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HM6508 Datasheets (16)

Part	Manufacturer	Description	Type	PDF
HM-6508	Harris Semiconductor	1024 x 1 CMOS RAM	Original	PDF
HM-6508	Intersil	1024 x 1 CMOS RAM	Original	PDF
HM-6508	Harris Semiconductor	1024 x 1 CMOS RAM	Scan	PDF
HM-6508	Harris Semiconductor	Digital Data Book 1981	Scan	PDF
HM-6508-2	Harris Semiconductor	Digital Data Book 1981	Scan	PDF
HM-6508-5	Harris Semiconductor	Digital Data Book 1981	Scan	PDF
HM-6508/883	Harris Semiconductor	1024 x 1 CMOS RAM	Original	PDF
HM-6508/883	Intersil	1024 x 1 CMOS RAM	Original	PDF
HM-6508883	Intersil	1024 x 1 CMOS RAM	Original	PDF
HM-6508-883	Intersil	1024 x 1 CMOS RAM	Original	PDF
HM-6508-9	Harris Semiconductor	Digital Data Book 1981	Scan	PDF
HM-6508B-2	Harris Semiconductor	Digital Data Book 1981	Scan	PDF
HM-6508B-5	Harris Semiconductor	1024 x 1 CMOS RAM	Scan	PDF
HM-6508B-8	Harris Semiconductor	1024 x 1 CMOS RAM	Scan	PDF

HM-6508B-9	Harris Semiconductor	1024 x 1 CMOS RAM	Scan	PDF
HM-6508B-9	Harris Semiconductor	Digital Data Book 1981	Scan	PDF

HM6508 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Intersil 6508B Abstract: HM-6508 Text: HM-6508/883 TM 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max	Original	PDF	HM-6508/883 MIL-STD-883 20mW/MHz 180ns HM-6508/883 Intersil 6508B HM-6508
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
HM-6508-9 Abstract: 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508 HM-6508B-9 Text: HM-6508 TM 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.	Original	PDF	HM-6508 HM-6508 20mW/MHz 180ns HM-6508-9 6508 intersil HM1-6508-9 HM1-6508B-9 HM3-6508-9 HM3-6508B-9 HM-6508B-9
6508 RAM Abstract: No abstract text available Text: HM-6508/883 1024 x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.	Original	PDF	HM-6508/883 MIL-STD-883 HM-6508/883 20mW/MHz 180ns 6508 RAM
HM3-6508-9 Abstract: HM-6508-9 HM-6508 6508B9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508B-9 6508 RAM HM16508B-9 Text: HM-6508 1024 x 1 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . . 50µW Max The HM-6508 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation.	Original	PDF	HM-6508 HM-6508 20mW/MHz 180ns HM3-6508-9 HM-6508-9 6508B9 HM1-6508-9 HM1-6508B-9 HM3-6508B-9 HM-6508B-9 6508 RAM HM16508B-9
Untitled Abstract: No abstract text available Text: Specifications HM-6508B-2/HM-6508B-9 ABSOLUTE M A XIM U M RATINGS OPERATING RANGE Supply Voltage - VCC -G N D -0 .3 V to + 8.0 V Input or O utput Voltage Applied (G N D - 0 .3 V ) to (VCC + 0.3 V ) Storage Temperature Operating Supply Voltage -V C C Military (-2 )	OCR Scan	PDF	HM-6508B-2/HM-6508B-9 1500C 20nsec;
6508+(RAM) Abstract: 6508 Text: Wiftsras HM-6508/883 1 0 2 4 x 1 C M O S RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD-883 and is Fully Conform ant Under the Provi sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.	OCR Scan	PDF	HM-6508/883 MIL-STD-883 HM-6508/883 180ns HM6508/883 100kHz 6508+(RAM) 6508
m6508 Abstract: 6505 octagon HM-6513 6513 HM-6505 HM-6512 HM-6514 logic gate diagram of ic 4096X1 Text: fW ï -./U/L/lP HARRIS H M -6 5 0 5 SEM ICO NDUCTOR P R O D U C T S DIVISI ON A DIVISION OF H A R RIS CORPO RATION 4096 x 1 C M O S RAM Advance Information Pinout Features T O P V IE W 250ßW M AX. • LO W PO W ER S T A N D B Y • LO W POW ER O P E R A T IO N	OCR Scan	PDF	HM-6505 250/LIW 35mW/MHz 200ns HM-6505 A11A10A9 M-6508 HM-6512 HM-6513, m6508 6505 octagon HM-6513 6513 HM-6512 HM-6514 logic gate diagram of ic 4096X1
74c920 Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos Text: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's	OCR Scan	PDF
74c920 Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930 Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous	OCR Scan	PDF	256x4, HM-6508 HM-6518 HM-6551 HM-6561 74C929 74C930 74C920 HM-6504 74c920 ram 6164 6116 RAM 2116 ram 2064 ram 4016 RAM 4045 RAM 6264 cmos ram
1024X1 Abstract: No abstract text available Text: HM-6508/883 £ü HARRIS S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • This Circuit is Processed In Accordance to MII-Std-883 and is Fully Conformant Under the Provi sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM	OCR Scan	PDF	HM-6508/883 1024x1 HM-6508/883 lt-STD-1835, GDIP1-T16
STR 61001 Abstract: harris dx10 HM-6100 prom 256x4 bit DX10 HD-6101 HM-6322 HM-6512 HM-6561 HM-6661 Text: - - /TV L y f • ■ i^ H HARRIS SEMICONDUCTOR I g I« «— f/j f-io M l \ / l i n I S u /ic irtM PDDnm R O D U i/» C T tc S DnIV IS IO N ■ A DIVISION OF HARRIS CO RPO RA TIO N 1 ■■W ■ 64 x 12 C M O S R A M Pinout Features T O P V IE W • LO W POWER S T A N D B Y	OCR Scan	PDF	500/iW 20mW/MHz HM-6512 HM-6100 HM-6322 250ns HB-61000 HB-61001 MICRO-12 STR 61001 harris dx10 prom 256x4 bit DX10 HD-6101 HM-6561 HM-6661
6514 Abstract: m6508 HM-6513 A3U-4 6513 HM-6505 HM-6512 HM-6514 6508 RAM a2712 Text: fW i HARRIS <ü SEM ICO N D U CTO R P R O D U C T S DIVISION HM-6514 A DIVISION OF H A R RIS CORPO RATION 1024 X 4 CM OS RAM Pinout Features T O P V IE W LOW PO W ER ST A N D B Y 250JUW M A X . L O W P O W E R O P E R A T IO N 35mW/MHz M A X . D A T A R E T E N T IO N	OCR Scan	PDF	HM-6514 250JiW 35mW/MHz 200nsec HM-6514 HM-6505 M-6508 HM-6512 HM-6513, 6514 m6508 HM-6513 A3U-4 6513 HM-6505 HM-6512 6508 RAM a2712
Untitled Abstract: No abstract text available Text: HM-6508/883 Semiconductor 102 4x 1 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to M IL-STD-883 and is Fully Conform ant Under the Provi sions of Paragraph 1.2.1. The HM-6508/883 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology.	OCR Scan	PDF	HM-6508/883 HM-6508/883 IL-STD-883 100kHz

365089 Abstract: LA 6508 Text: HM-6508 Semiconductor 1 02 4x 1 CMOS RAM March 1997 Description Features • Low Power Max • Low Power O p eratio n . 20mW/MHz Max • Fast Access Time. 180ns Max	OCR Scan	PDF	HM-6508 HM-6508 365089 LA 6508
Creative IC CT 1975 Abstract: 74s188 programming sd 431 sn74s454 MMI TiW PROM programming procedure ci la 7610 74S472 PROM PROGRAMMING MB7122H 74S287 programming instructions FZH 161 Text: Part of the Harris Spectrum of Integrated Circuits 44 HARRIS Q Quantum e! scironic#500 Sox 391262 B ra m ie y 1984 Harris Bipolar Digital Data Book 2018 Harris Semiconductor Bipolar Digital Products represent state-of-the-art production in density and performance.	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: HM-6508 f ï î H A R R IS U U S E M I C O N D U C T O R 1024x1 CMOS RAM February 1992 Features Description • Low Power S tandby. 50^iW Max. • Low Power O p e ra tio n . 20mW /MHz Max.	OCR Scan	PDF	HM-6508 1024x1 HM-6508 180ns
6508 ram Abstract: HM-6513 HM-6508 6508 static HM-6505 HM-6512 HM-6514 m6508 Text: SASEES5 HM-6508 P R O D U C T S D IV ISIO N 1024 x 1 C M O S R A M Pinout Features 5 0 [X\N M A X 2 0 m W /M H z M A X LOW S T A N D B Y POWER LOW O P E R A T IN G POWER • EC 1 180nsec M A X 2 .0 V O L T S M IN F A ST ACCESS T IM E D A T A R E T E N T IO N V O L T A G E	OCR Scan	PDF	HM-6508 180nsec HM-6508 HM-6505 M-6508 HM-6512 HM-6513, HM-6514 6508 ram HM-6513 6508 static HM-6505 HM-6512 HM-6514 m6508
Untitled Abstract: No abstract text available Text: h a h a r r is M - 6 5 0 8 /8 8 3 1024 x 1 CMOS RAM June 1989 P in o u t Features • This Circuit is Processed in Accordance to M il-S td -8 8 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Low Power S ta n d b y .50 iW M ax.	OCR Scan	PDF	180ns
triac tag 8518 Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference	OCR Scan	PDF
TCA965 equivalent Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated	OCR Scan	PDF	DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
U010B Abstract: No abstract text available Text: HARRIS SEMICOND SECTOR TS * •» * T D E I M30HS71 Ü010b40 3 I D 4 H M -6 5 0 Q h a rris 1024 x 1 CMOS RAM Pinout Features TOP VIEW .50\|iW Max. • Low Operating P o w e r . 2 0 m W /M H z Max.	OCR Scan	PDF	M30HS71 010b40 180ns U010B
6513 Abstract: 6513H HM-6513 HM-6513H octagon HM-6513L HM-6505 HM-6512 HM-6514 Text: *Æ\ Il • HM-6513 P R O D U C T S D IV IS IO N A DIVISION OF HARRIS CORPORATION _ _ _ _ _ Features Pinout 2 5 0 ¿/W M A X . LOW POWER S T A N D B Y 3 5 m W /M H z M A X . LOW POWER O P E R A T IO N D A T A R E T E N T IO N @ 2 .0 V M IN . T T L C O M P A T IB IL IT Y IN P U T /O U T P U T	OCR Scan	PDF	HM-6513 HM-6514 250//W 35mW/MHz 300nsec HM-6513 HM-6505 M-6508 HM-6512 HM-6513, 6513 6513H HM-6513H octagon HM-6513L HM-6505 HM-6512 HM-6514
Untitled Abstract: No abstract text available Text: a HM-6508 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 1 CM O S RAM August 1996 Features Description • Low Power S ta n d b y .50\|iW Max • Low Power O p e ra tio n . 20m W /MHz Max •	OCR Scan	PDF	HM-6508 180ns HM-6508 00bfl244

HM6508 Search Results

HM6508 Price and Stock

Luminus Devices CHM-6-50-80-9-AA00-F2-3

Luminus Devices CHM-6-50-80-9-AA00-F2-5

Luminus Devices CHM-6-50-80-27-XH20-F3-3

Luminus Devices CHM-6-50-80-36-AA10-F3-5

Luminus Devices CHM-6-50-80-27-XH00-F2-3

HM6508 Datasheets (16)

HM6508 Datasheets Context Search

Intersil 6508B

sn76131

HM-6508-9

6508 RAM

HM3-6508-9

Untitled

6508+(RAM)

m6508

74c920

74c920

1024X1

STR 61001

6514

Untitled

365089

Creative IC CT 1975

Untitled

6508 ram

Untitled

triac tag 8518

TCA965 equivalent

U010B

6513

Untitled