Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HY51V18 Search Results

    SF Impression Pixel

    HY51V18 Price and Stock

    SK Hynix Inc HY51V18164CJC-60

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY51V18164CJC-60 297
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SK Hynix Inc HY51V18164CJC-60DR

    IC,DRAM,EDO,1MX16,CMOS,SOJ,42PIN,PLASTIC (Also Known As: HY51V18164CJC-60)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY51V18164CJC-60DR 1,000
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.8625
    		Buy Now
    HY51V18164CJC-60DR 1,000
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.8625
    		Buy Now

    HYUN HY51V18164CTC60DR

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY51V18164CTC60DR 1,100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    HYN HY51V18164CTC60

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY51V18164CTC60 530
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    HY51V18 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY51V18160C NEC 1Mx16, Fast Page mode Original PDF
    HY51V18163HGJ Hynix Semiconductor 1M x 16-Bit EDO DRAM Original PDF
    HY51V18163HGJ-5 Hynix Semiconductor 1M x 16-Bit EDO DRAM Original PDF
    HY51V18163HGJ-6 Hynix Semiconductor 1M x 16-Bit EDO DRAM Original PDF
    HY51V18163HGJ-7 Hynix Semiconductor 1M x 16-Bit EDO DRAM Original PDF
    HY51V18163HGLJ-5 Hynix Semiconductor Dynamic RAM organized 1,048,576 words x 16-Bit, 50ns, low power Original PDF
    HY51V18163HGLJ-6 Hynix Semiconductor Dynamic RAM organized 1,048,576 words x 16-Bit, 60ns, low power Original PDF
    HY51V18163HGLJ-7 Hynix Semiconductor Dynamic RAM organized 1,048,576 words x 16-Bit, 70ns, low power Original PDF
    HY51V18163HGLT-5 Hynix Semiconductor Dynamic RAM organized 1,048,576 words x 16-Bit, 50ns, low power Original PDF
    HY51V18163HGLT-6 Hynix Semiconductor Dynamic RAM organized 1,048,576 words x 16-Bit, 60ns, low power Original PDF
    HY51V18163HGLT-7 Hynix Semiconductor Dynamic RAM organized 1,048,576 words x 16-Bit, 70ns, low power Original PDF
    HY51V18163HGT Hynix Semiconductor 1M x 16-Bit EDO DRAM Original PDF
    HY51V18163HGT-5 Hynix Semiconductor 1M x 16-Bit EDO DRAM Original PDF
    HY51V18163HGT-6 Hynix Semiconductor 1M x 16-Bit EDO DRAM Original PDF
    HY51V18163HGT-7 Hynix Semiconductor 1M x 16-Bit EDO DRAM Original PDF

    HY51V18 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HY51V16160BJC

    Abstract: No abstract text available
    Text: HY51V18160B,HY51V16160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		HY51V18160B HY51V16160B 1Mx16, 16-bit 1Mx16 HY51V16160BJC PDF

    HY51V18164B

    Abstract: HY51V18164
    Text: HYM5V64124A Q-Series Unbuffered SO DIMM 1Mx64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM module consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOPII and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy


    Original     		HYM5V64124A 1Mx64-bit 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG DQ0-DQ63) 1CE16-10-APR96 144pin HY51V18164 PDF

    HY51V18160C

    Abstract: No abstract text available
    Text: HY51V18160C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		HY51V18160C HY51V16160C 1Mx16, 16-bit 1Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V18164C,HY51V16164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		HY51V18164C HY51V16164C 1Mx16, 16-bit 1Mx16 PDF

    HY51V18164

    Abstract: hy51v18164c
    Text: HY51V18164C,HY51V16164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		HY51V18164C HY51V16164C 1Mx16, 16-bit 1Mx16 10/Sep HY51V18164 PDF

    HY51V18160C

    Abstract: HY51V16160C
    Text: HY51V18160C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		HY51V18160C HY51V16160C 1Mx16, 16-bit 1Mx16 HY51V16160C PDF

    HY51V18160C

    Abstract: No abstract text available
    Text: HY51V18160C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		HY51V18160C HY51V16160C 1Mx16, 16-bit 1Mx16 10/Sep PDF

    HY51V18164C

    Abstract: No abstract text available
    Text: HY51V18164C,HY51V16164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    Original     		HY51V18164C HY51V16164C 1Mx16, 16-bit 1Mx16 PDF

    Untitled

    Abstract: No abstract text available
    Text: • • H Y U N D A I * HY51V18164B,HY51V16164B > 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process


    OCR Scan     		HY51V18164B HY51V16164B 1Mx16, 16-bit A0-A11) DQ0-DQ15) PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y M 5 V 7 2 A 1 2 0 A 1M X X - S e r ie s 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A120A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of two HY51V4400B in 20/26 pin SOJ or TSOP-II, four HY51V18160B 42/42 pin SOJ or 44/50 pin TSOP-li and two 16-bit BiCMOS line driver


    OCR Scan     		72-bit HYM5V72A120A HY51V4400B HY51V18160B 16-bit HYM5V72A120AXG/ASLXG/ATXG/ASLTXG 1EC07-10-AUG95 PDF

    HY51V16160C

    Abstract: No abstract text available
    Text: “H Y U N D A I HY51V18160C, HY51V16160C 1M X 16bit CMOS DRAM PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high


    OCR Scan     		HY51V18160C, HY51V16160C HY51V18160CJC HY51V18160CSLJC HY51V18160CTC HY51V18160CSLTC HY51V16160CJC HY51V16160CSLJC HY51V16160CTC HY51V16160CSLTC HY51V16160C PDF

    HY51V18164B

    Abstract: No abstract text available
    Text: «HYUNDAI HY51V18164B Series 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		HY51V18164B 16-bit 16-bit. 04711-20Cf) 1AD60-10-MAY95 HY51V18164BJC PDF

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI HY51V18t60C,HY51V16160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		HY51V18t60C HY51V16160C 1Mx16, 16-bit A0-A11) DQ0-DQ15) PDF

    HY51V18164B

    Abstract: No abstract text available
    Text: H Y 51V 18164BSeries •HYUNDAI 1M X 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V18164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18164B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		16-bit HY51V18164B 16-bit. 470C11 10X168} 4b750Ã 1AD60-10-MAY95 PDF

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI U HYM5V36223A X-S ries 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36223A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 42/50 pin TSOPII and two HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy


    OCR Scan     		HYM5V36223A 36-bit HY51V18160B HY51V4403B 22\iF HYM5V36223ATX/ASLTX HYM5V36223ATXG/ASLTXG DQ0-DQ35) PDF

    HY51V181648

    Abstract: No abstract text available
    Text: ‘ HYUNDAI HYM5V64224A X-Series 2M x 64-bit CMOS ORAM MODULE DESCRIPTION The HYM5V64224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY51V181648 in 42/42 pin SOJ and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22nF


    OCR Scan     		HYM5V64224A 64-bit HY51V181648 16-bit HYM5V64224AXG/ASLXG/ATXG/ASLTXG 1ED01-10-AUG95 DQ0-DQ63) PDF

    HYM5V64414

    Abstract: No abstract text available
    Text: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR


    OCR Scan     		HYM5V64104AR/ATR HYM5V64124AR/ATR HYM5V72A124AR/ATR HYM5V64204AR/ATR HYM5V64214AF/ATF HYM5V64224AR/ATR I6164BJ/BT HY51V18164BJ/BT HY51V4404BJ/BT HYM5V64414 PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM5V64124A Q-Series SO DIMM 1M _ X 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V64124A is a 1M x 64-bit EDO mode CMOS DRAM m odule consisting of four HY51V18164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 144 Zig Zag Dual pin glass-epoxy printed circuit


    OCR Scan     		HYM5V64124A 64-bit HY51V18164B HYM5V64124AQG/ATQG/ASLQG/ASLTQG 70Capacitance DQ0-DQ63) 1CE16-10-APR96 PDF

    1OC05

    Abstract: No abstract text available
    Text: H Y U N D A I H Y M 5 V 3 2 1 2 0 A IM I 32-bit CMOS X -S e r íe s DRAM MODULE DESCRIPTION The HYM5V32120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor


    OCR Scan     		32-bit HYM5V32120A HY51V18160B 22fiF HYM5V32120ATXG/ASLTXG DQ0-DQ31) 1DC05-10-AUG95 HYM5V32120A/ASL 1OC05 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY51V18165B Series •HYUNDAI 1M X 16-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V18165B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V118165B utilized Hyundai's C M O S silicon gate process technology as well as advenced circuit techniques


    OCR Scan     		HY51V18165B 16-bit 16-bit. HY51V118165B 1AD63-00-MAY95 HY51V18165BJC HY51V18165BTC PDF

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		18160B 16-bit HY51V18160B 16-bit. 4b75Qfl8 1AD56-10-MAY9S HY51V18160BJC PDF

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D A I * HY51V18160B,HY51 V I6160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		HY51V18160B I6160B 1Mx16, 16-bit DQO-OQ15) PDF

    HY51V18164B

    Abstract: HY51V18164
    Text: • 'H Y U N D A I HY51V18164B, HY51V16164B 1M x 16bit CMOS DRAM with Extended Data Out DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended Data Out mode


    OCR Scan     		HY51V18164B, HY51V16164B 16bit HY51V18164BJC HY51V18164BSLJC HY51V18164BTC HY51V18164BSLTC HY51V16164BJC HY51V16164BSLJC HY51V16164BTC HY51V18164B HY51V18164 PDF

    UG-95

    Abstract: No abstract text available
    Text: “H Y U N D A I HYM5V36123A X-Sgnqs , U n U M I 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36123A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 42/42 pin SOJ or 44/50 pin TSOPII and one HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy


    OCR Scan     		HYM5V36123A 36-bit HY51V18160B HY51V4403B 22jiF HYM5V36123ATX/ASLTX HYM5V36123ATXG/ASLTXG DQ0-DQ35) UG-95 PDF