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    HY5116160 Search Results

    HY5116160 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY5116160BJC Hynix Semiconductor 1Mx16, Fast Page mode Original PDF
    HY5116160C Hyundai Fast Page mode DRAM 1Mx16 Original PDF

    HY5116160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY5118160

    Abstract: HY5118160BTC HY5118160B
    Text: HY5118160B,HY5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5118160B HY5116160B 1Mx16, 16-bit 1Mx16 HY5118160 HY5118160BTC

    HY5118160C

    Abstract: HY5116160C HY5118160CJC
    Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5118160C HY5116160C 1Mx16, 16-bit 1Mx16 HY5116160C HY5118160CJC

    HY5116160C

    Abstract: HY5118160C
    Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5118160C HY5116160C 1Mx16, 16-bit 1Mx16 10/Sep HY5116160C

    HY5118160C

    Abstract: No abstract text available
    Text: HY5118160C,HY5116160C 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    Original     		PDF HY5118160C HY5116160C 1Mx16, 16-bit 1Mx16

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM564200 X-Series 2M X 64-bit CMOS ORAM MODULE D E S C R IP T IO N The HYM564200 is a 2M x 64-bit Fast page m ode CMOS DRAM m odule consisting o f eight HY5116160 in 42/42 pin SOJ, tw o 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board.


    OCR Scan     		PDF HYM564200 64-bit HY5116160 16-bit HYM564200XG/SLXG A0-A11 RAS0-RA53) DQ0-DQ63)

    rau2

    Abstract: 1A011
    Text: HY5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116160 16-bit 16-bit. Y5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC rau2 1A011

    HY5118160

    Abstract: HY5118160C
    Text: » M Y U H D A I * HY5118160C,HY5116160C > 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5118160C HY5116160C 1Mx16, 16-bit A0-A11) DQ0-DQ15) HY5118160

    HY5118160BTC

    Abstract: hy5118160b
    Text: "HYUNDAI HY5118160B, HY5116160B _ DESCRIPTION 1M x 16bit CMOS DRAM ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high


    OCR Scan     		PDF HY5118160B, HY5116160B 16bit HY5118160BJC HY5118160BSLJC HY5118160BTC HY5118160BSLTC HY5116160BJC HY5116160BSLJC HY5116160BTC hy5118160b

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY5116160 Series 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116160 16-bit 16-bit. HY5116160 1AD11-10-MAY94 HY5116160JC HY5116160SLJC

    wj da11 pin

    Abstract: 22TCW
    Text: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116160B 16-bit. 1AD53-10-MAY95 HY5116160BJC HY5116160BSLJC HY5116160BTC wj da11 pin 22TCW

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM564100 X-Series IM X 64-bit CMOS DRAM MODULE DESCRIPTION The HYM564100 is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of four HY5116160 in 42/42pin SOJ, two 16-bit and one 4-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board. 0.22p.F


    OCR Scan     		PDF HYM564100 64-bit HY5116160 42/42pin 16-bit HYM564100XG/SLXG A0-A11 DQ0-DQ63)

    Untitled

    Abstract: No abstract text available
    Text: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116160 16-bit. HY5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC HY5116160TC

    HY5116160

    Abstract: No abstract text available
    Text: H Y 5 1 1 6 1 6 0 «HYUNDAI S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116160 16-bit. 1AD11-10-MAY94 HY5116160JC HY5116160SLJC HY5116160TC

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 1 1 6 1 6 0 B Series 1M x 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116160B 16-bit. HY5116160B 404fl0aea 1AD53-10-MAY95 HY5116160BJC HY5116160BSLJC

    Untitled

    Abstract: No abstract text available
    Text: HY5116800 Series • H Y UN D A I 2M x 8-bit CMOS DRAM DESCRIPTION The HY5116800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116800 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116800 HY5116800 1AD07-10-MAV94 0Q0313& HY5116800JC HY5116800SLJC HY5116800TC

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 8 1 6 0 B ,H Y 5 1 1 6 1 6 0 B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF 1Mx16, 16-bit 1Mx16

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B

    Untitled

    Abstract: No abstract text available
    Text: HY5116800 Series •HYUNDAI 2M x 8-bit CMOS DRAM DESCRIPTION The HY5116800 is the new generation and fast dynamic RAM organized 2,097,152 x 8-bit. The HY5116800 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116800 1AD07-10-MAY94 HY5116800JC HY5116800SLJC

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    TAA 981

    Abstract: HY5118160 HY5118160JC
    Text: HY5118160 Series “HYUNDAI IM X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5118160 16-bit 16-bit. 1AD15-10-MAY94 HY5118160JC TAA 981

    r4kf

    Abstract: HY53C464LS fr4k HY53C256LS HY531000J
    Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S


    OCR Scan     		PDF 256Kx 64Kx4) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF r4kf fr4k HY531000J

    AUO-PL321.60

    Abstract: HY51V18164B HY514264 HY514260
    Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP


    OCR Scan     		PDF HY531000AS HY531000ALS HY531000AJ HY531000ALJ HY534256AS HY534256ALS HY534256AJ HY534256ALJ HY512260JC HY512260LJC AUO-PL321.60 HY51V18164B HY514264 HY514260

    HY5118160

    Abstract: No abstract text available
    Text: H Y 5 1 1 8 1 6 0 ‘H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5118160 16-bit. HY5118160 1AD15-10-MAY94 4b75Dflfl 322fi HY5118160JC

    HY5118160

    Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
    Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF 256K-bits HY53C256. HY53C464 HY531000. DB101-20-MAY94 HY5118160 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit