VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS
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VN3515L/VN4012L
VN3515L
VN4012L
18-Jul-08
VN3515L
VN4012L
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TN2540
Abstract: VN3515 VN3515L VN4012 VN4012L
Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 15Ω 1.8V 0.15A VN3515L 400V 12Ω 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology
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VN3515L
VN4012L
VN4012
100mA
160mA
TN2540
VN3515
VN3515L
VN4012
VN4012L
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
VN3515L
VN4012L
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4012L
Abstract: VN3515L VN4012L
Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS
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VN3515L/VN4012L
VN3515L
VN4012L
08-Apr-05
4012L
VN3515L
VN4012L
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VN4012B
Abstract: p-channel DMOS 125 diode VN3515 VN3515L VN4012 VN4012L
Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 350V 15Ω 1.8V 0.15A — VN3515L 400V 12Ω 1.8V 0.15A VN4012B VN4012L Features Advanced DMOS Technology
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VN3515L
VN4012L
VN4012B
100mA
100mA,
VN4012B
p-channel DMOS
125 diode
VN3515
VN3515L
VN4012
VN4012L
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4012l
Abstract: marking code diode 04 to-18 siliconix VN3515L VN4012L
Text: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS
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VN3515L/VN4012L
VN3515L
VN4012L
Nov-00
4012l
marking code diode 04 to-18 siliconix
VN3515L
VN4012L
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VN3515L
Abstract: VN4012L AUG94
Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
15-Aug-94
VN3515L
VN4012L
AUG94
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
15-Aug-94
VN3515L
VN4012L
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VN3515L
Abstract: VN4012L
Text: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
15-Aug-94
VN3515L
VN4012L
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TN2540
Abstract: VN3515 VN3515L VN4012 VN4012L
Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 15Ω 1.8V 0.15A VN3515L 400V 12Ω 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology
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VN3515L
VN4012L
100mA
160mA
TN2540
VN3515
VN3515L
VN4012
VN4012L
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TO243AA
Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Text: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G
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2N7000-G
2N7002-G
DN1509N8-G
DN2470K4-G
DN2530N3-G
DN2530N8-G
DN2535N3-G
DN2535N5-G
DN2540N3-G
DN2540N5-G
TO243AA
TO-243AA
tn0604n
TO-236AB
oc sot-89
TC2320TG
TN2130K1-G
LND150N8-G
VN0104N3-G
TO-236-AB
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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Untitled
Abstract: No abstract text available
Text: Tem ic VN3515L/VN4012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number V BR DSS M in (V ) rosion) Max (Q) V c s u to iV ) I d (A ) V N 3515L 350 15 @ V G,s = 4.5 V 0.6 to 1.8 0.15 V N 40Î2L 400 12 @ V(3s = 4.5 V
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VN3515L/VN4012L
3515L
P-38281--Rev.
15-Aug-94
P-38281--
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Untitled
Abstract: No abstract text available
Text: fíl Supertex inc. VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs BVDSS/ R DS ON ^GS(th) B V dgs (max) (max) 350V 15Q 1.8V 400V 12£2 1.8V 1Í Ordering Information Order Number / Package TO-39 TO-92 0.15 A — VN3515L 0.15A VN4012B VN4012L
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VN3515L
VN4012L
VN4012B
100mA
100mA,
TN06D
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Untitled
Abstract: No abstract text available
Text: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information JÎ Order Number / Package BVDSS/ ^D S O N ^ G S (th ) b v dgs (max) (max) 350V 150 1.8V 0.15A VN3515L 400V 12 fl 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology
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VN3515L
VN4012L
capab50
VN3515
VN4012
300ns
TN2540
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Untitled
Abstract: No abstract text available
Text: VN4012L, VN3515L N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA PRODUCT SUMMARY PART NUMBER V (BR|DSS VN4012L 400 12 0.16 VN3515L 350 15 0.15 Performance Curves: JFES5& BOTTOM VIEW •d "P (A) VNDV40 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VN4012L,
VN3515L
VN4012L
VN3515L
O-226AA)
VNDV40
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TN3512L
Abstract: No abstract text available
Text: VNDV1 DIE N-Channel Enhancement-Mode MOS Transistor J 3 T in co rp o ra ted VNDV1CHP* Gate Pad 0.005 0.127 0.007 (0.178) TN3512L TN4012L VN3515L VN4012L ‘ Meets or exceeds specification for all part numbers listed below Source Pad For additional design information please consult the
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TN3512L
TN4012L
VN3515L
VN4012L
VNDV40.
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Untitled
Abstract: No abstract text available
Text: Tem ic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS VN3515L VN4012L r DS(on) M ax (£2) (V ) 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 400 12 @ V GS = 4.5 V 0.6 to 1.8 0.16 Applications
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--Rev.
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4012L
Abstract: No abstract text available
Text: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV dss / ^DS ON ^GS(th) ^D(ON) Order Number / Package b v dgs (max) (max) (min) TO-39 TO-92 3 5 0V 15Q 1.8V 0.15A — V N 3 51 5L 4 0 0V 12Q 1.8V 0.15A V N 4 01 2B VN 4012L
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VN3515L
VN4012L
4012L
300ns
4012L
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Untitled
Abstract: No abstract text available
Text: Temic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) rns^n) Max (Q) VGS(th) Id (A) (V) VN3515L 350 15 @ V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ V GS = 4.5 V 0.6 to 1.8
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VN3515L/VN4012L
VN3515L
VN4012L
P-38281--
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Untitled
Abstract: No abstract text available
Text: ÇjpSupertex inc. vn4oi 2l N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d s <o n Order Number / Package ^G S lh ) (max) b v dgs (max) TO-39 TO-92 350V 15fi 1.8V — VN3515L 400V 12 fi 1.8V VN4012B VN4012L Features Advanced DMOS Technology
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VN4012B
VN3515L
VN4012L
100mA,
100mA
VN4012
160mA
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Untitled
Abstract: No abstract text available
Text: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs If b v dss/ ^ G S th I d (ON) (max) (min) Order Number / Package TO-92 350V 15& 1.8V 0.15A VN3515L 400V 12£2 1.8V 0.15A VN4012L Features Advanced DMOS Technology
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VN3515L
VN4012L
100mA
100mA,
160mA
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40128
Abstract: No abstract text available
Text: SILICONIX INC IflE D • ÖS54735 0014110 b VN4012 SERIES JLfTZ'Siliccsnix M in c o r p o r a te d N-Channel E n h a n ce m e n t-M o d e MOS T ra n sisto rs T -'27-23 PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS rDS(ON) ( il) (V) Id (A) PACKAGE VN4012L 400
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S54735
VN4012
VN4012L
VN4012B
O-205AF
VN3515L
VNDV40
250X1
40128
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