40n60 igbt
Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263
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O-220
O-263
O-247
16N60
B1-10
24N60
30N60
40N60
40n60 igbt
35N120u1
B1116
equivalent for 30n60
40n60 equivalent
30n60 equivalent
30n60 to-220
ixsn 35N120U1
igbt equivalent to 40n60
80n60
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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b1113
Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Text: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2
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PLUS247
247TM
O-247
O-264
O-268
16N60U1
24N60U1
30N60U1
62N60U1
24N60AU1
b1113
diode b18
35N120AU1
40N60CD1
diode b129
50N60BD1
30N60BD1
40N60BD1
IXSH 35N120AU1
diode b14
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B1109
Abstract: b1105 B1115 80n60a 80N60B IXSN80N60A B1-76 15N120B B180
Text: SCSOA IGBT S-Series Contents IGBT High Speed Low VCE sat VCES max IC VCE(sat) max PLUS247 TO-204 (IXSX) (IXSM) TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page TC = 25 °C TC = 25 °C V A V 600 48 2.2 IXSH 24N60 1000 75 2.7 IXSH 45N100 1200
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PLUS247
O-204
O-247
O-264
O-268
80N60B
35N100A
15N120B
25N120A
B1109
b1105
B1115
80n60a
IXSN80N60A
B1-76
B180
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all type of thyristor
Abstract: mosfet power class d Discrete Thyristor Chip 1200 A thyristor 6912 mosfet rectifier diode thyristor phase control chip ixys thyristor thyristor 60 A IXYS CDWEP
Text: Symbols and Definitions Cies Ciss -di/dt IC ID IF IF AV M IFSM IGT IR IRM IT IT(AV)M ITSM RDS(on) Rthjc rT Tcase Th tfi Tj, T(vj) Tjm, T(vj)m trr VCE(sat) VCES VDRM VDSS VF VR VRRM VT VT0 Input capacitance of IGBT Input capacitance of MOSFET Rate of decrease of forward current
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TS2/765/17557
D-68623
all type of thyristor
mosfet power class d
Discrete Thyristor Chip
1200 A thyristor
6912 mosfet
rectifier diode
thyristor phase control chip
ixys thyristor
thyristor 60 A
IXYS CDWEP
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40N60BD1
Abstract: PLUS247
Text: IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) HiPerFAST TM IGBT with Diode = 600 V = 75 A = 2.1 V = 180 ns Preliminary Data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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40N60BD1
IC110
PLUS247
728B1
PLUS247
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Untitled
Abstract: No abstract text available
Text: IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) HiPerFAST TM IGBT with Diode = 600 V = 75 A = 2.1 V = 180 ns Preliminary Data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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40N60BD1
IC110
O-264
728B1
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diode b34
Abstract: b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor 40N60BD1 C110
Text: Advanced Technical Information HiPerFAST TM IGBT with Diode IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient
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40N60BD1
PLUS247
diode b34
b34 diode
b34 datasheet
b34 844
PLUS247
B34 on
B34 transistor
C110
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TO 521 MH
Abstract: 40N60CD1 PLUS247
Text: IGBT with Diode TM PLUS247 package IXSK 40N60CD1 IXSX 40N60CD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings PLUS 247TM (IXSX) Short Circuit SOA Capability = = = = 600 V 75 A 2.5 V 70 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V
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40N60CD1
PLUS247
247TM
TO 521 MH
40N60CD1
PLUS247
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode PLUS247 TM package IXSK 40N60CD1 IXSX 40N60CD1 VCES IC25 VCE sat tfi(typ) Maximum Ratings PLUS 247TM (IXSX) Short Circuit SOA Capability = = = = 600 V 75 A 2.5 V 70 ns Preliminary data Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V
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PLUS247
40N60CD1
40N60CD1
247TM
O-264
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TO-264
Abstract: 40N60BD1 PLUS247
Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode TM PLUS247 package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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40N60BD1
PLUS247
TO-264
40N60BD1
PLUS247
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Untitled
Abstract: No abstract text available
Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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PLUS247
40N60BD1
40N60BD1
247TM
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE sat tfi typ = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
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40N60C2
O-268
IC110
O-247
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40n60c2
Abstract: No abstract text available
Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs VCES IC25 VCE sat tfi typ IXGH 40N60C2 IXGT 40N60C2 = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V
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40N60C2
O-268
IC110
O-247
40n60c2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Data HiPerFASTTM IGBT IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600
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40N60B2
IC110
O-268
O-247
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40N60C2D1
Abstract: KF 520
Text: HiPerFASTTM IGBT with Diode VCES IC25 = = VCE SAT = tfi(typ = IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 C2-Class High Speed IGBTs 600 V 56 A 2.7 V 32 ns TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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40N60C2D1
O-247
IC110
O-268
O-268
Leade00
40N60C2D1
KF 520
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40n60c2d1
Abstract: *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D
Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IC25 IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 = 600 V = 75 A = 2.5 V = 32 ns VCE SAT tfi(typ) C2-Class High Speed IGBTs TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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40N60C2D1
O-247
IC110
40n60c2d1
*40n60c2d1
IXGH40N60C2D1
transistor kf 508
40N60
diode fr 307
40N60C2D
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information PolarTM IGBT with Low VCE sat VCES IC25 VCE(sat) IXGH 40N60A3D1 IXGT 40N60A3D1 = 600 V = 75 A < 1.25 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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40N60A3D1
40N60A3D1
IC110
O-268
O-247
405B2
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE sat tfi typ = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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40N60B2D1
IC110
O-268
O-247
728B1
123B1
728B1
065B1
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40N60B2D1
Abstract: IXGH40N60B2D1 40n60b2d 065B1 40n60 40N60B2
Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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40N60B2D1
IC110
O-268
728B1
123B1
728B1
065B1
40N60B2D1
IXGH40N60B2D1
40n60b2d
40n60
40N60B2
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ixgh40n60b2d1
Abstract: 40N60B2D1 40n60b QG SMD TRANS
Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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40N60B2D1
40N60B2D1
IC110
O-268
O-247
728B1
123B1
065B1
ixgh40n60b2d1
40n60b
QG SMD TRANS
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IXGH40N60C
Abstract: 40N60C TO-268 40n60
Text: HiPerFASTTM IGBT LightspeedTM Series VCES IC25 VCE sat tfi typ IXGH 40N60C IXGT 40N60C = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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40N60C
IC110
O-268
O-247
O-268
IXGH40N60C)
728B1
IXGH40N60C
40N60C
TO-268
40n60
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P 1010
Abstract: AL 102 074d
Text: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads
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40N60BD1
PLUS247â
O-247
P 1010
AL 102
074d
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Untitled
Abstract: No abstract text available
Text: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads
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40N60CD1
PLUS247â
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