CGHV1J006D
Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high
|
Original
|
CGHV1J006D
CGHV1J006D
18GHz
E7703
transistor j813
G40V4
hemt .s2p
B 1318
191986
high power transistor s-parameters
cree gate resistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and
|
Original
|
CGHV1F006S
CGHV1F006S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high
|
Original
|
CGHV1J006D
CGHV1J006D
18GHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band
|
Original
|
CGHV40030
CGHV40030
CGHV40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
|
Original
|
CLF1G0035S-100
CLF1G0035S-100
|
PDF
|
I1228
Abstract: No abstract text available
Text: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
|
Original
|
CLF1G0035-100
CLF1G0035-100
I1228
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.
|
Original
|
CLF1G0035S-50
CLF1G0035S-50
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave
|
Original
|
CGH40006S
CGH40006S
CGH40006S,
CGH40
|
PDF
|
RO5880
Abstract: CGH40006S CGH40006S-TB transistor 0879 48 Ohms Resistors CGS
Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave
|
Original
|
CGH40006S
CGH40006S
CGH40006S,
CGH40
RO5880
CGH40006S-TB
transistor 0879
48 Ohms Resistors CGS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave
|
Original
|
CGH40006S
CGH40006S
CGH40006S,
CGH40
|
PDF
|
J945
Abstract: No abstract text available
Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave
|
Original
|
CGH40006S
CGH40006S
CGH40006S,
CGH40
J945
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MECGaNC30 4 to 6 GHz GaN HEMT Power Amplifier Main Features 0.25µm GaN HEMT Technology 4.1 – 5.9 GHz full performances Frequency Range 30W Output Power @ Pin 27.5 dBm 37% PAE @ Pin 27.5 dBm 30% PAE @ Pout 20 Watt 27 dB Small Signal Gain Bias: Vd = 28V, Id = 1A, Vg = -3V Typ.
|
Original
|
MECGaNC30
MECGaNC30
|
PDF
|
CGH40006
Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
|
Original
|
CGH40006P
CGH40006
CGH40006,
CGH40
f 14019 amplifier
CGH40006P-TB
transistor j352
cgh40006p
006P
RO5880
J352
16649
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
|
Original
|
CGH40006P
CGH40006P
CGH40006P,
CGH40
|
PDF
|
|
|
CGH40006P-TB
Abstract: RO5880 006P CGH40006P JESD22 CGH40006
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
|
Original
|
CGH40006P
CGH40006P
CGH40006P,
CGH40
CGH40006P-TB
RO5880
006P
JESD22
CGH40006
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
|
Original
|
CGH40006P
CGH40006P
CGH40006P,
CGH40
|
PDF
|
CGH40006P
Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
|
Original
|
CGH40006P
CGH40006P
CGH40006P,
CGH40
1878 TRANSISTOR
RO5880
CGH4000
CGH40006P-TB
|
PDF
|
cgh40006p
Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and
|
Original
|
CGH40006P
CGH40006P
CGH40006P,
CGH40
RO5880
J427
CGH40006P-TB
Cree Microwave
006P
JESD22
1878 TRANSISTOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%
|
Original
|
NPTB00004A
NPTB00004
NPTB00004A
NDS-036
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPTB00004Q Advanced Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >60%
|
Original
|
NPTB00004Q
NPTB00004Q
NDS-041
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%
|
Original
|
NPTB00004A
NPTB00004
NPTB00004A
NDS-036
|
PDF
|
TGA2576-FL
Abstract: GaN hemt TGA2576
Text: TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features • • • • • • Functional Block Diagram Frequency Range: 2.5 – 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm
|
Original
|
TGA2576-FL
TGA2576-FL
GaN hemt
TGA2576
|
PDF
|
TGA2576
Abstract: No abstract text available
Text: TGA2576 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features • • • • • • Functional Block Diagram Frequency Range: 2.5 – 6 GHz Power: 46 dBm Psat @ Pin 26 dBm
|
Original
|
TGA2576
TGA2576
|
PDF
|
2SK566
Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
Text: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET
|
OCR Scan
|
2SK676
power12
GD02137
T-31-25
12GHz
2SK566
2SK989
2SK677
2SK587
3SK165
2SK67-6
2SK9
2SK677-2
2SK676-1
|
PDF
|
