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    2SK566

    Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
    Text: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET


    OCR Scan     		2SK676 power12 GD02137 T-31-25 12GHz 2SK566 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1 PDF