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    HYB39S64400 Search Results

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    HYB39S64400 Price and Stock

    Infineon Technologies AG HYB39S64400CT-8

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HYB39S64400CT-8 11
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    Siemens HYB39S64400AT-8

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    Bristol Electronics HYB39S64400AT-8 10
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    Infineon Technologies AG HYB39S64400BT-8

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    Bristol Electronics HYB39S64400BT-8 9
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    Infineon Technologies AG HYB39S64400BT-7.5

    16M X 4 SYNCHRONOUS DRAM, 5.4 ns, 54 Pin Plastic SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HYB39S64400BT-7.5 1,236
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    Siemens HYB39S64400AT-10

    16M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO54
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    Quest Components HYB39S64400AT-10 80
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    HYB39S64400 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HYB39S64400 Infineon Technologies 64-MBit Synchronous DRAM Original PDF
    HYB39S64400 Siemens 64 MBit Synchronous DRAM Original PDF
    HYB 39S64400-800-160ET(L) Infineon Technologies HYB 39S64400-800-160ET(L) Original PDF
    HYB39S64400AT Siemens 64 MBit Synchronous DRAM Original PDF
    HYB39S64400AT-10 Siemens 64 MBit Synchronous DRAM Original PDF
    HYB39S64400AT-10 Siemens 64 MBit Synchronous DRAM Scan PDF
    HYB39S64400AT-8 Siemens 64 MBit Synchronous DRAM Original PDF
    HYB39S64400AT-8 Siemens 64 MBit Synchronous DRAM Scan PDF
    HYB39S64400AT-8B Siemens 64 MBit Synchronous DRAM Original PDF
    HYB39S64400AT-8B Siemens 64 MBit Synchronous DRAM Scan PDF
    HYB39S64400ATL Siemens 64 MBit Synchronous DRAM Original PDF
    HYB39S64400ATL-10 Siemens 64Mbit Synchronous DRAM Original PDF
    HYB39S64400ATL-10 Siemens 64 MBit Synchronous DRAM Scan PDF
    HYB39S64400ATL-8 Siemens 64Mbit Synchronous DRAM Original PDF
    HYB39S64400ATL-8 Siemens 64 MBit Synchronous DRAM Scan PDF
    HYB39S64400ATL-8B Siemens 64Mbit Synchronous DRAM Original PDF
    HYB39S64400ATL-8B Siemens 64 MBit Synchronous DRAM Scan PDF
    HYB39S64400BT-10 Siemens 64MBit Synchronous DRAM Original PDF
    HYB39S64400BT-7.5 Infineon Technologies Original PDF
    HYB39S64400BT-8 Infineon Technologies Original PDF

    HYB39S64400 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PC133-333

    Abstract: P-TSOPII-54 hyb39s64400
    Text: HYB39S64400/800/160A/BT L 64MBit Synchronous DRAM Ultra High Speed 64 MBit Synchronous DRAM PC143 & PC133 • High Performance: -7 -7.5 Units fCKmax. 143 133 MHz tCK3 7 7.5 ns tAC3 5.4 5.4 ns tCK2 10 10 ns tAC2 5.5 6 ns • Fully Synchronous to Positive Clock Edge


    Original     		PDF HYB39S64400/800/160A/BT 64MBit PC143 PC133 P-TSOPII-54 400mil PC143 PC133 PC133-333 hyb39s64400

    smd marking code bs

    Abstract: TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6 P-TSOPII-54
    Text: HYB39S64400/800/160BT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: 7.5 -8 -10 Units fCKmax. 133 125 100 MHz tCK3 7.5 8 10 ns tAC3 5.4 6 7 ns tCK2 10 10 15 ns tAC2 6 6 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S64400/800/160BT 64MBit P-TSOPII-54 400mil PC133 PC100 smd marking code bs TSOP RECEIVER 39S64160BT-8 MARKING AX5 sdram 4 bank 4096 16 smd code marking t6

    P-TSOPII-54

    Abstract: 39s64160at-8
    Text: HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns • Fully Synchronous to Positive Clock Edge • 0 to 70 °C operating temperature


    Original     		PDF HYB39S64400/800/160AT 64MBit P-TSOPII-54 400mil PC100 39s64160at-8

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    P-TSOPII-54

    Abstract: caz smd PC133 registered reference design
    Text: HYB 39S64400/800/160ET L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM Preliminary Datasheet • Automatic and Controlled Precharge Command • High Performance: -7 -7.5 -8 Units fCKMAX 143 133 125 MHz tCK3 7 7.5 8 ns tAC3 5.4 5.4 6 ns tCK2 7.5 10 10


    Original     		PDF 39S64400/800/160ET 64-MBit P-TSOPII-54 caz smd PC133 registered reference design

    SMD MARKING T20

    Abstract: smd marking T22 MARKING A3 SMD MARKING CODE a09
    Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge


    Original     		PDF 39S64400/800CT 64-MBit SPT03933 SMD MARKING T20 smd marking T22 MARKING A3 SMD MARKING CODE a09

    9633E

    Abstract: 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E
    Text: INFORMATION NOTE IBIS MODELS FOR SIEMENS DRAM and SDRAMs 9.96 InfIBIS.DOC IBIS MODELS I/O-Buffer Information Specification IBIS Behavioral IBIS is an emerging standard for electronic behavioral specifications of digital integrated circuit input/output (I/O) analog characteristics. IBIS


    Original     		PDF 982e-01 814e-01 677e-01 602e-01 570e-01 640e-01 828e-01 126e-01 528e-01 027e-01 9633E 3107E-01 3520E-11 805E-01 853e HYB39S64800T max 8734E 1600E-03 SIEMEMS transistor 702E

    cbx smd code

    Abstract: SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22
    Text: HYB 39S64400/800CT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • High Performance: • Full page (optional) for sequential wrap around • Multiple Burst Read with Single Write Operation -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns • Automatic and Controlled Precharge


    Original     		PDF 39S64400/800CT 64-MBit BanT14 SPT03933 HYB39S64400/800/160CT 64MBit cbx smd code SMD marking code ax2 PC100-222 PC133-333 P-TSOPII-54 smd marking T22

    P-TSOPII-54

    Abstract: Q67100-Q1838 Q67100-Q2781
    Text: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns


    Original     		PDF 39S64400/800/160BT 64-MBit SPT03933 P-TSOPII-54 Q67100-Q1838 Q67100-Q2781

    39S64160BT-8

    Abstract: SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY
    Text: HYB 39S64400/800/160BT L 64-MBit Synchronous DRAM 64-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 Units fCKMAX 133 125 MHz tCK3 7.5 8 ns tAC3 5.4 6 ns


    Original     		PDF 39S64400/800/160BT 64-MBit SPT03933 39S64160BT-8 SMD MARKING T5 application of sequential circuit CAZ MARKING marking RBY

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write Controlled


    OCR Scan     		PDF HYB39S64400/800/160AT 64MBit

    BA0A11

    Abstract: No abstract text available
    Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -10 Units fCKmax. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 15 ns tAC2 6 8 ns Automatic Command and Read with Single Write


    OCR Scan     		PDF HYB39S64400/800/160AT 64MBit P-TSOPII-54 400mil HYB39S 64400/800/160AT BA0A11

    BA0A11

    Abstract: PC143-333
    Text: HYB39S64400/800/160A/BT L 64MBit Synchronous DRAM r Infineon Ultra High Speed 64 MBit Synchronous DRAM PC143 & PC133 • High Performance: Multiple Burst Operation -7 -7.5 Units fCKmax. 143 133 MHz tCK3 7 7.5 ns tAC3 5.4 5.4 ns tCK2 10 10 ns tAC2 5.5 6 ns


    OCR Scan     		PDF HYB39S64400/800/160A/BT 64MBit PC143 PC133 P-TSOPII-54 400mil PC143 PC133 BA0A11 PC143-333

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns Automatic Command and Read


    OCR Scan     		PDF HYB39S64400/800/160AT 64MBit

    Untitled

    Abstract: No abstract text available
    Text: HY B39S64400/800/160BT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation 7.5 -8 -10 Units fCKmax. 133 125 100 MHz tCK3 7.5 8 10 ns tAC3 5.4 6 7 ns tCK2 10 10 15 ns tAC2 6 6 8 ns Automatic Command and Read with


    OCR Scan     		PDF B39S64400/800/160BT 64MBit

    IT15

    Abstract: SMD M1A IT191 smd marking KH PC100-222 P-TSOPII-54 39S64800AT-8 39S64160A BA0A11 PC66-222
    Text: S IE M E N S H Y B 3 9S 64 400 /80 0/160A T L 64M B it S ynch ro n o u s DRAM 64 M Bit S yn ch ro n o u s DRAM • High Perform ance: M ultiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 M Hz tC K 3 8 10 10 ns tA C 3 6 6 7 ns Autom atic Com m and


    OCR Scan     		PDF HYB39S64400/800/160AT 64MBit IT15 SMD M1A IT191 smd marking KH PC100-222 P-TSOPII-54 39S64800AT-8 39S64160A BA0A11 PC66-222