39S256160T
Abstract: TSOP54-2 APA10 39S256160T-8 39S256400T-8
Text: H YB39S25640x/80x/16xT 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Target Information Rev. 0.6 • High Performance: Multiple Burst Operation -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns Automatic Command and Read with Single Controlled
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OCR Scan
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YB39S25640x/80x/16xT
256MBit
P-TSOPII-54
400mil
P-TSOPII-54
400mil,
TSOPII-54
TSOP54-2
39S256160T
APA10
39S256160T-8
39S256400T-8
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PDF
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39S256160T
Abstract: PC100-322-620 smd CAY PC100-322 P-TSOPII-54
Text: HYB39S256400/800/160T 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Preliminary Information • High Performance: -8 -8A -8B Units fCK 125 125 100 MHz tCK3 8 8 10 ns tAC3 6 6 6 ns tCK2 10 12 15 ns tAC2 6 6 7 ns • Fully Synchronous to Positive Clock Edge
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Original
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HYB39S256400/800/160T
256MBit
P-TSOPII-54
400mil
PC100
3-2T10
HYB39S256400/800/160AT
39S256160T
PC100-322-620
smd CAY
PC100-322
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 256 MBit Synchronous DRAM HYB 39S256400/800/160T Preliminary Information • High Performance: Multiple Burst Read with Single W rite Operation -8 -8B -10 Units 125 100 100 MHz fCK3 8 10 10 ns Data M ask for Read/W rite control fAC3 6 6 7 ns Data M ask for byte control
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OCR Scan
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39S256400/800/160T
0235b05
39S256400/80Q/160AT
A53SbDS
D1113G0
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PDF
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tube az1
Abstract: smd CAY smd marking T22 smd transistor at t21 PC100-322-620 MARKING AX5 by1 SMD marking RBY transistor smd marking mx transistor SMD t15
Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10
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Original
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39S256400/800/160T
256-MBit
SPT03933
tube az1
smd CAY
smd marking T22
smd transistor at t21
PC100-322-620
MARKING AX5
by1 SMD
marking RBY
transistor smd marking mx
transistor SMD t15
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PDF
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39S256160T
Abstract: PC100-322-620 MARKING AX5 SMD MARKING T20
Text: HYB 39S256400/800/160T 256-MBit Synchronous DRAM 256-MBit Synchronous DRAM • Multiple Burst Read with Single Write Operation • High Performance: • Automatic and Controlled Precharge Command -7.5 -8 -8A -8B Units fCK 133 125 125 100 MHz tCK3 7.5 8 8 10
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Original
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39S256400/800/160T
256-MBit
SPT03933
39S256160T
PC100-322-620
MARKING AX5
SMD MARKING T20
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PDF
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Untitled
Abstract: No abstract text available
Text: HYB39S256400/800/160T 256MBit Synchronous DRAM SIEMENS 256 MBit Synchronous DRAM Preliminary Information • High Performance: Multiple Burst Operation -8 -8B -10 Units fCK 125 100 100 MHz tCK3 8 10 10 ns tAC3 6 6 7 ns Automatic Command and Read with Single Write
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OCR Scan
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HYB39S256400/800/160T
256MBit
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PDF
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39S256160T
Abstract: P-TSOPII-54
Text: HYB39S25640x/80x/16xT 256MBit Synchronous DRAM 256 MBit Synchronous DRAM Target Information Rev. 0.5 High Performance: -8 -10 Units fCK 125 100 MHz tCK3 8 10 ns tAC3 6 7 ns tAC2 6 8 ns • Multiple Burst Read with Single Write Operation • Automatic Command
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Original
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HYB39S25640x/80x/16xT
256MBit
P-TSOPII-54
400mil,
TSOPII-54
TSOP54-2
39S256160T
P-TSOPII-54
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PDF
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