Untitled
Abstract: No abstract text available
Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write Controlled
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HYB39S64400/800/160AT
64MBit
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SMD MARKING CODE aO9
Abstract: No abstract text available
Text: H YB39S64400/800/160BT L 64MBit Synchronous DRAM îlfîîl0Oil 64 M Bit S ynch ro n o u s DRAM • High Perform ance: M ultiple Burst Operation 7.5 -8 -10 Units fCKmax. 133 125 100 M Hz tC K 3 7.5 8 10 ns tA C 3 5.4 6 7 ns tC K 2 10 10 15 ns tA C 2 6 6 8
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HYB39S64400/800/160BT
64MBit
SMD MARKING CODE aO9
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BA0A11
Abstract: No abstract text available
Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -10 Units fCKmax. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 15 ns tAC2 6 8 ns Automatic Command and Read with Single Write
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HYB39S64400/800/160AT
64MBit
P-TSOPII-54
400mil
HYB39S
64400/800/160AT
BA0A11
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BA0A11
Abstract: PC143-333
Text: HYB39S64400/800/160A/BT L 64MBit Synchronous DRAM r Infineon Ultra High Speed 64 MBit Synchronous DRAM PC143 & PC133 • High Performance: Multiple Burst Operation -7 -7.5 Units fCKmax. 143 133 MHz tCK3 7 7.5 ns tAC3 5.4 5.4 ns tCK2 10 10 ns tAC2 5.5 6 ns
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HYB39S64400/800/160A/BT
64MBit
PC143
PC133
P-TSOPII-54
400mil
PC143
PC133
BA0A11
PC143-333
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYB39S64400/800/160AT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns tCK2 10 12 15 ns tAC2 6 7 8 ns Automatic Command and Read
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HYB39S64400/800/160AT
64MBit
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TSOP54-2
Abstract: No abstract text available
Text: HYB39S6440x/80x/16xAT L 64M B it Synchronous DRAM SIEMENS 64 MBit Synchronous DRAM Advanced Inform ation • High Performance: -8 -10 Units fCKmax. 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tCK2 10 12 ns tAC2 6 8 ns Multiple Burst Operation Automatic Command Programmable W rap Sequence: Sequential
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HYB39S6440x/80x/16xAT
P-TSOPII-54
400mil
64MBit
TSOP54-2
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Untitled
Abstract: No abstract text available
Text: HY B39S64400/800/160BT L 64MBit Synchronous DRAM 64 MBit Synchronous DRAM • High Performance: Multiple Burst Operation 7.5 -8 -10 Units fCKmax. 133 125 100 MHz tCK3 7.5 8 10 ns tAC3 5.4 6 7 ns tCK2 10 10 15 ns tAC2 6 6 8 ns Automatic Command and Read with
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B39S64400/800/160BT
64MBit
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BA0A11
Abstract: SMD MARKING CODE aO9
Text: H Y B 39S64400/800/160A/BT L 64MBit Synchronous DRAM Ultra High Speed 64 MBit Synchronous DRAM PC143 & PC133 • High Perform ance: M ultiple Burst Operation -7 -7.5 Units fCKmax. 143 133 M Hz tC K 3 7 7.5 ns tA C 3 5.4 5.4 ns Autom atic C om m and and Read
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39S64400/800/160A/BT
64MBit
PC143
PC133
P-TSOPII-54
GPX09039
BA0A11
SMD MARKING CODE aO9
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BA0A11
Abstract: 39S64800T-80 39S648Q0T-10 SMD MARKING CODE aO9
Text: HYB39S6440X/8ÖX/16xT 64MBit Synchronous DRAM SIEM ENS 64 MBit Synchronous DRAM Advanced Information • High Performance: • Multiple Burst Read with Operation Single Write -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns • Data Mask for Read / Write control x4, x8
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HYB39S6440X/8
X/16xT
64MBit
P-TSOPII-54
400mil
B39S6440X/80X/16xT
PII-54
400mil,
TSOPN-54
BA0A11
39S64800T-80
39S648Q0T-10
SMD MARKING CODE aO9
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IT15
Abstract: SMD M1A IT191 smd marking KH PC100-222 P-TSOPII-54 39S64800AT-8 39S64160A BA0A11 PC66-222
Text: S IE M E N S H Y B 3 9S 64 400 /80 0/160A T L 64M B it S ynch ro n o u s DRAM 64 M Bit S yn ch ro n o u s DRAM • High Perform ance: M ultiple Burst Operation -8 -8B -10 Units fCKmax. 125 100 100 M Hz tC K 3 8 10 10 ns tA C 3 6 6 7 ns Autom atic Com m and
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HYB39S64400/800/160AT
64MBit
IT15
SMD M1A
IT191
smd marking KH
PC100-222
P-TSOPII-54
39S64800AT-8
39S64160A
BA0A11
PC66-222
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