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    2N7002KW Price and Stock

    onsemi 2N7002KW

    MOSFET N-CH 60V 310MA SC70
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    DigiKey 2N7002KW Digi-Reel 59,172 1
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    2N7002KW Cut Tape 59,172 1
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    2N7002KW Reel 57,000 3,000
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    Mouser Electronics 2N7002KW 47,398
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    Verical 2N7002KW 90,000 3,000
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    Arrow Electronics 2N7002KW 12,000 22 Weeks 3,000
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    2N7002KW 10,237 1
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    2N7002KW Cut Strips 5 22 Weeks 1
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    Newark 2N7002KW Cut Tape 32,480 5
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    2N7002KW Reel 6,000
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    Future Electronics 2N7002KW Reel 34 Weeks 15,000
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    Onlinecomponents.com 2N7002KW 90,000
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    Bristol Electronics 2N7002KW 5,843
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    Quest Components 2N7002KW 4,674
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    Rochester Electronics 2N7002KW 44,025 1
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    Avnet Asia 2N7002KW 22 Weeks 15,000
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    Master Electronics 2N7002KW 90,000
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    PanJit Group 2N7002KW-AU_R1_000A1

    SOT-323, MOSFET
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    DigiKey 2N7002KW-AU_R1_000A1 Digi-Reel 7,801 1
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    2N7002KW-AU_R1_000A1 Cut Tape 7,801 1
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    2N7002KW-AU_R1_000A1 Reel 3,000 3,000
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    Micro Commercial Components 2N7002KWBQ-TP

    2N7002KWBQ-TP
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    DigiKey 2N7002KWBQ-TP Cut Tape 5,988 1
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    Verical 2N7002KWBQ-TP 6,000 171
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    Arrow Electronics 2N7002KWBQ-TP Cut Strips 6,000 16 Weeks 1
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    Suzhou Good-Ark Electronics Co Ltd GS2N7002KW

    MOSFET, N-CH, SINGLE, 0.34A, 60V
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    DigiKey GS2N7002KW Digi-Reel 5,385 1
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    GS2N7002KW Cut Tape 5,385 1
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    GS2N7002KW Reel 3,000 3,000
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    Micro Commercial Components 2N7002KWHE3-TP

    N-CHANNEL MOSFET SOT-323
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    DigiKey 2N7002KWHE3-TP Digi-Reel 2,800 1
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    2N7002KWHE3-TP Cut Tape 2,800 1
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    Mouser Electronics 2N7002KWHE3-TP
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    New Advantage Corporation 2N7002KWHE3-TP 21,000 1
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    2N7002KW Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002KW Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET NCH 60V 310MA SOT323 Original PDF
    2N7002KW PanJit Semiconductors 60V N-Channel Enhancement Mode MOSFET - ESD Protected Original PDF
    2N7002KW-AU_R1_000A1 PanJit Group SOT-323, MOSFET Original PDF
    2N7002KW_R1_00001 PanJit Group SOT-323, MOSFET Original PDF
    2N7002KW-TP Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-323 PACKAG Original PDF

    2N7002KW Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETs 2N7002KW N-channel MOSFET SOT-323 FEATURES z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-323 2N7002KW OT-323 300mA -100A/Â PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETs 2N7002KW N-channel MOSFET SOT-323 FEATURES z High density cell design for Low RDS(on) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability


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    OT-323 2N7002KW OT-323 500mA PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002KW Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002KW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in


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    2N7002KW 300mA, 2N7002KW 2N7002KWG-AL3-R OT-323 QW-R209-033 PDF

    k72 diode

    Abstract: 2N7002KW K723
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


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    2N7002KW 500mA 200mA 2002/95/EC OT-323 MIL-STD-750 k72 diode 2N7002KW K723 PDF

    transistor A114

    Abstract: a114 transistor transistor a114 esd 2N7002KW
    Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


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    2N7002KW 2N7002KW JESD22 OT-323 transistor A114 a114 transistor transistor a114 esd PDF

    k72 wn

    Abstract: k72 diode 2N7002KW
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


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    2N7002KW 500mA 200mA 2002/95/EC OT-323 MIL-STD-750 2010-REV k72 wn k72 diode 2N7002KW PDF

    K72 marking diode

    Abstract: No abstract text available
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


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    2N7002KW 500mA 200mA 2002/95/EC OT-323 MIL-STD-750 2010-REV K72 marking diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant


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    2N7002KW JESD22 OT-323 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


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    2N7002KW 500mA 200mA 2010-REV PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-323 FEATURES Unit:inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • Advanced Trench Process Technology 0.087(2.20) 0.070(1.80) • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


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    2N7002KW 500mA 200mA OT-323 OT-323 Packa23 2010-REV PDF

    2N7002KW

    Abstract: MosFET
    Text: 2N7002KW 115mA , 60V, RDS ON 4  N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES         SOT-323 RDS(ON), VGS@10V, IDS@500mA=3


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    2N7002KW 115mA OT-323 500mA 200mA 2002/95/EC 31-Mar-2011 2N7002KW MosFET PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002KW Features • • • • • • • • High density cell design for Low RDS ON Voltage controlled small signal switch


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    2N7002KW OT-323 OT-323, MIL-STD-202, PDF

    marking 72K

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002KW Features • • • • • • • High density cell design for Low RDS ON Voltage controlled small signal switch


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    2N7002KW OT-323 OT-323, MIL-STD-202, 625K/W marking 72K PDF

    SOT-323

    Abstract: No abstract text available
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List. 1 Package outline. 2


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    2N7002KW 120sec 260sec 30sec DS-251127 SOT-323 PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


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    SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    AC82PM45

    Abstract: AC82GM45 KB926 AF82801IBM SLB8Q N10M-GE1-S G545A1 NV10M-GS tps51620 LA-5081P KIWA7
    Text: A B C D E 1 1 KIWA7/A8 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:0.4 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2008/03/25 Deciphered Date 2008/04/ Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    R1089, C1162 C1163, C1164 C1165 R1095 R1090, R1091, R1092, R1093 AC82PM45 AC82GM45 KB926 AF82801IBM SLB8Q N10M-GE1-S G545A1 NV10M-GS tps51620 LA-5081P KIWA7 PDF

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


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    SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA PDF

    k72 sot-23

    Abstract: sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303
    Text: TM Micro Commercial Components MOSFETS MCC Part Number Power Rating DrainSource Voltage Gate Threshold Voltage Drain Current Static DrainSource On Resistance PD VDS VGS ID rDS on (mW) V V mA Ω Polarity Marking Code Package Type Internal Diagram SMALL SIGNAL MOSFETS


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    2N7002DW OT-363 2N7002T 2SK3019 OT-523 2N7002KW 2N7002W 2SK3018 O-251 k72 sot-23 sot-23 Marking KN 72k SOT23 k72 r4 UM6K1 SI2302 SI2303 PDF

    diac kr 206

    Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
    Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com


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    element14 diac kr 206 BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE PDF

    EPD segment driver

    Abstract: No abstract text available
    Text: Doc. No. 4P008-00 E-paper Display COG Driver Interface Timing Description Detailed information to design a timing controller for 1.44”, 2”, and 2.7” E-paper panels Date 2012/07/27 Doc. No. 4P008-00 Revision 02 Design Engineering Approval 李 Check Design


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    4P008-00 EPD segment driver PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc. No.1P001-00 Product Specifications Customer Standard Description 2.0” TFT EPD Panel Model Name EG020AS012 Date 2013/07/15 Doc. No. 1P001-00 Revision 04 Customer Approval Date The above signature represents that the product specifications, testing regulation, and warranty in the specifications are accepted


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    1P001-00 EG020AS012 PDF

    Power MOSFET N-Channel sot-23

    Abstract: MOSFET P-channel SOT-23 12 mosfet sot23 si2301 Fig.24 SI2302
    Text: MCC TM Micro Commercial Components MOSFET MCC Part Number Power Rating DrainSource Voltage VDSS Gate Threshold Voltage Vth GS Drain Current IDMAX Static Drain-Source On Resistance RDS(ON)MAX (mW) (V) (V) (mA) (Ω) 2N7002 200 60 2.5 115 7.5 Package Type Polarity


    Original
    OT-23 OT-323 OT-523 OT-363 Power MOSFET N-Channel sot-23 MOSFET P-channel SOT-23 12 mosfet sot23 si2301 Fig.24 SI2302 PDF

    KB926

    Abstract: AC82PM45 LA-5081P tps51620 sis412 kiwa5 la-5081p AC82GM45 NV10M-GS intel GM45 cantiga n10m-ge1-s
    Text: A B C ZZZ ZZZ1 ZZZ2 ZZZ3 PCB LA-5081P LS-5081P LS-5082P D E 1 1 DAZ@ DAZ@ DAZ@ KIWA5/A6 2 2 Schematics Document Mobile Penryn uFCPGA with Intel Cantiga_GM/PM+ICH9-M core logic 3 3 REV:1.0 4 4 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification


    Original
    LA-5081P LS-5081P LS-5082P KB926 AC82PM45 LA-5081P tps51620 sis412 kiwa5 la-5081p AC82GM45 NV10M-GS intel GM45 cantiga n10m-ge1-s PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc. No.1P038-00 Product Specifications Standard Description 4.41” TFT EPD Panel Model Name ET044AS013 Date 2013/07/04 Doc. No. 1P038-00 Revision 03 PL AY S IN C . Customer VA Date SI VE D IS Customer Approval PE R The above signature represents that the product specifications, testing regulation,


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    1P038-00 ET044AS013 PDF