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    HEMT 6 GHZ Search Results

    HEMT 6 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLF1G0035-200P Rochester Electronics Broadband RF power GaN HEMT Visit Rochester Electronics Buy
    CLF1G0035-100P Rochester Electronics LLC CLF1G0035-100 - 100W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060-30 Rochester Electronics LLC CLF1G0060-30 - 30W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0035-50 Rochester Electronics LLC CLF1G0035-50 - 50W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy
    CLF1G0060S-10 Rochester Electronics LLC CLF1G0060S-10 - 10W Broadband RF power GaN HEMT Visit Rochester Electronics LLC Buy

    HEMT 6 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGHV1J006D

    Abstract: transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz E7703 transistor j813 G40V4 hemt .s2p B 1318 191986 high power transistor s-parameters cree gate resistor

    Untitled

    Abstract: No abstract text available
    Text: CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S, C, X and


    Original     		PDF CGHV1F006S CGHV1F006S

    Untitled

    Abstract: No abstract text available
    Text: CGHV1J006D 6 W, 18.0 GHz, GaN HEMT Die Cree’s CGHV1J006D is a high voltage gallium nitride GaN High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 m gate length fabrication process. This GaN-on-SiC product offers superior high


    Original     		PDF CGHV1J006D CGHV1J006D 18GHz

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band


    Original     		PDF CGHV40030 CGHV40030 CGHV40

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.


    Original     		PDF CLF1G0035S-100 CLF1G0035S-100

    I1228

    Abstract: No abstract text available
    Text: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.


    Original     		PDF CLF1G0035-100 CLF1G0035-100 I1228

    Untitled

    Abstract: No abstract text available
    Text: CLF1G0035S-50 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-50 is a broadband general purpose 50 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.


    Original     		PDF CLF1G0035S-50 CLF1G0035S-50

    Untitled

    Abstract: No abstract text available
    Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave


    Original     		PDF CGH40006S CGH40006S CGH40006S, CGH40

    RO5880

    Abstract: CGH40006S CGH40006S-TB transistor 0879 48 Ohms Resistors CGS
    Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave


    Original     		PDF CGH40006S CGH40006S CGH40006S, CGH40 RO5880 CGH40006S-TB transistor 0879 48 Ohms Resistors CGS

    Untitled

    Abstract: No abstract text available
    Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave


    Original     		PDF CGH40006S CGH40006S CGH40006S, CGH40

    J945

    Abstract: No abstract text available
    Text: CGH40006S 6 W, RF Power GaN HEMT, Plastic Cree’s CGH40006S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave


    Original     		PDF CGH40006S CGH40006S CGH40006S, CGH40 J945

    Untitled

    Abstract: No abstract text available
    Text: MECGaNC30 4 to 6 GHz GaN HEMT Power Amplifier Main Features 0.25µm GaN HEMT Technology 4.1 – 5.9 GHz full performances Frequency Range 30W Output Power @ Pin 27.5 dBm 37% PAE @ Pin 27.5 dBm 30% PAE @ Pout 20 Watt 27 dB Small Signal Gain Bias: Vd = 28V, Id = 1A, Vg = -3V Typ.


    Original     		PDF MECGaNC30 MECGaNC30

    CGH40006

    Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006 CGH40006, CGH40 f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    CGH40006P-TB

    Abstract: RO5880 006P CGH40006P JESD22 CGH40006
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 CGH40006P-TB RO5880 006P JESD22 CGH40006

    Untitled

    Abstract: No abstract text available
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40

    CGH40006P

    Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB

    cgh40006p

    Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
    Text: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and


    Original     		PDF CGH40006P CGH40006P CGH40006P, CGH40 RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%


    Original     		PDF NPTB00004A NPTB00004 NPTB00004A NDS-036

    Untitled

    Abstract: No abstract text available
    Text: NPTB00004Q Advanced Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •    Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >60%


    Original     		PDF NPTB00004Q NPTB00004Q NDS-041

    Untitled

    Abstract: No abstract text available
    Text: NPTB00004A Gallium Nitride 28V, 5W, DC-6 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from DC-6 GHz 28V Operation Industry Standard Plastic Package High Drain Efficiency >55%


    Original     		PDF NPTB00004A NPTB00004 NPTB00004A NDS-036

    TGA2576-FL

    Abstract: GaN hemt TGA2576
    Text: TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features • • • • • • Functional Block Diagram Frequency Range: 2.5 – 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm


    Original     		PDF TGA2576-FL TGA2576-FL GaN hemt TGA2576

    TGA2576

    Abstract: No abstract text available
    Text: TGA2576 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier Product Features • • • • • • Functional Block Diagram Frequency Range: 2.5 – 6 GHz Power: 46 dBm Psat @ Pin 26 dBm


    Original     		PDF TGA2576 TGA2576

    2SK566

    Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
    Text: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET


    OCR Scan     		PDF 2SK676 power12 GD02137 T-31-25 12GHz 2SK566 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1