
C411J3
MTN55N03J3
O-252
UL94V-0
55n03
MOSFET 55N03
ir 55n03
MTN55N03J3
DSA006750
|
kc-1206
Abstract: manual FW82801BA motherboard cd 75232 INTEL FW82801BA manual Intel 815 FW82815 INTEL FW82801BA motherboard schematic diagram motor control MC60 manual intel chipset fw82801ba ABIT-SL30 bc227
Text: Intel 815E Scalable Performance Board Development Kit Manual April 2001 Order Number: 273432-003 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of Sale for such products, Intel assumes no liability
|
Original
|
PDF
|
Index-111
kc-1206
manual FW82801BA motherboard
cd 75232
INTEL FW82801BA
manual Intel 815 FW82815
INTEL FW82801BA motherboard
schematic diagram motor control MC60
manual intel chipset fw82801ba
ABIT-SL30
bc227
|
55N03
Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR d1832 NP55N03SUG NP55N03SUG-E1-AY NEC to-252 marking information
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 55N03SUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 55N03SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 55N03SUG-E1-AY Note
|
Original
|
PDF
|
NP55N03SUG
NP55N03SUG
NP55N03SUG-E1-AY
NP55N03SUG-E2-AY
O-252
O-252)
55N03
MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
d1832
NP55N03SUG-E1-AY
NEC to-252 marking information
|
MOSFET 55N03
Abstract: 55n03
Text: TAIW AN s 55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin Definition; 1. Gate V DS V 2. Drain 3. Source 25 R os^m O ) I d (A) 6 @ Vc s = 1ÛV 30 9 @ V<;s z 4.5V 30 1 2 3 Features Block Diagram ♦ Advance Trench Proce s s Tech no logy
|
OCR Scan
|
PDF
|
TSM55N03
O-252
TSM55N
MOSFET 55N03
55n03
|
MOSFET 55N03
Abstract: No abstract text available
Text: TAIW AN s 55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin D efinition; 1. Gate 2. Drain 3. Source & V DS V R os^m O ) Id (A) 6 @ V cs = 1 û V 30 9 @ V<;s z 4.5V 30 25 1 2 3 Features Block Diagram ♦ A dvance Trench Proce s s T ech n o logy
|
OCR Scan
|
PDF
|
TSM55N03
O-252
MOSFET 55N03
|
|
|
