80-QFP-1420C
Abstract: 7 seg KS57P2316 149345 33740 12seg
Text: BONDING DIAGRAM PRODUCT PAGE KS57P2316 1 80 75 REV NO. 70 65 61 5 60 10 55 Y = 4460um ID : -1552 -1997 X = 3620um 50 15 CJ7235X 45 20 21 25 TITLE 30 35 40 41 CJ7235X #1 L/F MAT’L ALLOY42 PKG TYPE 80_QFP_1420C CHIP SIZE 3620x4460um DEV NAME CJ7235X_Rev0_1420C
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KS57P2316
4460um
3620um
CJ7235X
ALLOY42
1420C
3620x4460um
CJ7235X
80-QFP-1420C
7 seg
KS57P2316
149345
33740
12seg
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AS4SD32M16
Abstract: No abstract text available
Text: SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) • Fully synchronous; all signals registered on positive
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AS4SD32M16
512Mb:
192-cycle
-40oC
-55oC
125oC
AS4SD32M16
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Untitled
Abstract: No abstract text available
Text: SDRAM AS4SD8M16 128 Mb: 8 Meg x 16 SDRAM PIN ASSIGNMENT Top View Synchronous DRAM Memory 54-Pin TSOP FEATURES • • • • • • • • • • • • • • Full Military temp (-55°C to 125°C) processing available Copper lead frame option for enhanced reliability
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AS4SD8M16
096-cycle
-40oC
-55oC
125oC
AS4SD8M16
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IS42S16160D
Abstract: IS42S16160D-7TLI
Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed
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IS42S83200D,
IS42S16160D
IS45S83200D,
IS45S16160D
32Meg
16Meg
256-MBIT
256Mb
IS42S83200D
IS42S16160D
IS42S16160D-7TLI
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PPAP level submission requirement table
Abstract: PPAP MANUAL for automotive industry foundry metals quality MANUALS result of 200 prize bond INCOMING MATERIAL INSPECTION checklist, PCB TSMC 90nm sram SMD a006 ISO 9001 Sony foundry INCOMING MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION procedure
Text: Contents Contents i Chapter 1 Quality Management 1.1 Quality Policy 1.2 Quality Organization 1.3 ISO 9001 Year 2000 Revision 1.4 Quality Systems 1.4.1 Process Map 1.4.2 Advanced Product Quality Planning 1.4.3 Quality Assurance in the Project Approval Stage
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V5-0515D3-R
Abstract: V5-1212S3 V5-0512D3-R V5-2405S3 V5-0524D3-R V5-2424S3 V5-2405D3-R V5122 V5050 V5-1212D3-R
Text: V5-3W Series MOTIEN TECHNOLOGY 3W Regulated Single & Dual output Features DC- DC V5-0 CO M O T 5 0 5 S 3 N V E R TE R IEN 042 1 T he V5 series is a family of cost effective 3W single & dual output DC-DC converters. These converters combine miniature package in a
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24-pin
D-63069
V5-0515D3-R
V5-1212S3
V5-0512D3-R
V5-2405S3
V5-0524D3-R
V5-2424S3
V5-2405D3-R
V5122
V5050
V5-1212D3-R
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IS41LV44002B
Abstract: 41LV44002B IS41LV44002B-50CTG IS41LV44002B-50T
Text: IS41LV44002B 4M x 4 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE JANUARY 2010 FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: The ISSI IS41LV44002B is 4,194,304 x 4-bit high-performance CMOS Dynamic Random Access Memory. These
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IS41LV44002B
16-MBIT)
IS41LV44002B
cycles/32
300-mil
Alloy42
IS41LV44002B-50TI
41LV44002B
IS41LV44002B-50CTG
IS41LV44002B-50T
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IS45S16800E
Abstract: 2MX16X4 IS45S16800E-7CTNA1 is45s16800e-7tla2 IS45S16800E-6BLA
Text: IS45S81600E IS45S16800E 16M x 8, 8M x16 DECEMBER 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and
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IS45S81600E
IS45S16800E
128Mb
54-pin
IS45S16800E
2MX16X4
IS45S16800E-7CTNA1
is45s16800e-7tla2
IS45S16800E-6BLA
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is42s16320
Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed
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IS42S86400B
IS42S16320B,
IS45S16320B
512Mb
IS42/45S16320B
IS42/45S16320B
is42s16320
IS42S16320B-7BLI
is42s16320b
IS42S16320B-7TLI
IS42S86400B
IS42S86400B-7TL
IS42S16320B-7BL
MA3006
D1130
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5060 PLCC
Abstract: P432 PLCC-20 PLCC44 PLCC-44 PLCC-84 SO16W SO20 Small Outline SO-12 thermal resistance PLCC20
Text: APPLICATION NOTE THERMAL MANAGEMENT IN SURFACE MOUNTING The evolutionary trends of integrated circuits and printed circuits boards are, in both cases, towards improved performance and reduced size. From these points of view, a factor of major importance has
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IS42S16160G-5BL
Abstract: IS42S83200G IS42S16160G5BL
Text: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 JANUARY 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge
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IS42S83200G,
IS42S16160G
IS45S83200G,
IS45S16160G
32Meg
16Meg
256Mb
54-Pin
Alloy42
IS42S16160G-5BL
IS42S83200G
IS42S16160G5BL
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IS45S16400J
Abstract: No abstract text available
Text: IS42S16400J IS45S16400J 1 Meg Bits x 16 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge
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IS42S16400J
IS45S16400J
64-MBIT)
IS45S16400J-7BLA2
IS45S16400J-6CTLA2
IS45S16400J-6BLA2
54-ball
IS45S16400J
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TL494 car charger schematic diagram
Abstract: samsung galaxy s2 controller for PWM fan tl494 1A current to 0-5v voltage converter using LM317 SMD LD33 capacitor huang 2200uF 35V uc3843 flyback supply opto-coupler SMD MOSFET DRIVE 4606 schematic lcd inverter samsung sine wave inverter tl494 circuit diagram
Text: Micrel Semiconductor 1997 Databook 1 _ General Information 2 _ Computer Peripherals 3 _ Low-Dropout Linear Voltage Regulators 4 _ Switch-Mode Voltage Regulators 5 _ MOSFET Drivers 6 _
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accurat49565
TL494 car charger schematic diagram
samsung galaxy s2
controller for PWM fan tl494
1A current to 0-5v voltage converter using LM317
SMD LD33
capacitor huang 2200uF 35V
uc3843 flyback supply opto-coupler
SMD MOSFET DRIVE 4606
schematic lcd inverter samsung
sine wave inverter tl494 circuit diagram
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Laser Diode 405 nm Sharp
Abstract: LR36B15 LR388K4 Laser Diodes 405 nm catalog PQ1LAxx5MSPQ Series
Text: Electronic Components http://sharp-world.com/products/device/ March 2015 2015-03 CONTENTS TFT LCD 2 LCD Modules. 2 Imaging CMOS IMAGE SENSORS / CCDs 6 CMOS Camera Modules Road Map. 6
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HT9A23E
Laser Diode 405 nm Sharp
LR36B15
LR388K4
Laser Diodes 405 nm catalog
PQ1LAxx5MSPQ Series
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Spansion S29JL064
Abstract: No abstract text available
Text: S29JL064H 64 Megabit 8 M x 8-Bit/4 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory Data Sheet S29JL064H Cover Sheet For new designs involving Fine-pitch Ball Grid Array (FBGA) packages, S29PL064J supersedes S29JL064H and is the factory
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S29JL064H
16-Bit)
S29JL064H
S29PL064J
S29PL-J
Spansion S29JL064
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2DB1689-7
Abstract: J-STD-020D
Text: 2DB1689 LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage
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2DB1689
2DD2652)
OT-323
J-STD-020D
Alloy42
MIL-STD-202,
DS31639
2DB1689-7
J-STD-020D
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MX23256
Abstract: MX23256-15PC 27256 EPROM 25256 tny 178 tm 1640
Text: MACRONIX 34Ê INC MX23256/57 D • 5bööööE DDQD17Q 3 .EVI p r e l im in a r y 3 2 ,7 6 8 X 8 STATIC READ ONLY MEMORY T ^ - g - is FEATURES DESCRIPTION . 32,768 X 8-bit organization . Access time - 150 ns max . Current-Operating; 80 mA max Standby: 20 mA max
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DDQD17Q
MX23256/57
28-pin
MX23256
MX23257
MX23256/57
000sq.
MX23256-15PC
27256 EPROM
25256
tny 178
tm 1640
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PDF
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cordless phone ic
Abstract: POWER LINE FM INTERCOM
Text: MACRONIX INC HX8013 34E D • 5t.flflâfl2 D O D D n O «1 ■ Preliminary T-7S-07-15 CORDLESS PHONE IC BASE UNIT FEATURES: • • • • Reduce total component counts. Easy production and enhance productivity. Full CMOS design to save power and extend battery life.
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OCR Scan
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HX8013
T-7S-07-15
000sq.
cordless phone ic
POWER LINE FM INTERCOM
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PDF
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Untitled
Abstract: No abstract text available
Text: M A C RO NIX 34E IN C M X 2 3 1 0 2 4 S b a ô fiô a » Q O O G lb ? 3 EVIA PRELIM INARY 1 3 1 . 0 7 0 X 8 S T A T I C M E A D O N L Y MLI 1ÜIIY T 4 t-t3-1$ FEATURES D E S C R IP T IO N . 131,07 0 X 8 -b it organization . Access lime - ISO ns max , Current-Operating: 100 mA max
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26-pin
11X231024
000sq.
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PDF
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Untitled
Abstract: No abstract text available
Text: T- :- 34E D MACRONIX INC SbfifififiE □OQDl'ifi B • T'75-O?-iS MXBQ14 Preliminary_¡ V B A CORDLBRSS PHONE 1C HANDSET UNIT FEATURES: • • • • Reduce total component counts. Easy production and enhance productivity.
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OCR Scan
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MXBQ14
000sq.
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PDF
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INTEL 3226
Abstract: 1666B
Text: 34E D MACRONIX INC MX2332/33 St=00005 □QQDlt.3 L, p r e l im in a r y 4 0 9 6 X Ö STATIC READ ONLY MEMORY FEATURES DESCRIPTION . 4096 X 8-bit organization . Single +5V supply . Access time - 300 ns [max] . Totally static operation . Complete TTL compatible
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OCR Scan
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MX2332/33
MX2332
MX2333
MX2332/3
Interfa29
000sq.
INTEL 3226
1666B
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PDF
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LGTV
Abstract: equivalent transistor K 3531 k 3531 transistor tip 3035 transistor
Text: NACRONIX INC 34E D SbûûâfiS DOOGSGb i MX5001/ MX500XL 1 ^ 1 JÊ DIRECT CONNECT TELEPHONE LINE INTERFACE DAA T 'I S - C r r - q o APPLICATIONS FEATURES • Comp»cl PC board mountable telephone tine Interface module • Handles loop currents from 0 to
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MX5001/
000sq.
LGTV
equivalent transistor K 3531
k 3531 transistor
tip 3035 transistor
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Untitled
Abstract: No abstract text available
Text: 34E D MACRONIX INC Sbfißaö2 OQQQlbD 0 23C8192 i¥ IJ V 1,048,576x 8-bit CMOS ROM Description The 23C8192 is a 5V only, 8,338,608-bit, Read Only Memory. It is organized as 1,048,576 words by 8 bits per word, operates from a single 5V supply, has a static standby mode, and has an
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23C8192
23C8192
608-bit,
200ns.
000sq.
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mt 1389 fe
Abstract: MX16C452 MX16C452QC mt 1389 se MCR 65-6 ior scr scr mcr 525 DTM 995 6C452 BW 3010 T
Text: tIACRONIX INC 34E D • Sbôfiôô2 DDG0G33 4 ■ M X 16 C 452 _ _ 1 V I A DUAL ASYNCHRONOUS COMMUNICAHONS ELEMENT DESCRIPTION T h e M X 1 6C452 Is a dual u n i v e r s a l asynch r o no u s receiver and transmitter w i t h a b i d i r e c t i o n a l
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DDG0G33
6C452
56kHz,
mt 1389 fe
MX16C452
MX16C452QC
mt 1389 se
MCR 65-6
ior scr
scr mcr 525
DTM 995
BW 3010 T
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