mode 5 IFF
Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
Text: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1011-300
429-HVVi
EG-01-DS02A
EG-01-DS02A5
mode 5 IFF
diode gp 429
hvvi
"RF MOSFET" 300W
1030mhz
hvv1011
1090mhz
RF 1090MHz
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UHF TRANSISTOR
Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0405-175
429-HVVi
EG-01-DS10B
05/XX/09
UHF TRANSISTOR
J152-ND
J151-ND
RF MOSFET CLASS AB
Coaxicom
transistor SMD g 28
100B100JP500X
RC1206JR-07100KL
smd transistor 259
4404 mosfet
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Cycle10s
Abstract: mode 5 IFF L-band RF MOSFET transistor AZ 1
Text: The innovative Semiconductor Company! HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10 s Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1012-250
EG-01-DS09A
429-HVVi
Cycle10s
mode 5 IFF
L-band RF MOSFET
transistor AZ 1
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500W TRANSISTOR
Abstract: hvvi
Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-500L
on/18us
HVV1011-500L
EG-01-PO17X1
500W TRANSISTOR
hvvi
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HVV0912-800
Abstract: SEMICONDUCTORS INC
Text: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor
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HVV0912-800
HVV0912-800
429-HVVi
EG-01-POXXX1
SEMICONDUCTORS INC
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MIL-STD-750D
Abstract: L-Band 1200-1400 MHz 8 HJC Radar F-1200 HVV1214-25 HVVi Semiconductors
Text: HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty DESCRIPTION PACKAGE The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from
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HVV1214-025
HVV1214-25
MIL-STD-750D,
MIL-STD-750D
L-Band 1200-1400 MHz
8 HJC
Radar
F-1200
HVVi Semiconductors
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PDF
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SM200
Abstract: Radar HV400 Radar Transponder HVV1011-300 HVV1214-100
Text: The innovative Semiconductor Company! Technology Overview TM A NEW APPROACH TO SILICON RF POWER TRANSISTOR DESIGN Today’s radar and avionics applications demand RF power amplifiers that can deliver higher power density in smaller packages and with greater reliability. But, the silicon technologies currently used in most power transistors
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Radar
Abstract: diode gp 429 HV400
Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty
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HVV1012-100
HVV1012-100
1025-1150Avionics
1025-1150MHz,
429-HVVi
Radar
diode gp 429
HV400
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PDF
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diode gp 429
Abstract: HVV1011-1000L interrogator transistor 1000W
Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, LTDC 6.4% For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor
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Original
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HVV1011-1000L
on/18us
HVV1011-1000L
on/18
429-HVVi
EG-01-POXXXX
07/XX/09
diode gp 429
interrogator
transistor 1000W
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PDF
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AIRBORNE DME
Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Text: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with
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HVV1012-550
1025MHz
1150MHz.
AIRBORNE DME
transistor SMD 12W MOSFET
transistor SMD 12W
smd transistor code 12w
RF Transistor S10-12
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PDF
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ERJ8GEYJ100V
Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
Text: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V
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HVV1012-250
429-HVVi
EG-01-DS09B
ERJ8GEYJ100V
Johanson Technology
C1206C102K1RACTU
C1206C103K1RACTU
445-4109-2-ND
478-2666-1-ND
251R15S
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PDF
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diode gp 429
Abstract: HV400
Text: HVV1012-100 HVV1012-100 L-Band Avionics Pulsed Power Transistor HVV1012-100 The innovative Semiconductor Company! L-Band Avionics MHz, Pulsed10µs Power Transistor 1025-1150 Pulse, 1% Duty L-Band Avionics Pulsed Power Transistor HVV1012-100 1025-1150 MHz, 10µs Pulse, 1% Duty
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HVV1012-100
HVV1012-100
1025-1150Avionics
1025-1150MHz,
429-HVVi
diode gp 429
HV400
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1030mhz
Abstract: 2TD12 HV400 SM200 1090mhz
Text: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed
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HVV1011-040
HVV1214-075
HVV1011-040
1030-1090MHz,
HVV1011-035
1030mhz
2TD12
HV400
SM200
1090mhz
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PDF
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L-Band 1200-1400 MHz
Abstract: 4884 MOSFET HVV1214-100 radar circuit L-band RF MOSFET SEMICONDUCTORS INC 1200-1400 429 transistor 4884+MOSFET
Text: The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty For Ground Based Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1214-100
EG-01-DS06A
429-HVVi
L-Band 1200-1400 MHz
4884 MOSFET
radar circuit
L-band RF MOSFET
SEMICONDUCTORS INC
1200-1400
429 transistor
4884+MOSFET
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j152
Abstract: RF MOSFET CLASS AB L-Band 1200-1400 MHz 1030mhz HVV1214-100 5919CC-TB-7
Text: The innovative Semiconductor Company! HVV1214-100 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200 s Pulse, 10% Duty Cycle For Ground Based Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV1214-100
429-HVVi
EG-01-DS06B
j152
RF MOSFET CLASS AB
L-Band 1200-1400 MHz
1030mhz
5919CC-TB-7
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PDF
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1030-1090MHz
Abstract: 4884 SM200 DS01A
Text: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-035
1030-1090MHz,
HVV1011-035
429-HVVi
EG-01-DS01A
1030-1090MHz
4884
SM200
DS01A
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PDF
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HVVi Semiconductors
Abstract: SM200
Text: HVV1214-025 L-Band High Power Pulsed Transistor 1200-1400MHz, 200µs, 10% Duty For Ground Based Radar Applications DESCRIPTION PACKAGE The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications
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HVV1214-025
1200-1400MHz,
HVV1214-025
429-HVVi
EG-01-DS05A
HVVi Semiconductors
SM200
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PDF
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capacitor 10uF/63V
Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
Text: The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness UHF Pulsed Power Transistor 400-500 MHz, 300 s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0405-175
EG-01-DS10A
429-HVVi
capacitor 10uF/63V
ds10a
capacitor 100uF 50V
capacitor 1206 63V
hex head screws
10uf 63v capacitor
AB-45
banana socket datasheet
diode gp 429
SMD 1206 RESISTOR 100 OHMS
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PDF
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transistor s 1014
Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
Text: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor
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HVV1214-025
HVV1214-075
HVV1214-025
EG-01-PO05X5
429-HVVi
EG-01-PO05X1
transistor s 1014
L-Band 1200-1400 MHz
Radar
radar circuit component
x band radar
HV400
SM200
|
PDF
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capacitor 10uF/63V
Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
Text: The innovative Semiconductor Company! HVV0912-150 HIGH VOLTAGE, HIGH RUGGEDNESS L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V
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HVV0912-150
429-HVVi
EG-01-DS11B
capacitor 10uF/63V
capacitor 220uF/63V
J152
100 pf, ATC Chip Capacitor
pF CAPACITOR 100v
100b*500x
10uf 63v capacitor
capacitor 1206 63V
ID Innovations
resistor smd 1206 102
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PDF
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L-Band 1200-1400 MHz
Abstract: diode gp 429 Radar x band radar HV400
Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor
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HVV1214-075
HVV1214-075MHz,
HVV1214-075
429-HVVi
EG-01-PO08X4
L-Band 1200-1400 MHz
diode gp 429
Radar
x band radar
HV400
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PDF
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HVV1011-600
Abstract: hvvi 1090MHZ
Text: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor
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HVV1011-600
1030-1090MHz
HVV1011-600
HV800
MIL-STD-883,
EG-01-PO15X4
hvvi
1090MHZ
|
PDF
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HVV1011-1000L
Abstract: transistor 1000W 1000w power supply 1030 PULSED
Text: HVV1011-1000L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-1000L device is a high voltage silicon enhancement mode RF transistor
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HVV1011-1000L
on/18us
HVV1011-1000L
on/18
429-HVVi
EG-01-POXXX2
transistor 1000W
1000w power supply
1030 PULSED
|
PDF
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HV400
Abstract: 1030 mhz interrogator 1030 PULSED
Text: HVV1011-075L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-075L device is a high voltage silicon enhancement mode RF transistor
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HVV1011-075L
on/18us
HVV1011-075L
on/18
429-HVVi
EG-01-POXXX1
HV400
1030 mhz
interrogator
1030 PULSED
|
PDF
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