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    HGTP12N60B3 Search Results

    HGTP12N60B3 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTP12N60B3 Fairchild Semiconductor 27A, 600V, UFS Series N-Channel IGBTs Original PDF
    HGTP12N60B3 Fairchild Semiconductor 27A, 600V, UFS N-Channel IGBT Original PDF
    HGTP12N60B3 Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTP12N60B3 Intersil 27A, 600V, UFS Series N-Channel IGBTs Original PDF
    HGTP12N60B3 Intersil Obsolete Product Datasheet Scan PDF
    HGTP12N60B3 Intersil 27 A, 600V, UFS Series N-Channel lGBTs Scan PDF
    HGTP12N60B3D Fairchild Semiconductor 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTP12N60B3D Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTP12N60B3D Intersil 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode Original PDF
    HGTP12N60B3D Intersil 27 A, 600V, UFS Series N-Channel lGBTs with Anti-Parallel Hyperfast Diode Scan PDF

    HGTP12N60B3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G12N60b3

    Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A
    Text: HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S 150oC. 112ns 150oC G12N60b3 g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT ТРАНЗИСТОРЫ Наименование HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 HGTP3N60B3 HGTP7N60B3 HGTP7N60B3D IRG4BC20UD IRG4BC30F IRG4BC30U IRG4BC30UD


    Original     		HGTD3N60B3S HGTG12N60B3 HGTG12N60B3D HGTG12N60C3D HGTG30N60B3 HGTP12N60B3 HGTP12N60B3D HGTP14N36G3VL HGTP14N40F3VL HGTP20N60B3 PDF

    HGTP12N60B3D

    Abstract: 12N60B3 12n60b TA49188 TB334 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DST HGTG12N60B3D
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet September 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. HGTP12N60B3D 12N60B3 12n60b TA49188 TB334 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DST HGTG12N60B3D PDF

    HGT1S12N60B3S

    Abstract: G12N60B3 HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 g12n60
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60B3 HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 g12n60 PDF

    12n60b3d

    Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. HGT1S12N60B3DS 12n60b3d HGTP12N60B3D HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334 PDF

    TA49171

    Abstract: IGBT JUNCTION TEMPERATURE CALCULATION
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. TA49171 IGBT JUNCTION TEMPERATURE CALCULATION PDF

    12n60b3d

    Abstract: HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of


    Original     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. 12n60b3d HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the


    Original     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. TA49171. PDF

    12N60B3D

    Abstract: HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS Semiconductor 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices


    Original     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. 12N60B3D HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334 PDF

    G12N60

    Abstract: 4410 mosfet G12N60b3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 TA49171
    Text: HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    Original     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S 150oC. G12N60 4410 mosfet G12N60b3 HGT1S12N60B3S9A HGTP12N60B3D TB334 TA49171 PDF

    G12N60B3

    Abstract: HGT1S12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60
    Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S Semiconductor 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    Original     		HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 150oC. 112ns 150oC TB334 G12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60 PDF

    717 MOSFET

    Abstract: No abstract text available
    Text: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    Original     		HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 HGT1S12N60B3S 150oC. 1-800-4-HARRIS 717 MOSFET PDF

    12N60B3

    Abstract: 12n60b3d
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices


    Original     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. 1-800-4-HARRIS 12N60B3 12n60b3d PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    INDUCTION HEATING

    Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
    Text: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)


    Original     		HGT1N30N60A4D HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 SGF23N60UFD SGF15N60RUFD SGF40N60UF INDUCTION HEATING induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D PDF

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S PDF

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


    Original     		PDF

    12n60b3d

    Abstract: 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS in t e r r ii J a n u a ry . Data Sheet 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar


    OCR Scan     		12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 12n60b3d 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334 PDF

    G12N60b3

    Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
    Text: in t e HGTP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have


    OCR Scan     		HGTP12N60B3, HGT1S12N60B3S HGTP12N60B3 HGT1S12N60B3S TA49171ration G12N60b3 G12N60B HGT1S12N60B3S9A HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ PDF

    MJ-112

    Abstract: T1S12 mosfet 600v 10a to-220ab
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS HARRIS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description This family of MOS gated high voltage switching devices com bine the best features of MOSFETs and bipolar transis­


    OCR Scan     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS MJ-112 T1S12 mosfet 600v 10a to-220ab PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS uADQie rw o S E M I C rtru O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Description Features This fam ily of MOS gated high voltage switching devices


    OCR Scan     		HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS TA49171. TA49188. 1-800-4-HARRIS PDF

    DIODE 3LU

    Abstract: DIODE 3LU 32 DIODE 3LU 35 3lu diode
    Text: HARFR IS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 25°C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    OCR Scan     		HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 112ns 1-800-4-HARRIS DIODE 3LU DIODE 3LU 32 DIODE 3LU 35 3lu diode PDF

    G12N60B3

    Abstract: TO-262AA Package equivalent
    Text: HARRIS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 2 5 °C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the


    OCR Scan     		HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S HGT1S12N60B3 HGT1S12N60B3S 1-800-4-HARRIS G12N60B3 TO-262AA Package equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS GENERATION III ULTRA-FAST SWITCHING "UFS" IGBT FUTURE PRODUCTS o J\X Ju TO-252AA TO-220AB TO-247 600V HGTD5N60B3 HGTD7N60B3 HGTD5N60B3S HGTD7N60B3S HGTP12N60B3 HGTG30N60B3 HGTG40N60B3 1200V HGTD4N120B3 HGTD6N120B3 HGTD4N120B3S HGTD6N120B3S HGTP10N120B3


    OCR Scan     		O-251AA HGTD5N60B3 HGTD7N60B3 HGTD4N120B3 HGTD6N120B3 O-252AA HGTD5N60B3S HGTD7N60B3S HGTD4N120B3S HGTD6N120B3S PDF