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    HAMAMATSU G1118 Search Results

    HAMAMATSU G1118 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    REG1118-2.85/2K5 Texas Instruments Single Output LDO, 800mA, Fixed(2.85V), Current Source and Sink Capability 4-SOT-223 0 to 125 Visit Texas Instruments Buy
    REG1118-2.85/2K5G4 Texas Instruments Single Output LDO, 800mA, Fixed(2.85V), Current Source and Sink Capability 4-SOT-223 0 to 125 Visit Texas Instruments Buy
    REG1118-2.85 Texas Instruments Single Output LDO, 800mA, Fixed(2.85V), Current Source and Sink Capability 4-SOT-223 0 to 125 Visit Texas Instruments Buy

    HAMAMATSU G1118 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications Low dark current Analytical instrument High stability Color identification Structure / Absolute maximum ratings Type no. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 KGPD1002E02

    G1120

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications Low dark current Analytical instrument High stability Color identification Structure / Absolute maximum ratings Type no. G1115 G1116 G1117 G1118 G1120 G3067 G2711-01


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 KGPD1002E02 G1120

    AM 5888

    Abstract: g1116 5888 C 5888 G1118 G1120 Photodiode g1117 G1115 G1117 G2711-01
    Text: PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification • General ratings / Absolute maximum ratings Type No. G1115 G1116 G1117


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 SE-171 KGPD1002E01 AM 5888 g1116 5888 C 5888 G1118 G1120 Photodiode g1117 G1115 G1117 G2711-01

    AM 5888

    Abstract: G1118 G1116 G1120 G1115 G1117 G2711-01 G3067 Hamamatsu G1118
    Text: PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification • General ratings / Absolute maximum ratings Type No. G1115 G1116 G1117


    Original     		PDF G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 SE-171 KGPD1002E01 AM 5888 G1118 G1116 G1120 G1115 G1117 G2711-01 G3067 Hamamatsu G1118

    S2840

    Abstract: No abstract text available
    Text: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


    OCR Scan     		PDF 0003b5G S2829 S4404-01 S2041 S2042 KSPDA0061EA KSPDA0062EA D003t G2711-01 S2833-04, S2840

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


    OCR Scan     		PDF 00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863

    S1190 hamamatsu

    Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
    Text: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K


    OCR Scan     		PDF 42STbGT S1188-02 S1188-06 S2216-01 S2216-02 S1190 S1190-01 S1190-03 S1190-04 S1223 S1190 hamamatsu S2856 S2216 02 S2164-01

    G1961-01

    Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
    Text: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)


    OCR Scan     		PDF Q002S3ti 254nm 400nm G1961 G1962 G1963 G1961-01 G1962-01 S1087, S1087-03 S1190 hamamatsu S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ

    G1122

    Abstract: G1118 G1117
    Text: HAMAMATSU CORP tn DE ODOaDDb T GaAsp Photodiodes 422J96Û 9 HAM AM ATSU 890 CORP Photosensitive Surface Spectral Response T *- H i - 5" I Characteristics 25°C Package (mm) (mm2) (nm) (nm) Short Circuit Current Peak Wave­ length 560nm • GaP LED lsh, 1(


    OCR Scan     		PDF 145Ec 560nm-GaP 633nm G1115 G1116 G1117 G1118 G1120 G1118 G1120 G1122 G1117

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


    OCR Scan     		PDF 560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


    OCR Scan     		PDF S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


    OCR Scan     		PDF 0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787

    S1133-02

    Abstract: S1133-11 S1133-03 S2216 02 S2164 S1190 hamamatsu S1087 Hamamatsu S1087 light S2357 Hamamatsu S1133
    Text: HAMAMATSU Silicon CORP 1TE D • 42SU0*! 00 DE S 2t . 5 ■ 'p*|-S\ P h O tO d lO d e S Visible Light/Visible Light to IR Photometry Photosensitive surface Spectral Response Outlines Type No. Features S1087-01 For visible light to near IR S1087 For visible light


    OCR Scan     		PDF 42SU0* S1087-01 S1087 S1087-03 S2164 S2164-01 S2357 S1133-01 S1133-11 S1133 S1133-02 S1133-03 S2216 02 S1190 hamamatsu Hamamatsu S1087 light Hamamatsu S1133