Untitled
Abstract: No abstract text available
Text: HY5DU28422E L T HY5DU28822E(L)T HY5DU281622E(L)T 128M DDR SDRAM HY5DU28422E(L)T HY5DU28822E(L)T HY5DU281622E(L)T This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422E
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Untitled
Abstract: No abstract text available
Text: HY5DU28422AT HY5DU28822AT HY5DU281622AT 3rd 128M DDR SDRAM HY5DU28422AT HY5DU28822AT HY5DU281622AT Revision 1.3 April 2001 Rev. 1.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 128Mb x4, x8, x16 Double Data Rate SDRAM
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HY5DU28422AT
HY5DU28822AT
HY5DU281622AT
128Mb
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DDR200
Abstract: DDR266 DDR266A DDR266B DDR333
Text: HY5DU28422E L T HY5DU28822E(L)T HY5DU281622E(L)T 128M DDR SDRAM HY5DU28422E(L)T HY5DU28822E(L)T HY5DU281622E(L)T This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422E
HY5DU28822E
HY5DU281622E
DDR200
DDR266
DDR266A
DDR266B
DDR333
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HY5DU281622
Abstract: HY5DU281622T HY5DU28422T HY5DU28822T
Text: HY5DU28422T HY5DU28822T HY5DU281622T 2nd 128M DDR SDRAM HY5DU28422T HY5DU28822T HY5DU281622T Revision 1.3 April 2001 Rev. 1.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 128Mb x4, x8, x16 Double Data Rate SDRAM
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HY5DU28422T
HY5DU28822T
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128Mb
HY5DU281622
HY5DU281622T
HY5DU28422T
HY5DU28822T
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Untitled
Abstract: No abstract text available
Text: HY5DU28422ET HY5DU28822ET HY5DU281622ET 128M DDR SDRAM HY5DU28422ET HY5DU28822ET HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422ET
HY5DU28822ET
HY5DU281622ET
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Untitled
Abstract: No abstract text available
Text: HY5DU28422AT HY5DU28822AT HY5DU281622AT 3rd 128M DDR SDRAM HY5DU28422AT HY5DU28822AT HY5DU281622AT Revision 0.1 Oct. 2001 Rev. 0.1/ Oct. 01 This document is a general product description and is subject to change without notice. 128Mb x4, x8, x16 Double Data Rate SDRAM
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HY5DU28422AT
HY5DU28822AT
HY5DU281622AT
128Mb
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Untitled
Abstract: No abstract text available
Text: HY5DU28822 4 Banks x 4M x 8Bit Double Data Rate SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DU28822 is a 134,217,728-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5DU28822 is organized
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HY5DU28822
HY5DU28822
728-bit
304x8.
A10/AP
400mil
66pin
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Untitled
Abstract: No abstract text available
Text: HY5DU28422D L T HY5DU28822D(L)T HY5DU281622D(L)T 128Mb-S DDR SDRAM HY5DU28422D(L)T HY5DU28822D(L)T HY5DU281622D(L)T This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422D
HY5DU28822D
HY5DU281622D
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hy5du
Abstract: No abstract text available
Text: HY5DU28422D L T HY5DU28822D(L)T HY5DU281622D(L)T 128M-S DDR SDRAM HY5DU28422D(L)T HY5DU28822D(L)T HY5DU281622D(L)T This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422D
HY5DU28822D
HY5DU281622D
128M-S
hy5du
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Untitled
Abstract: No abstract text available
Text: HY5DU28422ET HY5DU28822ET HY5DU281622ET 128M DDR SDRAM HY5DU28422ET HY5DU28822ET HY5DU281622ET This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422ET
HY5DU28822ET
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HY5DU281622ALT
Abstract: HY5DU281622AT HY5DU28422AT HY5DU28822AT
Text: HY5DU28422AT HY5DU28822AT HY5DU281622AT 3rd 128M DDR SDRAM HY5DU28422AT HY5DU28822AT HY5DU281622AT This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422AT
HY5DU28822AT
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HY5DU281622ALT
HY5DU281622AT
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HY5DU28822AT
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DDR266
Abstract: DDR266A DDR333
Text: HY5DU28422ETP HY5DU28822ETP HY5DU281622ETP 128Mb DDR SDRAM HY5DU28422ETP HY5DU28822ETP HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422ETP
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128Mb
DDR266
DDR266A
DDR333
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DDR266
Abstract: DDR266A DDR333 HY5DU281622ETP
Text: HY5DU28422ETP HY5DU28822ETP HY5DU281622ETP 128Mb DDR SDRAM HY5DU28422ETP HY5DU28822ETP HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422ETP
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128Mb
DDR266
DDR266A
DDR333
HY5DU281622ETP
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Untitled
Abstract: No abstract text available
Text: HY5DU28422A L T HY5DU28822A(L)T HY5DU281622A(L)T 3rd 128M DDR SDRAM HY5DU28422A(L)T HY5DU28822A(L)T HY5DU281622A(L)T This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422A
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Abstract: No abstract text available
Text: HY5DU28822 4 Banks x 4M x 8Bit Double Data Rate SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DU28822 is a 134,217,728-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5DU28822 is organized
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HY5DU28822
HY5DU28822
728-bit
304x8.
A10/AP
400mil
66pin
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HY5DU28822T
Abstract: PC200
Text: HY5DU28822 4 Banks x 4M x 8Bit Double Data Rate SDRAM PRELIMINARY DESCRIPTION The Hyundai HY5DU28822 is a 134,217,728-bit CMOS Double Data Rate DDR Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY5DU28822 is organized
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HY5DU28822
HY5DU28822
728-bit
304x8.
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400mil
66pin
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PC200
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DDR200
Abstract: DDR266 DDR266A DDR266B DDR333
Text: HY5DU28422B L T HY5DU28822B(L)T 128M-S DDR SDRAM HY5DU28422B(L)T HY5DU28822B(L)T This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422B
HY5DU28822B
128M-S
DDR200
DDR266
DDR266A
DDR266B
DDR333
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HY5DU281622
Abstract: HY5DU281622T HY5DU28422T HY5DU28822T
Text: HY5DU28422T HY5DU28822T HY5DU281622T 2nd 128M DDR SDRAM HY5DU28422T HY5DU28822T HY5DU281622T Revision 1.3 April 2001 Rev. 1.3 / Apr. 2001 This document is a general product description and is subject to change without notice. 128Mb x4, x8, x16 Double Data Rate SDRAM
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HY5DU28422T
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HY5DU281622
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HY5DU28422T
HY5DU28822T
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Untitled
Abstract: No abstract text available
Text: HY5DU28422A L T HY5DU28822A(L)T HY5DU281622A(L)T 3rd 128M DDR SDRAM HY5DU28422A(L)T HY5DU28822A(L)T HY5DU281622A(L)T This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422A
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udqs
Abstract: No abstract text available
Text: HY5DU28422B L T HY5DU28822B(L)T 128M-S DDR SDRAM HY5DU28422B(L)T HY5DU28822B(L)T This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422B
HY5DU28822B
128M-S
udqs
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HY5DU281622
Abstract: DDR200 DDR266 DDR266A DDR266B DDR333
Text: HY5DU28422D L T HY5DU28822D(L)T HY5DU281622D(L)T 128M-S DDR SDRAM HY5DU28422D(L)T HY5DU28822D(L)T HY5DU281622D(L)T This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5DU28422D
HY5DU28822D
HY5DU281622D
128M-S
HY5DU281622
DDR200
DDR266
DDR266A
DDR266B
DDR333
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Untitled
Abstract: No abstract text available
Text: HY5DU28422ETP HY5DU28822ETP HY5DU281622ETP 128M DDR SDRAM HY5DU28422ETP HY5DU28822ETP HY5DU281622ETP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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urst 1081
Abstract: No abstract text available
Text: 2nd 128M DDR SDRAM HY5DU28422T HY5DU28822T HY5DU281622T Revision 1.3 April 2001 This document is a general product description and is subject to change without notice. 289 HY5DU28422T/822T/1622T 128Mb x4, x8, x16 Double Data Rate SDRAM PRELIMINARY D E S C R IP T IO N
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HY5DU28422T
HY5DU28822T
HY5DU281622T
HY5DU28422T/822T/1622T
128Mb
728-b
Y5DU28422T/822T/1622T
128M-bit
urst 1081
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822AT
Abstract: No abstract text available
Text: 3rd 128M DDR SDRAM HY5DU28422AT HY5DU28822AT HY5DU281622AT Revision 1.3 April 2001 This docum ent is a general product description and is subject to change without notice. HY5DU28422AT/822AT/1622AT 128Mb x4, x8, x16 Double Data Rate SDRAM PRELIMINARY D ESC R IPTIO N
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HY5DU28422AT
HY5DU28822AT
HY5DU281622AT
HY5DU28422AT/822AT/1622AT
128Mb
HY5DU28422,
HY5DU28822
HY5DU281622
728-bit
822AT
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