lvc16244
Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List
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HD49323A
HA12134A
HA12141N
HA12155N
HA12163
HA12167F
HA12173
HA12179F
HA12181F
HA12187F
lvc16244
BC240
2sk3174
CBT1G125
LV2GT14A
HC32 Hitachi
HA13557A
transistor 2SC1162
H8 hitachi programming manual
30204SP
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2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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2SJ504
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SJ1334
Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
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HA16142P/FP
ADE-504-006
DO-35
DO-41
HA16142P/FP
2SJ1334
2SK3235
HSK81
Hitachi DSAUTAZ006
HA16141
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2SJ505
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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2SJ506
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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TO220CFM
Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)
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2SK2927*
O-220
2SK2928*
2SK2929*
2SK2930*
2SK2931*
TO220CFM
2SK2554
TO-220CFM
to-3p(i)d series
HAT1020R
HAT1021R
HAT1023R
HAT1024R
HAT1026R
HAT2016R
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2SJ506
Abstract: Hitachi DSA0076 Hitachi 2SJ
Text: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548C (Z) 4th. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
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2SJ506
ADE-208-548C
Hitachi DSA0076
Hitachi 2SJ
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2SJ504
Abstract: ADE-208-546 Hitachi DSA00396
Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R DS on = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM
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2SJ504
ADE-208-546
220FM
2SJ504
ADE-208-546
Hitachi DSA00396
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2SJ506
Abstract: Hitachi DSA00347
Text: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance R DS(on) = 0.065 Ω typ. (at V GS = –10V, ID = –5A) • Low drive current • High speed switching • 4V gate drive devices.
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2SJ506
ADE-208-548
Hitachi DSA00347
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Hitachi DSA0076
Abstract: 2SJ505 Hitachi 2SJ
Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547B (Z) 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK
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2SJ505
ADE-208-547B
Hitachi DSA0076
Hitachi 2SJ
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546B Z 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220FM D G S
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2SJ504
ADE-208-546B
220FM
D-85622
Hitachi DSA00276
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2SJ505
Abstract: Hitachi DSA00347
Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline
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2SJ505
ADE-208-547
Hitachi DSA00347
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Hitachi 2SJ
Abstract: Hitachi DSA002779
Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance RDS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline
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2SJ505
ADE-208-547
Hitachi 2SJ
Hitachi DSA002779
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Hitachi 2SJ
Abstract: Hitachi DSA002757
Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-547 Target specification 1st. Edition Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline
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2SJ505
ADE-208-547
Hitachi 2SJ
Hitachi DSA002757
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2SJ504
Abstract: Hitachi 2SJ Hitachi DSA002779
Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching ADE-208-546 Target specification 1st. Edition Features • Low on-resistance RDS on = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ504 Absolute Maximum Ratings (Ta = 25°C)
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2SJ504
ADE-208-546
2SJ504
Hitachi 2SJ
Hitachi DSA002779
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2sk135
Abstract: 2SK134 2SJ49 2sk134 hitachi 2sk135 2SK133 2Sk135 HITACHI 2Sk134 HITACHI 2SK13S HITACHI 2SK133 2sk133 2Sj48
Text: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.
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D13D0Ö
2SK133
2SK134
2SK135
2SJ48,
2SJ49,
2SJ50
35FOR
2sk135
2SJ49 2sk134
hitachi 2sk135
2Sk135 HITACHI
2Sk134 HITACHI
2SK13S
HITACHI 2SK133
2sk133 2Sj48
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2SK134
Abstract: 2SJ49 2sk134 2SK135 2SJ50 2SJ49 2SK133 hitachi 2sk135 2SJ48 2sk1 CIMI
Text: blE D *44^205 ÜD13D0Ö 217 IHIT4 2SK133,2SK134,2SK135 HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ48, 2SJ49, 2SJ50 • FEATURES • • • • • • • High Power Gain. Excellent Frequency Response.
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2SJ48,
2SJ49,
2SJ50
D13D0Ã
2SK133
2SK134
2SK13S
D13G10
2SJ49 2sk134
2SK135
2SJ50
2SJ49
hitachi 2sk135
2SJ48
2sk1
CIMI
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ADE-208-546
Abstract: Hitachi 2SJ
Text: 2SJ504 Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-546 Target specification 1st. Edition Features • Low on-resistance R ds o« = 0.042Q typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO—220FM
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2SJ504
ADE-208-546
220FM
Hitachi 2SJ
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Hitachi 2SJ
Abstract: No abstract text available
Text: 2SJ505 L , 2SJ505(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-547 Target specification 1st. Edition Features • Low on-resistance • Low drive current. • 4V gate drive devices. • High speed switching. R d s („ „ ) = 0.017Q typ.
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2SJ505
ADE-208-547
--25A,
Hitachi 2SJ
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Untitled
Abstract: No abstract text available
Text: 2SJ506 L , 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI ADE-208-548 Target Specification 1st. Edition Features • Low on-resistance • L o w drive current • H igh speed switching • 4 V gate drive devices. Roaon) = 0.065 Q typ. (at V GS= -1 0 V , ID = -5 A )
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2SJ506
ADE-208-548
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2SJ56 2sk176
Abstract: 2sJ50 mosfet Hitachi 2sk176 2sj56 2SK176 2sk133 2Sj48 2sk1058 2SJ162 transistor 2sj162 2SJ56 2SJ56 HITACHI 2SK1058 MOSFET
Text: HITACHI 5 1.4 S-Series for Power Amplifiers output stages can easily be designed just by connecting extra power MOSFETs in parallel. This flexibility arises from th e p o sitiv e temperature coefficient of the pow er MOSFET, which gives the transistor the ability to share
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2SK176
2SJ56
2SK220
2SK221
2SK258
2SK259
2SK260
2SK1056
2SJ56 2sk176
2sJ50 mosfet
Hitachi 2sk176 2sj56
2sk133 2Sj48
2sk1058 2SJ162
transistor 2sj162
2SJ56 HITACHI
2SK1058 MOSFET
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2SJ56 2sk176
Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
Text: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G H orizon tal y D eflection' Coil , Vertical ' Deflection , Coil 1 I Horizontal Deflection Video output - "I Focus _ _ Electrocie” B O . Deflection Signal m Vertical Ci Vertical
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2SC2610
2SC2611
2SC4828
2SC26U
2SK296
2SJ56 2sk176
2SK176
2sk1058 2SJ162
HITACHI 2Sk176
2SJ75
2sk133 2Sj48
2sJ50 mosfet
2sj56
2SK1058 MOSFET APPLICATION NOTES
2sk135 application
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HA 12058
Abstract: HA12047 HA12038 ha12058 17812P HA 12046 HA12026 HA12045 17815P 17808P
Text: HITACHI QUICK REFERENCE GUIDE TO INTEGRATED CIRCUITS AND DISCRETE SEMICONDDCTOR DEVICES PREFERRED EUROPEAN TYPE-SELECTION P.O. Box 56310, Pinegowrie 2123 nn i ^ fïü n n UDüü E B E « EBE HMffll M K MI §03* M H M B I1 2 1 » PREFERRED EUROPEAN TYPE-SELECTION
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HD25/HD
HMCS40
HL8314E"
HL8312
HL8311
HLP1000
HL7802
HL7801
HL1221
HLP5000
HA 12058
HA12047
HA12038
ha12058
17812P
HA 12046
HA12026
HA12045
17815P
17808P
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