Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    HGTG15N120C3D Search Results

    HGTG15N120C3D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HGTG15N120C3D Harris Semiconductor 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF
    HGTG15N120C3D Harris Semiconductor 600V / 1200V UFS Series IGBTs Original PDF
    HGTG15N120C3D Intersil 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF

    HGTG15N120C3D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    15N120C3D

    Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C
    Text: HGTG15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance


    Original     		PDF HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 15N120C3D LD26 RHRP15120 15N120C

    15N120C3D

    Abstract: 15N120C3 HGTG15N120C3D LD26 RHRP15120 15N120C
    Text: HGTG15N120C3D S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The HGTG15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		PDF HGTG15N120C3D HGTG15N120C3D 150oC. 150oC 350ns 1-800-4-HARRIS 15N120C3D 15N120C3 LD26 RHRP15120 15N120C

    P channel 600v 20a IGBT

    Abstract: hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3
    Text: HGTG20N60C3R HGTG20N60C3DR 2.3V TBD µJ HGTG30N60C3R HGTG30N60C3DR 2.3V TBD µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		PDF HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG30N60C3R P channel 600v 20a IGBT hg*20n60 600v HGTG30N60C3D 1200v 20a IGBT 1200v 30A to247 LC96585 UFS Series P-Channel HGTD3N60B3 HGTD3N60C3

    HGTP7N60B3D

    Abstract: 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S
    Text: 2-3 HGTG20N60C3R HGTG20N60C3DR 2.3V 3000µJ HGTG27N60C3R HGTG27N60C3DR 2.3V 2000µJ HGTG20N60B3 HGTG20N60B3D 2.0V 1050µJ HGTG30N60B3 HGTG30N60B3D 2.2V 1700µJ HGTG40N60B3 2.0V 2500µJ HGTG20N60C3 HGTG20N60C3D 1.8V 1500µJ HGTG30N60C3 HGTG30N60C3D 1.8V 2500µJ


    Original     		PDF HGTD3N60C3 HGTD7N60C3 HGTD3N60C3R HGTD7N60C3R 200ns HGTD3N60B3 HGTD7N60B3 HGTG20N60C3R HGTG20N60C3DR HGTG27N60C3R HGTP7N60B3D 1200v diode to247 1200v 30A to247 TO220AB IGBT 1200v HGTD3N60C3R DIODE 3A 600V HGTD3N60B3 HGTD3N60C3 HGTD3N60C3RS HGTD7N60B3S

    Untitled

    Abstract: No abstract text available
    Text: HGTG15N120C3D S E M I C O N D U C T O R " " m • w ■ mM v 35A, 1200V, UFS Series N-C hannel IGBT w ith A nti-Parallel H yperfast Diode May 1997 Features Description • 35A, 1200V at T c = 25°C The HGTG15N120C3D is a MOS gated high voltage switch­ ing device combining the best features of MOSFETs and


    OCR Scan     		PDF HGTG15N120C3D HGTG15N120C3D 350ns 1-800-4-HARRIS

    10A600V

    Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
    Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU


    OCR Scan     		PDF HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V

    247EH

    Abstract: No abstract text available
    Text: M S E A R R I S H M I C O N D U C T O R G T G 1 5 N 1 2 C 3 D 35A, 1200V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e M ay 1997 Features Description • 35A, 1 200V at T c = 2 5 ° C T h e H G T G 1 5 N 1 2 0 C 3 D is a M O S gated high vo lta g e s w itc h ­


    OCR Scan     		PDF