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    HY57V28820 Search Results

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    HY57V28820 Price and Stock

    SK Hynix Inc HY57V28820AT-P

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    Bristol Electronics HY57V28820AT-P 1,098
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    SK Hynix Inc HY57V28820HCT-HI

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY57V28820HCT-HI 5 1
    • 1 $7.84
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    Quest Components HY57V28820HCT-HI 4
    • 1 $10.5
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    SK Hynix Inc HY57V28820HCT-P

    SDRAM, 16M x 8, 54 Pin, Plastic, TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY57V28820HCT-P 1,344
    • 1 $28.462
    • 10 $28.462
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    • 1000 $21.3465
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    HY57V28820 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY57V28820ALT-6 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-8 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-H Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-K Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-P Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820ALT-S Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-6 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-8 Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-H Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-I Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-K Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-P Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820AT-S Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820BLT Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820BT Hynix Semiconductor 4Banks x 4M x 8-Bits Synchronous DRAM Original PDF
    HY57V28820HC(L)T-6(I) Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V28820HC(L)T-6(I) Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V28820HCLT-6I Hynix Semiconductor 4banks x 4m x 8-Bits Synchronous Dram Original PDF
    HY57V28820HC(L)T-8(I) Hynix Semiconductor SDRAM - 128Mb Original PDF
    HY57V28820HC(L)T-8(I) Hynix Semiconductor SDRAM - 128Mb Original PDF

    HY57V28820 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4Mx8

    Abstract: HY57V28820AT-H
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range .HY57V28820A is organized as 4banks of


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin 4Mx8 HY57V28820AT-H

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin

    HY57V28820

    Abstract: HY57V28820HCT
    Text: HY57V28820HC L T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820HC(L)T is organized as 4banks of


    Original     		PDF HY57V28820HC 728bit 304x8. 400mil 54pin HY57V28820 HY57V28820HCT

    HY57V28820ALT-6

    Abstract: HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-H HY57V28820AT-K HY57V28820AT-P HY57V28820AT-S
    Text: HY57V28820A Revision History Revision 1.1 Dec. 2000 • • Eleminated -10 Bining product. Changed DC Characteristics-ll. - tCK to 15ns from min in Test condition - -K IDD1 to 120mA from 110mA - -K IDD4 CL2 to 120mA from 100mA. - -K IDD5 to 240mA from 220mA.


    Original     		PDF HY57V28820A 120mA 110mA 100mA. 240mA 220mA. 100mA HY57V28820A HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-H HY57V28820AT-K HY57V28820AT-P HY57V28820AT-S

    HY57V28820HCT-H

    Abstract: hynix HY57V28820HCT-H
    Text: HY57V28820HC L T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820HC(L)T is organized as 4banks of


    Original     		PDF HY57V28820HC 728bit 304x8. 400mil 54pin HY57V28820HCT-H hynix HY57V28820HCT-H

    hynix HY57V28820HCT-H

    Abstract: No abstract text available
    Text: HY57V28820HC L T 4Banks x 4M x 8bits Synchronous DRAM 0.1 : Hynix Change 0.2 : Burst read single write mode correction Rev. 0.2 / Aug. 2001 1 HY57V28820HC(L)T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory


    Original     		PDF HY57V28820HC 728bit 304x8. 400mil 54pin hynix HY57V28820HCT-H

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820HC L T-I 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. f HY57V28820HC(L)T is organized as


    Original     		PDF HY57V28820HC 728bit 304x8. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820HC 4Banks x 4M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V28820HC is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820HC is organized as 4banks of


    Original     		PDF HY57V28820HC HY57V28820HC 728bit 304x8. 400mil 54pin

    HY57V28820HCT-H

    Abstract: hynix HY57V28820HCT-H truth table for 1 to 4 decoder
    Text: HY57V28820A 0.1 : Hynix Change 0.2 : Burst read single write mode correction Rev. 0.1/Apr. 01 1 HY57V28820HC L T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory


    Original     		PDF HY57V28820A HY57V28820HC 728bit 304x8. 400mil 54pin HY57V28820HCT-H hynix HY57V28820HCT-H truth table for 1 to 4 decoder

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820B L T 4Banks x 4M x 8bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V28820B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820B(L)T is organized as 4banks of


    Original     		PDF HY57V28820B 728bit 304x8. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820HD L T 4Banks x 4M x 8bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V28820HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820HD(L)T is organized as 4banks of


    Original     		PDF HY57V28820HD 728bit 304x8. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820HC L T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820HC(L)T is organized as 4banks of


    Original     		PDF HY57V28820HC 728bit 304x8. 400mil 54pin

    HY57V28820AT-H

    Abstract: HY57V28820AT-K HY57V28820AT-8 HY57V28820AT-S HY57V28820ALT-6 HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-P HY57V28820AT
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hyundai HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin HY57V28820AT-H HY57V28820AT-K HY57V28820AT-8 HY57V28820AT-S HY57V28820ALT-6 HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-P HY57V28820AT

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820B L T 0.1 : Hynix Change Rev. 0.1/Nov. 01 1 HY57V28820B(L)T 4Banks x 4M x 8bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V28820B(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820B(L)T is organized as 4banks of


    Original     		PDF HY57V28820B 728bit 304x8. 400mil 54pin

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820HC L T-I 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. f HY57V28820HC(L)T is organized as


    Original     		PDF HY57V28820HC 728bit 304x8. 400mil 54pin

    HY57V28820AT-H

    Abstract: HY57V28820AT-K HY57V28820AT HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-P HY57V28820AT-S
    Text: HY57V28820A 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.


    Original     		PDF HY57V28820A HY57V28820A 728bit 304x8. 400mil 54pin HY57V28820AT-H HY57V28820AT-K HY57V28820AT HY57V28820ALT-6 HY57V28820ALT-H HY57V28820ALT-K HY57V28820AT-6 HY57V28820AT-8 HY57V28820AT-P HY57V28820AT-S

    PAGE08

    Abstract: No abstract text available
    Text: 128Mb Synchronous DRAM based on 4M x 4Bank x8 I/O Document Title 4Bank x 4M x 8bits Synchronous DRAM Revision History Revision No. History Draft Date 1.0 First Version Release Apr. 2005 1.1 Correct the CAPACITANCE Page08 values for 133MHz Product CI1 2.0(min) / 4.0(max) -> 2.5(min) / 3.5(max)


    Original     		PDF 128Mb Page08) 133MHz 128Mbit 16Mx8bit) HY57V28820E 400mil PAGE08

    hynix hy57v281620

    Abstract: HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C
    Text: UM10208 LPC2880/LPC2888 User manual Rev. 02 — 1 June 2007 User manual Document information Info Content Keywords LPC2880, LPC2888, LPC288x, ARM, ARM7, embedded, 32-bit, microcontroller, USB 2.0, USB HS Abstract LPC288x User manual UM10208 NXP Semiconductors


    Original     		PDF UM10208 LPC2880/LPC2888 LPC2880, LPC2888, LPC288x, 32-bit, LPC288x UM10208 hynix hy57v281620 HY57V561620 HY39S512800 LPC2888 K4S280832 LPC2800 dwa 108 a MARKING CODE 436c MT48LC4M32A2 hp 433C

    PC100

    Abstract: 16MX64 16MX8 8MX16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V


    OCR Scan     		PDF HY57V28420A HY57V28820A HY57V281620A HY57V28420HC HY57V28820HC HY57V281620HC HY57V28420HD HY57V28820HD PC100 16MX64 16MX8 8MX16

    DD 31 N 800 K

    Abstract: No abstract text available
    Text: HY57V28820HC L T 16Mx8-bit, 4K Ref, 4Banks„ 3.3V D E S C R IP T IO N The Hynix H Y 57 V 2 8 8 2 0 H C (L )T is a 1 34 ,21 7 ,728bit C M O S Synchronous D R A M , ideally suited for the main memory applications which require large memory density and high bandwidth, H Y 57 V 2 8 8 2 0 H C (L )T is organized as 4banks of


    OCR Scan     		PDF HY57V28820HC 16Mx8-bit, 728bit 304x8. 400mil 54pin DD 31 N 800 K

    HY57V28820ALT-6

    Abstract: No abstract text available
    Text: HY57V28820A L T 16MxS-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix HY57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applica­ tions which require large memory density and high bandwidth. HY57V28820A is organized as 4banks of 4,194,304x8.


    OCR Scan     		PDF HY57V28820A 16MxS-bit, 728bit 304x8. 128M-bit 16Mx8-bit, HY57V28820ALT-6

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820HD L T 16Mx8-bit, 4K Ref, 4Banks„ 3.3V D E S C R IP T IO N The Hynix HY57V28820HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820HD(L)T is organized as 4banks of


    OCR Scan     		PDF HY57V28820HD 16Mx8-bit, 728bit 304x8. 400mil

    UT20001

    Abstract: No abstract text available
    Text: HY57V28820A L T-I 16Mx8-bit, 4K Ref, 4Banks., 3.3V DESCRIPTION T h e H y n i x H Y 5 7 V 2 8 8 2 0 A is a 1 34, 2 1 7 , 7 2 8 bit C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t h e M o b i l e a p p l i c a t i o n s which require low power cons um pt ion


    OCR Scan     		PDF HY57V28820A 16Mx8-bit, 304x8. 400mil 54pin 128M-bit UT20001

    PC100

    Abstract: PC133 54-PIN HYM71V653201
    Text: 2 . PRODUCT QUICK REFERENCE X XX XX X X XX X X - X - X X£ HYNIX MEMORY PRODUCT Q U IC K REFERENCE HY XX I : Industrial Temperature E: Extended Temperature SPEED s 200MHz 183MHz 55 6 7 PRODUCT GROUP 57 : SDRAMs PROCESS & POWER SUPPLY : CMOS, 3.3V DENSTTY& REFRESH


    OCR Scan     		PDF 200MHz 183MHz 166MHz 143MHz PC133 125MHz PC100, 100MHz PC100 54-PIN HYM71V653201