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    HGTD7N60B3S Price and Stock

    Rochester Electronics LLC HGTD7N60B3S

    14A, 600V, UFS N-CHANNEL IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HGTD7N60B3S Bulk 398
    • 1 -
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    • 1000 $0.75
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    Harris Semiconductor HGTD7N60B3S

    14A, 600V, UFS N-Channel IGBT '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTD7N60B3S 703 1
    • 1 $0.7258
    • 10 $0.7258
    • 100 $0.6823
    • 1000 $0.6169
    • 10000 $0.6169
    		Buy Now

    HGTD7N60B3S Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HGTD7N60B3S Fairchild Semiconductor 600V, UFS Series N-Channel IGBT Original PDF
    HGTD7N60B3S Fairchild Semiconductor 14A, 600V, UFS N-Channel IGBT Original PDF
    HGTD7N60B3S Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTD7N60B3S Intersil 14A, 600V, UFS Series N-Channel IGBTs Original PDF
    HGTD7N60B3S Intersil 14A, 600V, UFS Series N-Channel lGBTs Scan PDF
    HGTD7N60B3S9A Fairchild Semiconductor 14A, 600V, UFS N-Channel IGBT Original PDF

    HGTD7N60B3S Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    G7N60B3

    Abstract: G7N60B HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 G7N60 Igbts guide TA49190
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2002 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S 150oC. HGTP7N60B3 G7N60B3 G7N60B HGTD7N60B3S HGTD7N60B3S9A RHRD660 G7N60 Igbts guide TA49190 PDF

    G7N60B3

    Abstract: G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 HGT1S7N60B3S
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S G7N60B3 G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 PDF

    G7N60B3

    Abstract: G7N60B HGT1S7N60B3 HGT1S7N60B3S HGTD7N60B3 HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 Semiconductor 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, TC = 25oC The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high


    Original     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 G7N60B3 G7N60B HGT1S7N60B3 HGTD7N60B3 HGTD7N60B3S HGTD7N60B3S9A PDF

    g7n60b3

    Abstract: g7N60B G7N60
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, TC = 25oC The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high


    Original     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 g7n60b3 g7N60B G7N60 PDF

    G7N60B3

    Abstract: G7N60 G7N60B HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 TA49190
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    Original     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S G7N60B3 G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 RHRD660 TA49190 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    P channel 600v 20a IGBT

    Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
    Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3 PDF

    INDUCTION HEATING

    Abstract: induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D
    Text: Discrete Discrete IGBTs BVCES Min V IC@100°C (A) VCE(sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-in Diode 400 130 4.5 1500 No No Camera Strobe HGT1N30N60A4D 600 60 1.8 38 No Yes Power Conversion (SMPS Series) HGT1N40N60A4D 600 63 1.7 35 No Yes Power Conversion (SMPS Series)


    Original     		HGT1N30N60A4D HGT1N40N60A4D HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 SGF23N60UFD SGF15N60RUFD SGF40N60UF INDUCTION HEATING induction heating ic high power Induction Heating FGK60N6S2D HGT1S12N60C3S SGS5N150UF HGT1S5N120BNDS SGS13N60UFD SGH10N120RUF HGT1N30N60A4D PDF

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 PDF

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S PDF

    RURU8060

    Abstract: 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor
    Text: IGBT and Rectifier Selection Guide February 2002 Discrete IGBTs 1 Automotive Ignition IGBTs 6 IGBT Smart Power Modules SPM 7 IGBT Modules 8 HyperFast/UltraSoft Recovery Rectifiers (Stealth Family) 9 HyperFast Recovery Rectifiers 10 UltraFast Recovery Rectifiers


    Original     		FGS15N40L OT-227 HGT1N30N60A4D HGT1N40N60A4D O-220 HGTP3N60C3 HGTP3N60C3D SGP6N60UF SGP6N60UFD HGTP3N60B3 RURU8060 3 phase motor control FM2G75US60 1N4004 SMA smps welding machine Piezoelectric 1Mhz FFPF60B150DS INDUCTION HEATING SGS5N150UF 150 KW motor PDF

    mosfet 1200V 40A

    Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
    Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA


    Original     		LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    HGTG30N60A4

    Abstract: HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S
    Text: IGBT Selection Guide TM 600V FAMILIES NOTE 1 IC RATED OR IC AT 110oC 3A TO-252AA (D-PAK) TO-220AB TO-263AB (D2-PAK) HGTD3N60A4S 2.7V 100ns HGTP3N60A4 2.7V 100ns HGT1S3N60A4S 2.7V 100ns HGTD3N60B3S 2.1V 175ns HGTP3N60B3 2.1V 175ns HGT1S3N60B3S 2.1V 175ns


    Original     		110oC O-220AB O-263AB HGTD3N60A4S 100ns HGTP3N60A4 HGT1S3N60A4S HGTD3N60B3S HGTG30N60A4 HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S PDF

    g7n60b3

    Abstract: g7N60B G7N60 C110 HGT1S7N60B3S HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3
    Text: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 in t e r r ii J a n u a ry . m Data Sheet 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These


    OCR Scan     		HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 g7n60b3 g7N60B G7N60 C110 HGTD7N60B3S HGTD7N60B3S9A PDF

    Untitled

    Abstract: No abstract text available
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HADDIQ S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, T C = 25°C The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high volt­


    OCR Scan     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS GENERATION III ULTRA-FAST SWITCHING "UFS" IGBT FUTURE PRODUCTS o J\X Ju TO-252AA TO-220AB TO-247 600V HGTD5N60B3 HGTD7N60B3 HGTD5N60B3S HGTD7N60B3S HGTP12N60B3 HGTG30N60B3 HGTG40N60B3 1200V HGTD4N120B3 HGTD6N120B3 HGTD4N120B3S HGTD6N120B3S HGTP10N120B3


    OCR Scan     		O-251AA HGTD5N60B3 HGTD7N60B3 HGTD4N120B3 HGTD6N120B3 O-252AA HGTD5N60B3S HGTD7N60B3S HGTD4N120B3S HGTD6N120B3S PDF

    G7N60B3

    Abstract: g7N60B EM- 546 motor
    Text: HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HARRIS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 14A, 600V, T C = 2 5 °C The HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high volt­


    OCR Scan     		HGTD7N60B3, HGTD7N60B3S, HGT1S7N60B3, HGT1S7N60B3S, HGTP7N60B3 HGT1S7N60B3S HGTP7N60B3 G7N60B3 g7N60B EM- 546 motor PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF