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    I53 TRANSISTOR Search Results

    I53 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    I53 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units Collector-Base Voltage 1100 V


    Original     		PDF KSC5026M O-126

    QS 100 NPN Transistor

    Abstract: No abstract text available
    Text: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : fT=120MHz E C 1 6 2 5 3 4 C B C C SuperSOTTM-6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted


    Original     		PDF FMBS2383 120MHz QS 100 NPN Transistor

    C5026M-O

    Abstract: equivalent transistor for c5026m QS 100 NPN Transistor KSC5026M KSC5026MOS
    Text: KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage 1100


    Original     		PDF KSC5026M O-126 C5026M-O equivalent transistor for c5026m QS 100 NPN Transistor KSC5026M KSC5026MOS

    BDX53 equivalent

    Abstract: bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A
    Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • Hammer Drivers, Audio Amplifiers Applications • Power Liner and Switching Applications Features • Power Darlington TR • Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit


    Original     		PDF BDX53/A/B/C BDX54, BDX54A, BDX54B BDX54C O-220 BDX53 BDX53A BDX53B BDX53C BDX53 equivalent bdx53c equivalent bdx54c equivalent BDX53 BDX54 equivalent BDX53B BDX53A BDX53C BDX54 BDX54A

    Untitled

    Abstract: No abstract text available
    Text: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : Tf =120MHz E C 1 6 2 5 3 4 C B C SuperSOT TM C -6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted


    Original     		PDF FMBS2383 120MHz

    BDX53 equivalent

    Abstract: bdx53c equivalent
    Text: BDX53/A/B/C NPN Epitaxial Silicon Transistor Applications • • Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Features • • Power Darlington TR Complement to BDX54, BDX54A, BDX54B and BDX54C respectively Equivalent Circuit


    Original     		PDF BDX53/A/B/C BDX54, BDX54A, BDX54B BDX54C O-220 BDX53 BDX53A BDX53B BDX53C BDX53 equivalent bdx53c equivalent

    Untitled

    Abstract: No abstract text available
    Text: BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 • • • Switching and Amplifier Applications Suitable for automatic insertion in thick and thin-film circuits Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original     		PDF BC846 BC850 BC849, BC856 BC860 OT-23 BC846 BC847/850 BC848/849

    sot-23 Marking B1

    Abstract: BC850 fairchild sot-23 Device Marking pc b1 marking sot-23 720 SOT23 BC846 BC849 BC856 BC860 MARKING 720 SOT23
    Text: BC846 - BC850 NPN Epitaxial Silicon Transistor Features 3 • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC849, BC850 • Complement to BC856 . BC860 2 1 SOT-23 1. Base 2. Emitter 3. Collector


    Original     		PDF BC846 BC850 BC849, BC856 BC860 OT-23 BC846 BC847/850 BC848/849 sot-23 Marking B1 BC850 fairchild sot-23 Device Marking pc b1 marking sot-23 720 SOT23 BC849 BC856 BC860 MARKING 720 SOT23

    transistor A114

    Abstract: a114 transistor transistor a114 esd 2N7002KW
    Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002KW 2N7002KW JESD22 OT-323 transistor A114 a114 transistor transistor a114 esd

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


    Original     		PDF 2N7002KW JESD22 OT-323

    Untitled

    Abstract: No abstract text available
    Text: QFET TM FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA28N15

    FQA28N15

    Abstract: No abstract text available
    Text: QFET TM FQA28N15 150V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQA28N15 FQA28N15

    Untitled

    Abstract: No abstract text available
    Text: Features ● ● ● ● ● ● ● ● ● ● ● Non-Isolated Synchronous rectification design Adjustable Output voltage 2, 3, 4AMP Adjustable Positive Step Down Integrated Switching Regulator Over load protection 125% full load typical Remote ON/OFF Control(Ground Off)


    Original     		PDF UL94V-0 SIP12 12-Pin F/10V

    Untitled

    Abstract: No abstract text available
    Text: INNOLINE Output Voltage Features ●● Adjustable Non-Isolated ● ● ● ● ● ● ● ● DC/DC-Converter 1-2AMP Adjustable Positive Step Down Integrated Switching Regulator Internal Short Circuit Protection ON/OFF Control Ground Off UL94V-0 Package Material


    Original     		PDF UL94V-0 12-Pin SIP12

    B0725

    Abstract: No abstract text available
    Text: Tem ic VQIOOIJ/P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS M in (V) VQ1001J 30 VQ1001P Features Benefits • • • • • • • • • • Low On-Resistance: 0.85 Q Low Threshold: 1.4 V Low Input Capacitance: 38 pF


    OCR Scan     		PDF VQ1001J VQ1001P VQ1001J/P P-37655--Rev. B0725

    Untitled

    Abstract: No abstract text available
    Text: Temic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) rns^n) Max (Q) VGS(th) Id (A) (V) VN3515L 350 15 @ V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ V GS = 4.5 V 0.6 to 1.8


    OCR Scan     		PDF VN3515L/VN4012L VN3515L VN4012L P-38281--

    TI1151

    Abstract: TI-1151 P1AM TIL155 TI1153 TI-115 5318T TI-1153
    Text: TYPES TI 1151, TI 1152, TI 1153, TI 1154, TI 1155, TI 1156 N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS 50 2 3 52 5j- 5m ¡¡¡S “ HIGH-VOLTAGE, HIGH-FREQUENCY POWER TRANSISTORS FOR INDUSTRIAL APPLICATIONS D Z • 80 Watts at 55°C Case Temperature =!


    OCR Scan     		PDF

    30df

    Abstract: AI mm sot 553 TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF
    Text: TIP30F TIP30AF; TIP30BF ^ T1P30CF; TIP30DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S O T 1 8 6 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.


    OCR Scan     		PDF TIP30F TIP30AF; TIP30BF TIP30CF; TIP30DF OT186 TIP29F, T1P29AF, TIP29BF, TIP29CF 30df AI mm sot 553 TIP29BF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF

    2SC2331

    Abstract: SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y
    Text: T -5 > • S / - h s < r> — Silicon Power Transistor 2SC2331 N R N x t ^ + '> 7 ; H * > 'J U > h =7 I i f f l 2 S C 2 3 3 1 ia iS fê x ^ ^ 7 > /X n -, v - f > rm t U K ? n f c 7 - f > 7'- w t - ^ ( f - f i ¿*<7 K ÿ ^ f '< £ i r M M x - t o iff : m m )


    OCR Scan     		PDF 2SC2331 2SA1008 sC-46 220AB SIRBA TC5344A if4g 2SA1008 PBT GF 20 PBT GF 10 fr 2SC2331 Y

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN4392A Overview Package Dimensions The LB 1674V is a small motor driver ideal for mini-cassettes, headphone stereos and micro-cassettes. unit : mm 3175A-SSOP24 [LB 1674V] O.IS Functions and Features & it • 3-phase unipolar, brushless, sensorless m otor driver


    OCR Scan     		PDF EN4392A 175A-SSOP24 SSOP24

    M5206P

    Abstract: No abstract text available
    Text: MITSUBISHI SOUND PROCESSOR ICs M5206P LINEAR CONTROL DUAL VCA 1C DESCRIPTION The M 52 06 P has 2 channels o f built-in linear controlled VCA Voltage controlled amplifier . These channels can be controlled independently. The ICs applications include radio cassette tape recorders, car audio systems, and Hi-Fi


    OCR Scan     		PDF M5206P 10OdB M5206P

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEmCOND SECTOR SbE D H 430SS71 □ □M31bci ESS B H A S HI-7153/883 ¡33 8-Channel, 10-Bit, High Speed July1992 Sampling A/D Converter Features Description • This Circuit Is Processed in Accordance to Uil-Std883 and is Fully Conformant Under the Provisions of


    OCR Scan     		PDF 430SS71 M31bc HI-7153/883 10-Bit, July1992 Uil-Std883 20kHz 150mW MH-M-38510Compiant

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SOUND PROCESSOR ICs M5207L01/M5207L05 LINEAR CONTROL DUAL VCA IC DESCRIPTION T h e M 5 2 0 7 L is a variable gm -type V C A V o ltag e C ontrol A m p lifier IC designed fo r linear controlled electro nic volum e control. T h e IC o ffe rs capability o f controlling each channel


    OCR Scan     		PDF M5207L01/M5207L05 M5207L01 M5207L05 QQ223b2

    Untitled

    Abstract: No abstract text available
    Text: Temic Semiconductors 2 K x 8 CMOS Dual Port RAM M67132/M67142 Description The M67132/67142 are very low power CMOS dual port static RAMs organized as 2048 x 8. They are designed to be used as a stand-alone 8 bit dual port RAM or as a combination MASTER/SLAVE dual port for 16 bits or


    OCR Scan     		PDF M67132/M67142 M67132/67142 SCC9301033) 67I32E