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    Abstract: No abstract text available
    Text: HY57V28820HD L T 4Banks x 4M x 8bits Synchronous DRAM Preliminary DESCRIPTION The Hynix HY57V28820HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820HD(L)T is organized as 4banks of


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    HY57V28820HD 728bit 304x8. 400mil 54pin PDF

    Untitled

    Abstract: No abstract text available
    Text: HY57V28820HD L T 16Mx8-bit, 4K Ref, 4Banks„ 3.3V D E S C R IP T IO N The Hynix HY57V28820HD(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V28820HD(L)T is organized as 4banks of


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    HY57V28820HD 16Mx8-bit, 728bit 304x8. 400mil PDF

    PC100

    Abstract: 16MX64 16MX8 8MX16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE SDRAM Part Numbering 11 SDRAM Module Part Numbering 13 3. DATA SHEETS SDRAM 128M -bft SPRAM HY57V28420A L T 32Mx4-bit, 4K Réf., 4Banks, 3.3V 25 HY57V28820A(L)T 16Mx8-bit, 4K Réf., 4Banks, 3.3V


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    HY57V28420A HY57V28820A HY57V281620A HY57V28420HC HY57V28820HC HY57V281620HC HY57V28420HD HY57V28820HD PC100 16MX64 16MX8 8MX16 PDF