G1735
Abstract: No abstract text available
Text: GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. G1735 G1736 G1737 G1738
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G1735
G1736
G1737
G1738
G1740
G3297
KGPD1003E02
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G1735
Abstract: G1736 G1737 G1738 G1740 G3297
Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings
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G1735
G1736
G1737
G1738
G1740
G3297
SE-171
KGPD1003E01
G1735
G1736
G1737
G1738
G1740
G3297
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G1735
Abstract: G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735
Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings
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G1735
G1736
G1737
G1738
G1740
G3297
SE-171
KGPD1003E01
G1735
G1736
G1737
G1738
G1740
G3297
Borosilicate
Hamamatsu G1735
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Hamamatsu G1735
Abstract: G1735
Text: GaAsP photodiodes Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. Dimensional outline/
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G1735
G1736
G1737
G1738
G1740
KGPD1003E03
Hamamatsu G1735
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HP 5082-4204
Abstract: UDT Pin-040A photodiode amplifier OPA128 SD-041-11-21-011 fast photodiode amplifier hp 5082-4204 pin photodiode 760nm photodiode 5082-4204 J FET RF Cascode Input
Text: DESIGNING PHOTODIODE AMPLIFIER CIRCUITS WITH OPA128 The OPA128 ultra-low bias current operational amplifier achieves its 75fA maximum bias current without compromise. Using standard design techniques, serious performance trade-offs were required which sacrificed overall
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OPA128
OPA128
HP 5082-4204
UDT Pin-040A
photodiode amplifier
SD-041-11-21-011
fast photodiode amplifier
hp 5082-4204 pin photodiode
760nm photodiode
5082-4204
J FET RF Cascode Input
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HP 5082-4204
Abstract: hp 5082-4204 pin photodiode 5082-4204 photodiode amplifier UDT-PIN photodiode bias circuit SBOA061 fast photodiode amplifier hp 5082 4204 pin photodiode Pin-040A
Text: DESIGNING PHOTODIODE AMPLIFIER CIRCUITS WITH OPA128 The OPA128 ultra-low bias current operational amplifier achieves its 75fA maximum bias current without compromise. Using standard design techniques, serious performance trade-offs were required which sacrificed overall
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Original
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OPA128
OPA128
HP 5082-4204
hp 5082-4204 pin photodiode
5082-4204
photodiode amplifier
UDT-PIN
photodiode bias circuit
SBOA061
fast photodiode amplifier
hp 5082 4204 pin photodiode
Pin-040A
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S2840
Abstract: No abstract text available
Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.
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0003b5G
S2829
S4404-01
S2041
S2042
KSPDA0061EA
KSPDA0062EA
D003t
G2711-01
S2833-04,
S2840
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P873-G35-552
Abstract: p1760-04 P873-13
Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel oped a variety of opto-electronic semiconductor de vices. These competitively priced high quality products are designed to meet the requirements of general and
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S-114
DK-2000
JAN/87
P873-G35-552
p1760-04
P873-13
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G1122
Abstract: G1118 G1117
Text: HAMAMATSU CORP tn DE ODOaDDb T GaAsp Photodiodes 422J96Û 9 HAM AM ATSU 890 CORP Photosensitive Surface Spectral Response T *- H i - 5" I Characteristics 25°C Package (mm) (mm2) (nm) (nm) Short Circuit Current Peak Wave length 560nm • GaP LED lsh, 1(
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145Ec
560nm-GaP
633nm
G1115
G1116
G1117
G1118
G1120
G1118
G1120
G1122
G1117
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g1962-01
Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt
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100lux
2856K
1Q-90%
G1117
G1120
G2711
G1735
G1736
G1737
G1738
g1962-01
u1116
G1126-02
hamamatsu PIN TO5
3x1015
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Untitled
Abstract: No abstract text available
Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current
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0GG5532
560nm
633nm
G1116
G1117
G1118
G1120
S1133,
S1133-03,
S1787
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C2719
Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Text: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for
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S4282-11
S4285-40
S4810
KSPDA00060EA
S2833
S2833-01
KSPDA0061EA
KSPDA0062EA
D003t
G2711-01
C2719
S1190-01
s1223 pin photodiode
S4160 equivalent
s12271010b
S4753
S3407-01
hamamatsu S1336
S4160
G1118
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