IS41C16256C-35TLI
Abstract: IS41C16256C
Text: IS41C16256C IS41LV16256C ADVANCED INFORMATION APRIL 2010 256Kx16 4Mb DRAM WITH EDO PAGE MODE FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS CBR , and Hidden • JEDEC standard pinout
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IS41C16256C
IS41LV16256C
256Kx16
IS41C16256C)
IS41LV16256C)
IS41C/LV16256C
16-bit
400-mil
IS41C16256C-35TLI
IS41C16256C
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mk4564
Abstract: MK4096 mostek mk4564
Text: l! UNITED TECHNOLOGIES MOSTEK MEMORY COMPONENTS 65,536 x 1-BIT DYNAMIC RAM MK4564 P/N/J/E -15/20 FEATURES o Extended DOUT hold using CAS control (Hidden Refresh) Recognized industry standard 16-pin configuration from Mostek o Common I/O capability using "early write"
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MK4564
16-pin
IV-78
IV-79
MK4096
mostek mk4564
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IS41C44052C-50CTGI
Abstract: No abstract text available
Text: IS41C44052C IS41LV44052C 4Mx4 16Mb DRAM WITH FAST PAGE MODE ADVANCED INFORMATION AUGUST 2010 FEATURES DESCRIPTION • Fast Page Mode Access Cycle • TTL compatible inputs and outputs • Refresh Interval: 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS CBR , and Hidden
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IS41C44052C
IS41LV44052C
cycles/32
IS41C44052C)
IS41LV44052C)
IS41C/41LV44052C
IS41LV44052C-50CTGI
300-mil
MS-025
IS41C44052C-50CTGI
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Untitled
Abstract: No abstract text available
Text: IS41C16256A IS41LV16256A ISSI 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE FEBRUARY 2004 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
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IS41C16256A
IS41LV16256A
IS41C16256A)
IS41LV16256A)
IS41C16256A
IS41LV16256A
16bit
16-bit
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Untitled
Abstract: No abstract text available
Text: IS41C44052C IS41LV44052C 4Mx4 16Mb DRAM WITH FAST PAGE MODE ADVANCED INFORMATION MAY 2010 FEATURES DESCRIPTION • Fast Page Mode Access Cycle • TTL compatible inputs and outputs • Refresh Interval: 2,048 cycles/32 ms • Refresh Mode: RAS-Only, CAS-before-RAS CBR , and Hidden
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IS41C44052C
IS41LV44052C
cycles/32
IS41C44052C)
IS41LV44052C)
IS41C/41LV44052C
300-mil
Alloy42
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IS41LV16257C
Abstract: iS41C16257C
Text: IS41C16257C IS41LV16257C 256Kx16 4Mb DRAM WITH FAST PAGE MODE JANUARY 2013 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tri-state I/O • Refresh Interval: 512 cycles/8 ms • Refresh Mode: RAS-Only, CAS-before-RAS CBR , and Hidden • JEDEC standard pinout
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IS41C16257C
IS41LV16257C
256Kx16
IS41C16257C)
IS41LV16257C)
IS41LV16257C
16-bit
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IS41C85120A-60K
Abstract: IS41LV85120A-60K IS41C85120A
Text: IS41C85120A IS41LV85120A ISSI 512K x 8 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE FEBRUARY 2004 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
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IS41C85120A
IS41LV85120A
cycles/16
IS41C85120A)
IS41C85120A
IS41LV85120A
IS41C85120A-60K
IS41LV85120A-60K
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EDI4164MEV50SM
Abstract: EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI
Text: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 EDO Extended Data Out Dynamic RAM 3.3V FEATURES • 4 Meg x 16 bit CMOS Dynamic RAM ■ RAS - Only, CAS-before-RAS, and HIDDEN refresh capability ■ Package: ■ Low Operating Power Dissipation ■ Access Time: 50, 60 and 70ns
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EDI4164MEV-RP
4Mx16
EDI4164MEV50SM
EDI4164MEV60SM
EDI4164MEV70SM
EDI4164MEV50SI
EDI4164MEV60SI
EDI4164MEV70SI
EDI4164MEV50SM
EDI4164MEV-RP
EDI4164MEV60SM
EDI4164MEV70SM
4mx16 edo
EDI4164MEV50SI
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Untitled
Abstract: No abstract text available
Text: ISSI IS41LV16256B 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE AUGUST 2004 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 512 cycles/8 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout
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IS41LV16256B
IS41LV16256B
16-bit
32-bit
400-mil
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IS41C16257C
Abstract: IS41LV16257C-35KL IS41LV16257C IS41LV16257C-35KLI
Text: IS41C16257C IS41LV16257C 256Kx16 4Mb DRAM WITH FAST PAGE MODE FEATURES • • • • • • • • • Fast access and cycle time TTL compatible inputs and outputs Refresh Interval: 512 cycles/8 ms Refresh Mode: RAS-Only, CAS-before-RAS CBR , and Hidden
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IS41C16257C
IS41LV16257C
256Kx16
IS41C16257C)
IS41LV16257C)
IS41C16257C/IS41LV16257C
16-bit
IS41C16257C-35KLI
IS41C16257C-35TLI
400-mil
IS41C16257C
IS41LV16257C-35KL
IS41LV16257C
IS41LV16257C-35KLI
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Untitled
Abstract: No abstract text available
Text: ISSI IS41LV85120B 512K x 8 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE AUGUST 2004 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout
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IS41LV85120B
cycles/16
IS41LV85120B
32-bit
IS41LV85120B-60K
400-mil
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IS41LV85120B-60K
Abstract: IS41LV85120B-60KL IS41LV85120B
Text: ISSI IS41LV85120B 512K x 8 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout
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IS41LV85120B
cycles/16
IS41LV85120B
32-bit
IS41LV85120B-60K
IS41LV85120B-60KL
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IS41C85120A
Abstract: IS41C85120A-60K IS41LV85120A-60K IS41LV85120A-60KL
Text: IS41C85120A IS41LV85120A ISSI 512K x 8 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16 ms • Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden • JEDEC standard pinout
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IS41C85120A
IS41LV85120A
cycles/16
IS41C85120A)
IS41LV85120A)
IS41C85120A
IS41LV85120A
IS41LV85140
IS41C85120A-60K
IS41LV85120A-60K
IS41LV85120A-60KL
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82052S
Abstract: No abstract text available
Text: IC41C82052S IC41LV82052S 2M x 8 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE FEATURES DESCRIPTION FAST Page Mode access cycle TTL compatible inputs and outputs Refresh Interval: Refresh Mode: 4)5-Only, +)5-before-4)5 (CBR), and Hidden, 2,048 cycles/32 ms
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IC41C82052S
IC41LV82052S
16-MBIT)
cycles/32
cycles/128
82052S
400mil
300mil
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WE VQE 23 F
Abstract: AM2970 Dynamic Memory Refresh Controller WE VQE 11 E WE VQE 24 E hat 901 cs dmc ge AM2968
Text: 1 . r ,/ Am2970 Dynamic Memory Timing Controller ^T'f v o 1A '-* ' A , PRELIMINARY > 3 to DISTINCTIVE CHARACTERISTICS Internal or external control of refresh Burst up to 512-cycle , distributed, or hidden refresh Memory access/refresh request arbitration
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Am2970
64K/256K
Am2968
512-cycle)
Am2970
AIS-B-15M-02/86-0
WE VQE 23 F
Dynamic Memory Refresh Controller
WE VQE 11 E
WE VQE 24 E
hat 901 cs
dmc ge
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44460D
Abstract: BK36C-80
Text: TM124MBK36C, TM124MBK36S1048576 BY 36-BIT TM248NBK36C, TM248NBK36S 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS138B - MARCH 1992 - REVISED JUNE 199S Enhanced Page Mode Operation With CAS-Before-RAS CBR , RAS-Only, and Hidden Refresh Presence Detect Performance Ranges:
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TM124MBK36C,
TM124MBK36S1048576
36-BIT
TM248NBK36C,
TM248NBK36S
SMMS138B
TM124MBK36C
TM248NBK36C
72-pln
44460D
BK36C-80
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Untitled
Abstract: No abstract text available
Text: IBM11D4360B IBM11E4360B IBM11D8360B IBM11E8360B 4M/8M x 36 DRAM Module Features High Performance CMOS process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only, CBR and Hidden
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IBM11D4360B
IBM11E4360B
IBM11D8360B
IBM11E8360B
72-Pin
110ns
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Untitled
Abstract: No abstract text available
Text: IBM11D2320H IBM11E2320H 2M x 32 DRAM Module Features Thin outline .104” Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & CMOS compatible Fast Page access cycle Refresh Modes: RAS-Only, CBR, and Hidden Refresh
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IBM11D2320H
IBM11E2320H
72-Pin
110ns
130ns
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Untitled
Abstract: No abstract text available
Text: DM2200EDRAM 4Mb x 1Enhanced Dynamic RAM ^ p M T R O N Preliminary Datasheet Features I On-Chip Cache Hit/Miss Comparator I Transparent DRAM Refresh During Cache Reads I Hidden DRAM Precharge During Cache Reads I Refresh Counter with Dedicated Path to DRAM Array
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DM2200EDRAM
15nsec
35nsec
2200J
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512A9
Abstract: No abstract text available
Text: HY51 V S 174Q0HG(HGL) 4Mx4, 3.3V, 2 K Ref, FP DESCRIPTION FEATURES Fast Page Mode capability Read-modify-write capability Multi-bit parallel test capability TTL(3.3V) compatible inputs and outputs /RAS only, CAS-before-/RAS, Hidden and self refresh(L-version) capability
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174Q0HG
HY51V
17400HG/HGL
300mil
512A9
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SYD23244
Abstract: D6 48 61D13 63D14 D2147
Text: • 72 Pin Singie in-iine Memory Module. • 5 Volt Supply ± 5%. • 2048 Refresh Cycles. • Fast Page Mode Capability. • Three Refresh Modes: CAS before RAS, RAS only and Hidden Refresh. • Extreme temperature and voltage testing to ensure high reliability.
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SYD23244
16Mbyte
AO-A10
D6 48
61D13
63D14
D2147
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Untitled
Abstract: No abstract text available
Text: IBM11S1325L 1M x 32 SODIMM Module Features cations. Low active current consumption All inputs & outputs are LVTTL 3.3V or TTL(5V) compatible Extended Data Out (EDO) access cycle Refresh Modes: RAS-Only, CBR, Hidden Refresh and Self Refresh 1024 refresh cycles distributed across 128ms
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IBM11S1325L
128ms
72-Pin
104ns
124ns
1Mx32
1Mx16
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saa 1070
Abstract: NE 565 texas instruments TM124MBK36C TM124MBK36S TM248NBK36C TM248NBK36S
Text: TM124MBK36C, TM124MBK36S 1 048 576 BY 36-BIT DYNAMIC RAM MODULE TM248NBK36C, TM248NBK36S 2 097 152 BY 36-BIT DYNAMIC RAM MODULE • Enhanced Page Mode Operation With CAS-Before-RAS, RAS-Only, and Hidden Refresh Single 5-V Power Supply ±10% Tolerance •
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TM124MBK36C,
TM124MBK36S
36-BIT
TM248NBK36C,
TM248NBK36S
SMMS138A-MARCH
1992-REVISED
TM124MBK36C
TM248NBK36C
saa 1070
NE 565 texas instruments
TM124MBK36C
TM248NBK36C
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Untitled
Abstract: No abstract text available
Text: STI321000D1 -xxV 72-PIN DIMMS 1M X 32 DRAM DIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC STI3210OOD1-70V 70ns 20ns 130ns STI321000D1 -80 V 80ns 20ns 150ns Fast Page Mode operation CAS-before-RAS refresh capability RAS-only and Hidden refresh capability
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STI321000D1
STI3210OOD1-70V
130ns
150ns
72-PIN
STI321000D1-xxV
20-pin
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