HE8807SG
Abstract: HE8807FL
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL
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HE8807SG/FL
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG
HE8807FL
HE8807SG
HE8807FL
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radiation
Abstract: No abstract text available
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL
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HE8807SG/FL
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8407SG:
HE8407FL:
radiation
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Hitachi DSA002726
Abstract: No abstract text available
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807FL
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HE8807SG/FL
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8407SG:
HE8407FL:
HE8807SG
HE8807FL
Hitachi DSA002726
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Untitled
Abstract: No abstract text available
Text: HE8807SG/FL ODE-208-050A Z Rev.1 Feb. 01, 2008 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1
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HE8807SG/FL
ODE-208-050A
HE8807SG/FL
HE8807SG:
HE8807FL)
HE8807SG)
HE8807FL:
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opnext
Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-090103
opnext
HL1359CP
laser diode bare chip 1550
DFB laser bare die
HL1357CP
HL1511AF
HL1513AF
laser diode for optical communication
Laser Diode 1550 nm dBm
dfb 10g
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hitachi DC9300
Abstract: 1550nm Laser Diode with butterfly pin package DC9300 1550nm Laser Diode butterfly hitachi HL7851G DR9301 780nm 10mW laser diodes LB7671 RCV5932 laser DFB 1550nm 10mW
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage, Hitachi offers a complete line-up of 635nm to 830nm laser diodes
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
hitachi DC9300
1550nm Laser Diode with butterfly pin package
DC9300
1550nm Laser Diode butterfly
hitachi HL7851G
DR9301
780nm 10mW laser diodes
LB7671
RCV5932
laser DFB 1550nm 10mW
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HE8807FL
Abstract: HE8807SG
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998A Z Rev.1 Jan. 2003 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width
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HE8807SG/FL
ODE-208-998A
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
HE8807FL
HE8807SG
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LD5033
Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Text: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet
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OPD-010908
LD5033
opnext
HL6366DG
opnext l
HL8340MG A
785nm
HL6545MG
660nm 100mw
HL8341MG
HL6313G
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Semiconductor Nuclear Radiation Detector
Abstract: HE8807FL HE8807SG nuclear radiation detector Hitachi DSA0047
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ADE-208-998 Z 1st Edition Dec. 2000 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency
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HE8807SG/FL
ADE-208-998
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
Semiconductor Nuclear Radiation Detector
HE8807FL
HE8807SG
nuclear radiation detector
Hitachi DSA0047
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HE8807FL
Abstract: HE8807SG Semiconductor Nuclear Radiation Detector
Text: HE8807SG/FL ODE-208-050 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1
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HE8807SG/FL
ODE-208-050
HE8807SG/FL
HE8807SG:
HE8807FL:
HE8807FL)
HE8807SG)
HE8807FL
HE8807SG
Semiconductor Nuclear Radiation Detector
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Semiconductor Nuclear Radiation Detector
Abstract: Hitachi DSA0087 HE8807FL HE8807SG 208998
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ADE-208-998 Z 1st Edition Dec. 2000 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • High output, high efficiency • Narrow spectral width
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HE8807SG/FL
ADE-208-998
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
Semiconductor Nuclear Radiation Detector
Hitachi DSA0087
HE8807FL
HE8807SG
208998
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opnext
Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Text: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring
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D-85622
opdb-09
opnext
laser diode DVD 100mw
opnext laser diode
660nm 100mw
HL6348MG
HL1357CP
HL1511AF
HL1513AF
HL6314MG
1310nm fp 10g
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laser diode 940 nM 200mW
Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Text: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and
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200mW
laser diode 940 nM 200mW
LD5033
80km* opnext
ps7055
LE7062
laser DFB chip 1310nm 2.5G
LB7962
10G APD chip
HL6530MG
Photodiode, 1550nm, butterfly package
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Untitled
Abstract: No abstract text available
Text: HE8807SG/FL GaAlAs Infrared Emitting Diodes ODE-208-998B Z Rev.2 Mar. 2005 Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • High output, high efficiency
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HE8807SG/FL
ODE-208-998B
HE8807SG/FL
HE8807FL)
HE8807SG)
HE8807SG:
HE8807FL:
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RCV5932
Abstract: DR9301 LB7671 laser DFB 1550nm 10mW single hitachi DC9300 Photodiode, 1550nm, butterfly package laser DFB 1550nm 10mW DC9300 Arrayed Waveguide Grating 1550nm Laser Diode with butterfly pin package
Text: C 1998 Dirk Plha HITACHI OPTOELECTRONIC DEVICES HITACHI OPTODEVICES • Industrial and Information Laser Diodes For laser levellers, alignment systems, bar code readers, distance measurement and optical storage DVD-RAM , Hitachi offers a complete line-up of 635nm to 830nm
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635nm
830nm
HE7601
HE8404
HE8807
HE8811
HE8812
HE7601SG
HE8404SG
RCV5932
DR9301
LB7671
laser DFB 1550nm 10mW single
hitachi DC9300
Photodiode, 1550nm, butterfly package
laser DFB 1550nm 10mW
DC9300
Arrayed Waveguide Grating
1550nm Laser Diode with butterfly pin package
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OPR 12 PHOTOCELL
Abstract: photocell opr 12 HL7836MG HE8807CL cake power hitachi HL7851G HL7851 10G APD chip "Hitachi, Ltd., 1997" Hitachi laser diodes IR Pulsed
Text: Hitachi Optodevice Data Book ADE-408-001E Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In
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ADE-408-001E
HR1201CX
OPR 12 PHOTOCELL
photocell opr 12
HL7836MG
HE8807CL
cake power
hitachi HL7851G
HL7851
10G APD chip
"Hitachi, Ltd., 1997"
Hitachi laser diodes IR Pulsed
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diode
Abstract: No abstract text available
Text: Part Numbers-Hitachi optoelectronic device part numbers indicate the following: Package type Chip structure, characteristics Emitting wavelength f Ex.; 780 nm band: 78 I 1300 nm band: 13 Product type Laser diode: L Infreared
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HE8807FL
diode
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HL7806
Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Text: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G
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HL6314M
HL6316G
HL6411G*
HL6315G
HL6312G
6313G
HL6720G
HL6724M
HL6712G
HL6722G
HL7806
6808X
L7851
hl7852
HL6411G
HL8325G
hitachi HL7852
hl7806g
HL7851
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HE8807CL
Abstract: HE8807FL
Text: HE8807SG/CL/FL GaAIAs Infrared Emitting Diodes Description The H E 8807S G /C L /F L are sin gle heterojunction structure G aA IA s light em itting d iod es with a w avelen gth o f 880 nm. Features • • • • H igh output, high efficien cy Narrow spectral width
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HE8807SG/CL/FL
8807S
8807C
HE8807SG:
HE8807CL:
HE8807FL:
HE8807SG)
HE8807CL)
HE8807CL
HE8807FL
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Untitled
Abstract: No abstract text available
Text: HE8807SG/SL/CL/FL GaAIAs IRED Description The H E8807SG /SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity H E8807SL/CL/FL
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HE8807SG/SL/CL/FL
E8807SG
E8807SL/CL/FL)
E8807SG
HE8807SG:
HE8807SL:
HE8807CL:
HE8807FL:
HE8807SL)
HE8807SG)
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HL7806
Abstract: HE8807CL HL7812G HE8811 HL7812 he130
Text: Package Variations Laser Diodes Packages Open-air type rar Features Applicable Products ’ For experimental use •For module assembly HLP5400, HL1322A, HL1341A, HL1362A, HL1521A, HL1541A, HL1551A ■For module assembly • Chip carrier stem HL1321AC, HL1322AC, HL1341AC,
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HLP5400,
HL1322A,
HL1341A,
HL1362A,
HL1521A,
HL1541A,
HL1551A
HL1321AC,
HL1322AC,
HL1341AC,
HL7806
HE8807CL
HL7812G
HE8811
HL7812
he130
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HE8807CL
Abstract: XP20W
Text: HE8807SG/SL/CL/FL GaAIAs IRED Description The HE8807SG/SL/CL/FL are 880 nm band GaAIAs infrared light emitting diodes with a single hetero junction structure. Features • • • • • High output, high efficiency Narrow spectral width Sharp radiation directivity HE8807SL/CL/FL
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HE8807SG/SL/CL/FL
HE8807SG/SL/CL/FL
HE8807SL/CL/FL)
HE8807SG)
HE8807SG
HE8807SL:
HE8807CL:
HE8807FL:
HE8807SL)
HE8807CL
XP20W
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HE8807CL
Abstract: HL7851
Text: Product Lineup-Visible and Infrared Laser Diodes t 10 : Under development Product Lineup Visible and Infrared Laser Diodes cont 1— Ì Wavelength Optical Output 785 nm 5 mW internal circuit L D ^ PD L°ypD Main application Part No. HL7836MG Laser beam
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HL7836MG
HL7843MG
HL7859MGt
HL7853MG
HL7851G
HL7852G
HL8325G
HR1103CX
HR11Q4CX
HR1107CR
HE8807CL
HL7851
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2544S
Abstract: HE8807CL HL785
Text: Package Variations Laser diodes Packages Open-air type ^ Features ^ Applicable Products * For experimental use • For module assembly HL1362A, HL1551A • For module assembly HL1362AC, HL1551AC • For module assembly HL1553 • With built-in monitor-photodiode
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HL1362A,
HL1551A
HL1362AC,
HL1551AC
HL6712G,
HL6713G
HL1553
HL6312G,
HL6313G,
HL6714G,
2544S
HE8807CL
HL785
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