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    HIA TRANSISTOR Search Results

    HIA TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HIA TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BF422

    Abstract: transistor bf422 BF420 BF421 BF423
    Text: AMER PHILIPS/D ISCR ETE bSE D • bbSBTBl DDS7bB4 bSb HIA PX D T 4 ¿ U A BF422 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelope primarily intended forclass-B video output stages in colour television and professional monitor equipment. P-N-P complements are BF421 and BF423.


    OCR Scan     		PDF DD27bà BF422 BF421 BF423. BF420 D027bflà BF422 transistor bf422 BF423

    2N341

    Abstract: MIL-S-1950U a1u transistor XLO6 2N3413 a1u marking 6 A1u marking transistor c 3206
    Text: M IL -S -19500/31C 1 June 1972 SUPERSEDING M IL -S -1 9 5 0 0 /3 1 B 21 Ja n u ary 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE. TRANSISTOR, NPN. SILICON, LOW-POWER T Y PE 2N341 T hia sp e c ific a tio n is approved fo r u se by all D e p a rt­ m e n ts and A gencies of th e D e p a rtm e n t of D efen se?-


    OCR Scan     		PDF MIL-S-19500 MIL-S-19500/31B 2N341 2N341 MIL-S-1950U a1u transistor XLO6 2N3413 a1u marking 6 A1u marking transistor c 3206

    2N5770

    Abstract: T0-92A T092A
    Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage


    OCR Scan     		PDF 2N5770 2N5770 T0-92A 625mW 300mW 60MHz -3-00C4C9 3MHS321 B0kfe947y T0-92A T092A

    Untitled

    Abstract: No abstract text available
    Text: T O -92 5YM5EMI SEM ICO N DU CTO R BC368, -25 Plastic Encapsulate Transistors TRANSISTOR NPN 1U /— 1 \ luopl 9Z FEATURE Power dissipation PCM : 1. EMITTER 0.625 W (Tamb=25 °C) 2. COLLECTOR Collector current IC M I A 1 3. BASE Collector base voltage


    OCR Scan     		PDF BC368, 270TYP 050TYP

    Untitled

    Abstract: No abstract text available
    Text: INI J 3-TERMINAL POSITIVE VOLTAGE GENERAL DESCRIPTION The NJU7202 series is a 100mA Output 3-terninaI positive voltage regulator which contains internal accurate voltage reference, error amplifier, control transistor outputvoltage setting resistor and shotdown prevention circuit.


    OCR Scan     		PDF NJU7202 100mA NJU7202L NJU7202U OT-89) T0-92) 100mA

    TRANSISTOR 1017

    Abstract: SAB 1018 P BFQ166
    Text: ^5 3* 1 3 1 DO eS lD Û b4T H A P X Philips Sem iconductors Product specification NPN 1 GHz video transistor BFQ166 N AMER P H I L I P S / D I S C R E T E FEATURES b?E ]>' PINNING • Low output capacitance • High gain bandwidth product PIN 1 DESCRIPTION


    OCR Scan     		PDF BFQ166 OT223 OT223. bb53T31 MRA599 TRANSISTOR 1017 SAB 1018 P BFQ166

    BS208

    Abstract: MB8075
    Text: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.


    OCR Scan     		PDF BS208 aTO-92 MB8075 iz7os34 003L011 BS208 MB8075

    7200L50

    Abstract: NJU7200 7200L15 7200l30
    Text: NJU7200 Series P R E L I M I NARY C-MOS 3-TER M INAL POSITIVE • GENERAL DESCRIPTION The NJU7200 series is a low drop out and C-MOS 3terminal positive voltage regulator which contains int­ ernal accurate voltage reference, error amplifier, control transistor and output voltage setting resistor.


    OCR Scan     		PDF NJU7200 7200L50 7200L15 7200l30

    2n5549

    Abstract: No abstract text available
    Text: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit


    OCR Scan     		PDF 2N5549

    PW-201

    Abstract: a1641 2044B 2SA1641 t313a 29261
    Text: Ordering number: EN 2926A N°-2926A a _ _ _ _ _ _ _ 2 S A 164 1 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Adoption of FBET, MBIT processes. Low saturation voltage. F ast switching speed. Large current capacity. Small and slim package making it easy to make 2SA1641-used set smaller


    OCR Scan     		PDF 2SA1641-used PW-201 a1641 2044B 2SA1641 t313a 29261

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings


    OCR Scan     		PDF Q68000-A8396 OT-89 5235bQ5 G122b23 fl53Sb05 E35Li05

    B0543C

    Abstract: No abstract text available
    Text: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS Copyright 1997, Power innovations Limited, UK • Designed for Complementary Use with the BD544 Series • 70 W at 25°C Case Temperature • 8 A Continuous Collector Current • 10 A Peak Collector Current


    OCR Scan     		PDF BD543, BD543A, BD543B, BD543C BD544 BD543 BD543A BD543S B0543C

    TLP120-4

    Abstract: E67349 TLP120 11-4c1 detector diode
    Text: GaAs IRED a PHOTO-TRANSISTOR T L P 1 2 , - 4 TLP120 U nit in mm PROGRAM MABLE CONTROLLERS TLP120 A C /D C -IN P U T M ODULE 6 Weight : 0.{ 4 TELECOM M UNICATION The TOSHIBA MINI FLAT COUPLER TLP120 and TLP120-4 is a small outline coupler, suitable for surface m ount assembly.


    OCR Scan     		PDF TLP120 TLP120) TLP120-4 3750Vrms UL1577, E67349 E67349 11-4c1 detector diode

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E D • b b S S ^ l 0Q3D7^S ^flT W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ _ _ GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF BUK553-100A/B O220AB BUK553

    BUK437-500B

    Abstract: No abstract text available
    Text: AMER PH IL IPS /DIS CRET E bTE T> • b b S 3 R 31 OOBDMôS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF bbS3R31 BUK437-500B btS3T31

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor BUK565-60A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface


    OCR Scan     		PDF BUK565-60A BUK565-60A

    bc 103 transistor

    Abstract: bc 106 transistor transistor BC 549 transistor bc 103 bc 104 npn transistor transistor bc 102 transistor c 548 of bc 547 b transistor bc 546 transistor Bc 580
    Text: HN / BC 546.549 NPN Silicon Expitaxial Planar Transistor These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549


    OCR Scan     		PDF BC546 BC547 BC548 BC549 BC556. BC559 100mA bc 103 transistor bc 106 transistor transistor BC 549 transistor bc 103 bc 104 npn transistor transistor bc 102 transistor c 548 of bc 547 b transistor bc 546 transistor Bc 580

    APT45G100BN

    Abstract: No abstract text available
    Text: ADVANCED POIdER T E C H N O L O G Y bl E □ 2 5 7 ^ 0*1 OOOOfl'i'ï flb? D A d van ced po w er Tec h n o lo g y * APT45G100BN 1000V 45A POWER MOS IV IGBT N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS


    OCR Scan     		PDF APT45G100BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK474-400B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF 711042b BUK474-400B -SOT186A 7110flgb

    BUK437-500B

    Abstract: J812 DD304 HIA TRANSISTOR
    Text: N Afl ER PHILIPS/DISCRETE bTE T> m bbS3R31 □Q3DM6S Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bbS3R31 BUK437-500B btS3T31 BUK437-500B J812 DD304 HIA TRANSISTOR

    I138

    Abstract: 2SA512 2SC512 23A513
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF rbb-250pS I138 2SA512 2SC512 23A513

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHX3N40E OT186A PHX3N40E

    LP2S

    Abstract: BUK545-50A 40608G
    Text: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF BUK575-60A/B BUK545-50A/B 711Dfl2b DG44724 BUK575 LP2S BUK545-50A 40608G

    transistor tt 2222

    Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
    Text: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,


    OCR Scan     		PDF BLY92C/01 OT122F PINNING-SOT122F_ MBB012 transistor tt 2222 C7f TRANSISTOR BLY92C BLY92C/01 BLY92