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    HIGH GAIN Search Results

    HIGH GAIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    High-End-Gas-Cooker Renesas Electronics Corporation High-End Gas Cooker Reference Design Visit Renesas Electronics Corporation
    CLC401A/BPA Rochester Electronics LLC CLC401 - OP AMP, WIDEBAND, FAST SETTLING, HIGH GAIN - Dual marked (5962-8997301PA) Visit Rochester Electronics LLC Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
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    HIGH GAIN Price and Stock

    Siretta Ltd DELTA12C-X-SMAM-S-S-17-HIGH-GAIN

    RF ANT 915MHZ WHIP STR SMA MALE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DELTA12C-X-SMAM-S-S-17-HIGH-GAIN Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Siretta Ltd DELTA12C/x/SMAM/S/S/17 HIGH GAIN

    Antennas 915 MHZ 170mm FLEXY RUBBER 1/4 WAVE WHIP ANTENNA 5 DBI GAIN SMA M CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DELTA12C/x/SMAM/S/S/17 HIGH GAIN 3
    • 1 $20.33
    • 10 $17.27
    • 100 $15.24
    • 1000 $13.55
    • 10000 $13.55
    		Buy Now

    HIGH GAIN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SGNE045MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 47.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=2.2GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		SGNE045MK PDF

    SGNE030MK

    Abstract: No abstract text available
    Text: SGNE030MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 46.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=2.7GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		SGNE030MK SGNE030MK PDF

    hd 5888

    Abstract: No abstract text available
    Text: SGNE090MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 51.0dBm typ. @ Psat - High Efficiency: 70%(typ.) @ Psat - Linear Gain : 20.0dB(typ.) @ f=0.9GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		SGNE090MK hd 5888 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGNE010MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 40.5dBm typ. @ Psat - High Efficiency: 55%(typ.) @ Psat - Linear Gain : 16.0dB(typ.) @ f=3.5GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		SGNE010MK PDF

    Untitled

    Abstract: No abstract text available
    Text: SGNE070MK High Voltage - High Power GaN-HEMT FEATURES - High Voltage Operation : VDS=50V - High Power : 49.5dBm typ. @ Psat - High Efficiency: 70%(typ.) @ Psat - Linear Gain : 21.0dB(typ.) @ f=0.9GHz - Proven Reliability DESCRIPTION SEDI’s GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		SGNE070MK PDF

    JEP95

    Abstract: SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07 Preliminary Specifications SST12LP072.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C High linear output power:


    Original     		SST12LP07 SST12LP072 11g/b S71321-00-000 JEP95 SST12LP07 SST12LP07-QVCE SST12LP07-QVCE-K PDF

    SST12LP14A

    Abstract: SST12LP14A-QVCE JEP95 SST12LP14A-QVCE-K S7130 S71300-02-000
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


    Original     		SST12LP14A SST-GP1214A2 11g/b S71300-02-000 SST12LP14A SST12LP14A-QVCE JEP95 SST12LP14A-QVCE-K S7130 S71300-02-000 PDF

    SST12LP15

    Abstract: rf power amplifier transistor with s-parameters SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP15 Preliminary Specifications SST-GP12152.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 35 dB gain across 2.4~2.5 GHz over temperature 0°C to +80°C High linear output power:


    Original     		SST12LP15 SST-GP12152 11g/b S71277-00-000 SST12LP15 rf power amplifier transistor with s-parameters SST12LP15-QVC SST12LP15-QVCE SST12LP15-QVC-K PDF

    JEP95

    Abstract: SST12LP14A SST12LP14A-QVCE SST12LP14A-QVCE-K
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14A Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 29 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


    Original     		SST12LP14A SST-GP1214A2 11g/b S71300-02-000 JEP95 SST12LP14A SST12LP14A-QVCE SST12LP14A-QVCE-K PDF

    2.45 GHz single chip transmitter

    Abstract: JEP95 SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K S71353
    Text: 2.4 GHz High-Power, High-Gain Power Amplifier SST12LP14C Preliminary Specifications SST-GP1214A2.4 GHz High Gain High Power PA FEATURES: • • • • • • High Gain: – Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:


    Original     		SST12LP14C SST-GP1214A2 11b/g S71353-00-000 2.45 GHz single chip transmitter JEP95 SST12LP14C SST12LP14C-QVCE SST12LP14C-QVCE-K S71353 PDF

    EMP14

    Abstract: NJM2727 NJM2727E emp8 Package
    Text: NJM2727 HIGH-SPEED AND HIGH OPERATING VOLTAGE OPERATIONAL AMPLIFIER •GENERAL DESCRIPTION ■PACKAGE OUTLINE The NJM2727 is a high-speed, high operating voltage single operational amplifier. With 300V/µs slew rate, 40MHz unity gain bandwidth and 4mV input offset voltage the NJM2727 offers high


    Original     		NJM2727 NJM2727 40MHz NJM2727D NJM2727E EMP14 NJM2727E emp8 Package PDF

    high power microwave transmitter

    Abstract: microwave sensor 145mm power amplifier 12 GHZ High Power Microwave Device 90-GHz
    Text: HBH 8.0 – 12.0 GHz High Power Amplifier Microwave GmbH HA6011/4 General Description The HA6011/4 is a high power amplifier modul for applications in Ku-Band. The high gain and high output power makes this device an ideal choice as a high power amplifier for


    Original     		HA6011/4 HA6011/4 145mm 105mm high power microwave transmitter microwave sensor power amplifier 12 GHZ High Power Microwave Device 90-GHz PDF

    HA9P5002-9

    Abstract: HA-5002 operational amplifier HA2-5002 HA2-5002-2 HA2-5002-5 HA3-5002-5 HA4P5002-5 HA9P5002-5 LH0002 HA-5002-2
    Text: HA-5002 Data Sheet July 2003 110MHz, High Slew Rate, High Output Current Buffer FN2921.6 Features • Voltage Gain . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.995 The HA-5002 is a monolithic, wideband, high slew rate, high output current, buffer amplifier.


    Original     		HA-5002 110MHz, FN2921 HA-5002 3000k 110MHz 200mA HA9P5002-9 operational amplifier HA2-5002 HA2-5002-2 HA2-5002-5 HA3-5002-5 HA4P5002-5 HA9P5002-5 LH0002 HA-5002-2 PDF

    MJD18002D2

    Abstract: MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1
    Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector–Emitter Diode and Built–In Efficient Antisaturation Network http://onsemi.com The MJD18002D2 is a state–of–the–art high speed, high gain


    Original     		MJD18002D2 MJD18002D2 r14525 MJD18002D2/D MJD18002D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SMD310 MJD18002D2-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SK10/100EL16X High Gain Differential Receiver with Variable Output Swing HIGH-PERFORMANCE PRODUCTS EDGE HIGH-PERFORMANCE PRODUCTS Description Features The SK10/100EL16X is a high gain differential receiver with variable output swing. Its VCTRL input controls the


    Original     		SK10/100EL16X EL16X SK10EL/ELT SK100EL/ELT PDF

    Part Marking TO-220 STMicroelectronics

    Abstract: 2ST501T Marking STMicroelectronics to220 Solenoid Driver Darlington 25feb2005
    Text: 2ST501T HIGH VOLTAGE NPN POWER TRANSISTOR n n n n HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATION JUNCTION TEMPERATURE HIGH DC CURRENT GAIN Figure 1: Package APPLICATIONS n DRIVER FOR SOLENOID, RELAY AND MOTOR DESCRIPTION


    Original     		2ST501T 2ST501T O-220 O-220 Part Marking TO-220 STMicroelectronics Marking STMicroelectronics to220 Solenoid Driver Darlington 25feb2005 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT240J / RT240 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 40dBm Typ. @2.5GHz P3dB = 43dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 18dB(Typ.)@900MHz


    Original     		RT240J RT240 50MHz 40dBm 43dBm 900MHz IMT-2000 WP-22 WP-12 RT240 PDF

    HIGH CURRENT OPERATIONAL AMPLIFIER

    Abstract: CO3414 SINGLE-SUPPLY DUAL HIGH CURRENT OPERATIONAL AMPLIFIER DUAL HIGH CURRENT OPERATIONAL AMPLIFIER
    Text: CO3414 Single-supply Dual High Current Operational Amplifier DESCRIPITION Outline Drawing The CO3414 integrated circuit is a high gain, high output current, high output voltage swing dual operational amplifier capable of driving 70mA. FEATURE z z z z z Single Supply


    Original     		CO3414 CO3414 HIGH CURRENT OPERATIONAL AMPLIFIER SINGLE-SUPPLY DUAL HIGH CURRENT OPERATIONAL AMPLIFIER DUAL HIGH CURRENT OPERATIONAL AMPLIFIER PDF

    6N134

    Abstract: MC013
    Text: MC013 Mii MICROCOUPLER, HIGH GAIN-HIGH SPEED INVERTED OUTPUT Similar to 6N134 Features: • High speed, high gain inverting output • Small size saves real estate • Large thick film gold bond pads • Element evaluation on request OPTOELECTRONIC PRODUCTS


    Original     		MC013 6N134) MC013 6N134 PDF

    201739A

    Abstract: MURATA GRM GRM, MURATA MURATA GJM MURATA GRM 0402 100 pf SKYWORKS QFN 16-PIN 2.5 X 2.5 murata 0402 footprint
    Text: DATA SHEET SKY67107-306LF: 2.3-2.8 GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier Applications • LTE cellular infrastructure and ISM band systems • Ultra low-noise, high gain and high linearity systems • Digital satellite radio Features


    Original     		SKY67107-306LF: 16-pin, J-STD-020) SKY67107-306LF 01739A 201739A MURATA GRM GRM, MURATA MURATA GJM MURATA GRM 0402 100 pf SKYWORKS QFN 16-PIN 2.5 X 2.5 murata 0402 footprint PDF

    GSM repeater circuit using transistor

    Abstract: No abstract text available
    Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz


    Original     		RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12 GSM repeater circuit using transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz


    Original     		RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor RT232 Product Features Application • Frequency Range = 50MHz ~ 6GHz • High Output Power P1dB = 33dBm Typ. @2.5GHz P3dB = 36dBm(Typ.)@2.5GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 19dB(Typ.)@900MHz G1dB = 15dB(Typ.)@2.14GHz


    Original     		RT232 50MHz 33dBm 36dBm 900MHz 14GHz IMT-2000 SP-12 RT232 IMT-2000, PDF

    221-166

    Abstract: 2SA1978 NE02133 NE97833 NE97833-T1 S21E k 2445 transistor
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97833 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 5.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE02133 • HIGH INSERTION POWER GAIN: |S21E|2 = 10 dB at 1 GHz 33 SOT 23 STYLE


    Original     		NE97833 NE02133 NE97833 2SA1978 NE97833-T1 24-Hour 221-166 2SA1978 NE02133 NE97833-T1 S21E k 2445 transistor PDF