15N120C3D
Abstract: HGTG15N120C3D LD26 RHRP15120 15N120C
Text: 15N120C3D 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The 15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance
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HGTG15N120C3D
HGTG15N120C3D
150oC.
150oC
350ns
15N120C3D
LD26
RHRP15120
15N120C
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15N120C3D
Abstract: 15N120C3 HGTG15N120C3D LD26 RHRP15120 15N120C
Text: 15N120C3D S E M I C O N D U C T O R 35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1997 Features Description • 35A, 1200V at TC = 25oC The 15N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and
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Original
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PDF
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HGTG15N120C3D
HGTG15N120C3D
150oC.
150oC
350ns
1-800-4-HARRIS
15N120C3D
15N120C3
LD26
RHRP15120
15N120C
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Untitled
Abstract: No abstract text available
Text: 15N120C3D S E M I C O N D U C T O R " " m • w ■ mM v 35A, 1200V, UFS Series N-C hannel IGBT w ith A nti-Parallel H yperfast Diode May 1997 Features Description • 35A, 1200V at T c = 25°C The 15N120C3D is a MOS gated high voltage switch ing device combining the best features of MOSFETs and
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OCR Scan
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PDF
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HGTG15N120C3D
HGTG15N120C3D
350ns
1-800-4-HARRIS
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247EH
Abstract: No abstract text available
Text: M S E A R R I S H M I C O N D U C T O R G T G 1 5 N 1 2 C 3 D 35A, 1200V, U F S S e r i e s N - C h a n n e l I G B T with A n t i- P a r a ll e l H y p e r f a s t D i o d e M ay 1997 Features Description • 35A, 1 200V at T c = 2 5 ° C T h e H G T G 1 5 N 1 2 0 C 3 D is a M O S gated high vo lta g e s w itc h
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