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    40N60B Price and Stock

    IXYS Corporation IXSH40N60B

    IGBT 600V 75A 280W TO247
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    IXYS Corporation IXGH40N60B

    IGBT 600V 75A 250W TO247AD
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    IXYS Corporation IXGR40N60B

    IGBT 600V 70A 200W ISOPLUS247
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    IXYS Corporation IXST40N60B

    IGBT PT 600V 75A TO268AA
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    IXYS Corporation IXGH40N60B2

    IGBT 600V 75A 300W TO247
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    Find more 40N60B price and stock on Findchips.com

    40N60B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    40N60B3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    40N60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    40n60

    Abstract: 40N60B2D1 40N60B2
    Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching


    Original     		PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 065B1 728B1 123B1 40n60 40N60B2D1

    Untitled

    Abstract: No abstract text available
    Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF PLUS247 40N60BD1 40N60BD1 247TM

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600


    Original     		PDF 247TM 40N60BD1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


    Original     		PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 ISOPLUS247 E153432 IF110 2x31-06B

    diode b34

    Abstract: b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor 40N60BD1 C110
    Text: Advanced Technical Information HiPerFAST TM IGBT with Diode IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 40N60BD1 PLUS247 diode b34 b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor C110

    40N60BD1

    Abstract: 40N60B 40N60 IXGR40N60BD1 IXGR40N60
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 40N60B 40N60BD1 lead40N60BD1) 728B1 40N60B 40N60 IXGR40N60BD1 IXGR40N60

    TO-264

    Abstract: 40N60BD1 PLUS247
    Text: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode TM PLUS247 package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 40N60BD1 PLUS247 TO-264 40N60BD1 PLUS247

    40N60BD1

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		PDF 247TM 40N60BD1 728B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE sat tfi typ = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF 40N60B2D1 IC110 O-268 O-247 728B1 123B1 728B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 40N60B 40N60BD1 728B1

    40N60BD1

    Abstract: PLUS247
    Text: IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) HiPerFAST TM IGBT with Diode = 600 V = 75 A = 2.1 V = 180 ns Preliminary Data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


    Original     		PDF 40N60BD1 IC110 PLUS247 728B1 PLUS247

    40N60B2D1

    Abstract: IXGH40N60B2D1 40n60b2d 065B1 40n60 40N60B2
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF 40N60B2D1 IC110 O-268 728B1 123B1 728B1 065B1 40N60B2D1 IXGH40N60B2D1 40n60b2d 40n60 40N60B2

    IXGR40N60B2D1

    Abstract: 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


    Original     		PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 2x31-06B IXGR40N60B2D1 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247

    40N60B2

    Abstract: IXGH40N60B2
    Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 40N60B2 IC110 O-268 40N60B2 IXGH40N60B2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600


    Original     		PDF 40N60B2 IC110 O-268 O-247

    Untitled

    Abstract: No abstract text available
    Text: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		PDF 247TM 40N60BD1 728B1

    Untitled

    Abstract: No abstract text available
    Text: = IXSH 40N60B VCES = IXST 40N60B IC25 VCE sat = High Speed IGBT Short Circuit SOA Capability tfi typ 600V 75A 2.2V = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V


    Original     		PDF 40N60B

    40N60B

    Abstract: C110 IXGH40N60B IXGT40N60B packages to247 footprint jedec MS-150
    Text: HiPerFASTTM IGBT IXGH 40N60B IXGT 40N60B VCES IC25 VCE sat tfi = 600 V = 75 A = 2.1 V = 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V


    Original     		PDF 40N60B O-247 IXGT40N60B O-268 IXGH40N60B) 40N60B C110 IXGH40N60B IXGT40N60B packages to247 footprint jedec MS-150

    40n60b

    Abstract: No abstract text available
    Text: Advanced Technical Information IXGR 40N60BD1 IGBT with Diode ISOPLUS247TM package VCES IC25 VCE sat tfi(typ) Short Circuit SOA Capability (Electrically Isolated Back Side) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 40N60BD1 ISOPLUS247TM 40n60b

    ixgr40n60b2d1

    Abstract: IXGR40N60B2 IXGR40N60
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


    Original     		PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 IXGR40N60B2D1) 2x31-06B ixgr40n60b2d1 IXGR40N60B2 IXGR40N60

    ixgr40n60b2d1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet


    Original     		PDF ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 IXGR40N60B2D1) 2x31-06B ixgr40n60b2d1

    40N60BD1

    Abstract: 40n60b
    Text: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600


    Original     		PDF 40N60BD1 247TM 40N60BD1 40n60b

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information IXSH IXST High Speed IGBT 40N60B 40N60B Short Circuit SOA Capability VCES = 600 V IC25 = 75 A V CE sat = 2.2 V t Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V v GES


    OCR Scan     		PDF 40N60B O-247

    P 1010

    Abstract: AL 102 074d
    Text: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads


    OCR Scan     		PDF 40N60BD1 PLUS247â O-247 P 1010 AL 102 074d