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    HY23 Price and Stock

    Schneider Electric NSYCCOHY230VID

    HYGROSTAT HS300
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    DigiKey NSYCCOHY230VID Bulk 1
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    IDEC Corporation LF1B-NE4P-2SHY2-3M

    LED BAR 830MM IP65 YELLOW
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    Mouser Electronics LF1B-NE4P-2SHY2-3M
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    Master Electronics LF1B-NE4P-2SHY2-3M
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    Sager LF1B-NE4P-2SHY2-3M 1
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    IDEC Corporation LF1B-NF3P-2SHY2-3M

    LED BAR 1080MM IP65 YELLOW
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    DigiKey LF1B-NF3P-2SHY2-3M Bulk 1
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    Mouser Electronics LF1B-NF3P-2SHY2-3M 3
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    RS LF1B-NF3P-2SHY2-3M Bulk 1
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    Master Electronics LF1B-NF3P-2SHY2-3M
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    Sager LF1B-NF3P-2SHY2-3M 1
    • 1 $379.55
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    IDEC Corporation LF1B-NA4P-2SHY2-3M

    LED BAR 134MM IP65 YELLOW
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    Mouser Electronics LF1B-NA4P-2SHY2-3M
    • 1 $118.16
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    Newark LF1B-NA4P-2SHY2-3M Bulk 1
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    RS LF1B-NA4P-2SHY2-3M Bulk 1
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    Master Electronics LF1B-NA4P-2SHY2-3M
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    Sager LF1B-NA4P-2SHY2-3M 1
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    IDEC Corporation LF1B-NC4P-2SHY2-3M

    LED BAR 330MM IP65 YELLOW
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    DigiKey LF1B-NC4P-2SHY2-3M Bulk 1
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    Mouser Electronics LF1B-NC4P-2SHY2-3M 5
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    Newark LF1B-NC4P-2SHY2-3M Bulk 1
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    RS LF1B-NC4P-2SHY2-3M Bulk 27 1
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    Master Electronics LF1B-NC4P-2SHY2-3M
    • 1 $155.34
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    Sager LF1B-NC4P-2SHY2-3M 1
    • 1 $161.51
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    Find more HY23 price and stock on Findchips.com

    HY23 Datasheets (106)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HY23C04000D-100 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 32 DIP Original PDF
    HY23C04000D-120 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 32 DIP Original PDF
    HY23C04000D-70 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 32 DIP Original PDF
    HY23C04000S-100 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 32 SOP Original PDF
    HY23C04000S-120 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 32 SOP Original PDF
    HY23C04000S-70 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 32 SOP Original PDF
    HY23C04200D-100 Hynix Semiconductor 256K X16/512K X8 BIT CMOS MASK ROM Original PDF
    HY23C04200D-120 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 40 DIP Original PDF
    HY23C04200D-70 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 40 DIP Original PDF
    HY23C04200S-10 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 40 SOP Original PDF
    HY23C04200S-120 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 40 SOP Original PDF
    HY23C04200S-70 Hynix Semiconductor Mask ROM, 4Mbit Density, 5V Supply, 40 SOP Original PDF
    HY23C08000D Hynix Semiconductor 1Mx8 Bit CMOS MASK ROM Original PDF
    HY23C08000S Hynix Semiconductor 1MX8 Bit CMOS MASK ROM Original PDF
    HY23C08200D-100 Hynix Semiconductor Mask ROM, 8Mbit Density, 5V Supply, 42 DIP Original PDF
    HY23C08200D-120 Hynix Semiconductor Mask ROM, 8Mbit Density, 5V Supply, 42 DIP Original PDF
    HY23C08200S-100 Hynix Semiconductor Mask ROM, 8Mbit Density, 5V Supply, 44 SOP Original PDF
    HY23C08200S-120 Hynix Semiconductor Mask ROM, 8Mbit Density, 5V Supply, 44 SOP Original PDF
    HY23C08250D-100 Hynix Semiconductor Mask ROM, 8Mbit Density, 5V Supply, 42 DIP Original PDF
    HY23C08250D-120 Hynix Semiconductor Mask ROM, 8Mbit Density, 5V Supply, 42 DIP Original PDF

    HY23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    16202

    Abstract: HY23V16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP
    Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		1MX16/2MX8 HY23V16202 HY23V16202 42pin 100/120ns 44TSOP-II 16202 HY23V16202D HY23V16202S HY23V16202T 48TSOP PDF

    LL-304YD2E

    Abstract: LL-304YD2G
    Text: LUCKY LIGHT LL-304YD2G DATA SHEET QC: Part No. ENG: LL-304YD2G Spec No. Prepared By: S/N-HY23 Page 1 of 4 LUCKY LIGHT Features ♦ ♦ ♦ ♦ High intensity Normal 3mm diameter package General purpose leads Reliable and rugged Package Dimension: Part NO.


    Original     		LL-304YD2G S/N-HY23 LL-304YD2E LL-304YD2E LL-304YD2G PDF

    Untitled

    Abstract: No abstract text available
    Text: 8MX16BIT CMOS MASK ROM HY23V28151 Description The HY23V28151 high performance read only memory is organized either as 8,388,608 x16 bit word mode and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of


    Original     		HY23V28151 8MX16BIT HY23V28151 100/120ns. 44SOP 100pF 100ns PDF

    Untitled

    Abstract: No abstract text available
    Text: 4MX16/8MX8 BIT CMOS MASK ROM HY23V64200 Description The HY23V64200 high per formance read onl y m em or y i s or gani z ed ei th er a s 8,38 8,608 x 8bi t byte mode or as 4,194,304 x16 bit(word mode) and has an access time of 100/120ns. It needs no external


    Original     		4MX16/8MX8 HY23V64200 HY23V64200 100/120ns. 44SOP, 44TSOP-II 48TSOP-I 44TSOP-II PDF

    4MX16

    Abstract: HY23V64100 mask rom 4MX16-Bit
    Text: 4MX16 BIT CMOS MASK ROM HY23V64100 Description The HY23V64100 high performance read only memory is organized as 4,194,304 x16 bit word mode and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of its


    Original     		4MX16 HY23V64100 HY23V64100 100/120ns. 42DIP 100/120ns 100pF mask rom 4MX16-Bit PDF

    500MIL

    Abstract: 28550
    Text: 512K X 16/1M X 8 BIT CMOS MASK ROM HY23V08200 Description The HY23V08200 high performance read only memory is organized either as 1,048,576 x 8 bit byte mode or as 524,288 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		16/1M HY23V08200 HY23V08200 42pin 100/120ns 44SOP 42DIP 500MIL 28550 PDF

    4MX16

    Abstract: mask rom
    Text: 4MX16 BIT CMOS MASK ROM HY23C64100 Description The HY23C64100 high performance read only memory is organized as 4,194,304 x16 bit word mode and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of its


    Original     		4MX16 HY23C64100 HY23C64100 100/120ns. 42DIP 100/120ns 100pF mask rom PDF

    Untitled

    Abstract: No abstract text available
    Text: 512K X 16/1M X 8 BIT CMOS MASK ROM HY23C08200 Description The HY23C08200 high performance read only memory is organized either as 1,048,576 x 8 bit byte mode or as 524,288 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		16/1M HY23C08200 HY23C08200 42pin 100/120ns 44SOP 42DIP PDF

    32DIP

    Abstract: HY23C08000D HY23C08000S
    Text: 1MX8 BIT CMOS MASK ROM HY23C08000 Description The HY23C08000 high performance read only memory is organized 1,048,576 x 8 bit byte mode and has an access time of 70/100/120ns. The low power feature allows the battery operation. The large size of 8M bit memory density is ideal for character generator, data or program memory in micro-processor


    Original     		HY23C08000 HY23C08000 70/100/120ns. 32pin 70/100/120ns 32SOP 730MAX 32DIP 32DIP HY23C08000D HY23C08000S PDF

    Untitled

    Abstract: No abstract text available
    Text: preliminary HY23V32200 2MX16/4MX8 BIT CMOS MASK ROM Description The HY23V32200 high per formance read onl y m em or y i s or gani z ed ei th er a s 4,19 4,304 x 8bi t byte mode or as 2,097,152 x16 bit(word mode) and has an access time of 70/100/120ns. It needs no external


    Original     		HY23V32200 2MX16/4MX8 HY23V32200 70/100/120ns. 44SOP, 44TSOP-II 48TSOP-I PDF

    mask rom 4M

    Abstract: No abstract text available
    Text: 512KX8 BIT CMOS MASK ROM HY23W04000 Description The HY23W04000 high performance read only memory is organized 524,288 x 8 bit byte mode and has an access time of 120/150ns. The low power feature allows the battery operation. The large size of 4M bit memory density is ideal for charactergenerator, data or program memory in micro-processor


    Original     		HY23W04000 512KX8 HY23W04000 120/150ns. 32pin 120/150ns HY23W04000D mask rom 4M PDF

    Untitled

    Abstract: No abstract text available
    Text: 8MX16/16MX8 BIT CMOS MASK ROM HY23V28201 Description The HY23V28201 high performance read only memory is or ganized either as 16,777,216x8bit byte mode or as 8,388,608 x16 bit(word mode) and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of its asynchronous operation. It is designed to be suitable for


    Original     		HY23V28201 8MX16/16MX8 HY23V28201 216x8bit 100/120ns. 48TSOP-I 100/120ns 48TSOP-I PDF

    Untitled

    Abstract: No abstract text available
    Text: 256K X16/512K X8 BIT CMOS MASK ROM HY23C04200 Description The HY23C04200 high performance read only memory is organized either as 524,288 x 8 bit byte mode or as 262,144 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery operation. The large size of 4M bit memory density is ideal for


    Original     		HY23C04200 X16/512K HY23C04200 70/100/120ns 16bits. 40pin 70/100/120ns 40DIP PDF

    Untitled

    Abstract: No abstract text available
    Text: preliminary HY23C08200 512K X 16/1M X 8 BIT CMOS MASK ROM Description The HY23C08200 high performance read only memory is organized either as 1,048,576 x 8 bit byte mode or as 524,288 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		HY23C08200 16/1M HY23C08200 42pin 100/120ns 42DIP PDF

    2MX16

    Abstract: No abstract text available
    Text: 2MX16 BIT CMOS MASK ROM HY23V32100 Description The HY23V32100 high performance read only memory is organized as 2,097,152 x16 bit word mode and has an access time of 70/100/120ns. It needs no external control clock to assure simple operation, because of its


    Original     		2MX16 HY23V32100 HY23V32100 70/100/120ns. 42DIP 70/100/120ns 100pF PDF

    44SOP

    Abstract: No abstract text available
    Text: preliminary HY23V28100 8MX16BIT CMOS MASK ROM Description The HY23V28100 high performance read only memory is organized either as 8,388,608 x16 bit word mode and has an access time of 100/120ns. It needs no external control clock to assure simple operation, because of


    Original     		HY23V28100 8MX16BIT HY23V28100 100/120ns. 44SOP 100/120ns 35mise 100pF PDF

    Untitled

    Abstract: No abstract text available
    Text: 1MX16/2MX8 BIT CMOS MASK ROM HY23C16202 Description The HY23C16202 high performance read only memory is organized either as 2,097,152 x 8 bit byte mode or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery


    Original     		1MX16/2MX8 HY23C16202 HY23C16202 42pin 100/120ns 44TSOP-II PDF

    Untitled

    Abstract: No abstract text available
    Text: preliminary HY23V08250 512K X16/1M X 8 BIT CMOS MASK ROM Description The HY23V08250 high per for mance r ead onl y m e m or y i s or gani z ed ei th er a s 1,04 8,576 x 8 b i t b y te m o de or as 524, 288 x 16 bi t( w or d m o d e ) f o l l o w e d b y B H E m o d e s e l e c t . T h e l o w p o w e r


    Original     		HY23V08250 X16/1M HY23V08250 42pin 100/120ns 30/50ns 42DIP PDF

    Untitled

    Abstract: No abstract text available
    Text: HY234000 Series -H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x8bit. It is fabricated using HYUNDAI’S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are i n ­


    OCR Scan     		HY234000 120ns 525mil HY234000P-XXX HY234000G-XXX PDF

    HY2316000

    Abstract: No abstract text available
    Text: HY2316000 Series ••HYUNDAI 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316000 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS


    OCR Scan     		HY2316000 16-bit 16Mbit 16bit speed-120ns 600mil 2-g00MÂ PDF

    Untitled

    Abstract: No abstract text available
    Text: HY234000 Series “H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x Sbit. It ¡sfabricated using HYUNDAI'S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are TTL


    OCR Scan     		HY234000 120ns 525mil HY234000P-XXX HY234000G-XXX PDF

    E5EX

    Abstract: HY2316000
    Text: HYUNDAI HY2316000 Series 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316000 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit {Byte mode or as 1,048,576 x 16bit Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS


    OCR Scan     		HY2316000 16-bit 16Mbit 16bit 120ns Y2316000 600mil E5EX PDF

    Untitled

    Abstract: No abstract text available
    Text: • HYUNDAI HY2316050 Series 2M X 8-bit / 1M X 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY2316050 is a 16Mbit mask-programmable ROM organized either as 2,097,152 x 8bit Byte mode or as 1,048,576 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS


    OCR Scan     		HY2316050 16-bit 16Mbit 16bit 120ns 16bit 600miJ PDF

    Untitled

    Abstract: No abstract text available
    Text: •H Y U N D A I HY234100 Series 512KX 8-b¡t/256KX 16-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234100 is a 4Mbit mask-programmable ROM organized either as 524,288 x 8bit Byte mode or as 262,144 x 16bit (Word mode) depending on BHE level. It is fabricated using HYUNDAI'S advanced CMOS process


    OCR Scan     		HY234100 512KX t/256KX 16-bit 16bit 120ns 600mil 525mil PDF