TSM3433
Abstract: No abstract text available
Text: TSM3433 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 42 @ VGS = -4.5V -5.6 57 @ VGS = -2.5V -4.8 80 @ VGS = -1.8V -1.4 Block Diagram ● Advance Trench Process Technology
|
Original
|
PDF
|
TSM3433
OT-26
TSM3433CX6
TSM3433
|
Untitled
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET b RoHS C O M P L IA N C E PRODUCT SUM M ARY SOT-26 V DS V) P in D e fin itio n : 654 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features R D S(on)<m Û) Id (A) 42 @ V gs = -4.5V -5.6
|
OCR Scan
|
PDF
|
TSM3433
OT-26
TSM3433CX6
OT-26
|
Untitled
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET bl COMPLIANCE RoHS PRODUCT SUM M ARY SOT-26 V DS V P in D e fin itio n : 65 4 1. Drain 2. Drain 3. G ate 6. Drain 5, Drain 4 . Source -20 1 23 Features RDS(on)<mÛ) b (A) 42 @ Vgs = -4.5V -5.6 57 @ VCS= -2.5V
|
OCR Scan
|
PDF
|
TSM3433
OT-26
TSM3433CX6
|
