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Abstract: No abstract text available
Text: Preliminary Datasheet H5N5005PL-E0-E 500V - 60A - MOS FET High Speed Power Switching R07DS1199EJ0300 Rev.3.00 Mar 25, 2014 Features • Low on-resistance RDS on = 0.070 Ω typ. (at ID = 30 A, VGS= 10 V, Ta = 25°C) • Low leakage current • High speed switching
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H5N5005PL-E0-E
R07DS1199EJ0300
PRSS0003ZC-A
O-264)
Chan2886-9022/9044
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H5N5005PL
Abstract: PRSS0004ZF-A Renesas h5n5005pl
Text: H5N5005PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0419-0300 Rev.3.00 May 25, 2006 Features • • • • • • Low on-resistance: RDS on = 0.070 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω)
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H5N5005PL
REJ03G0419-0300
PRSS0004ZF-A
H5N5005PL
PRSS0004ZF-A
Renesas h5n5005pl
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Hitachi DSA0076
Abstract: H5N5005PL
Text: H5N5005PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1382 Z Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low on-resistance: R DS(on) = 0.064 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A)
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H5N5005PL
ADE-208-1382
Hitachi DSA0076
H5N5005PL
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H5N5005PL
Abstract: H5N5005PL-E PRSS0004ZF-A
Text: H5N5005PL Silicon N Channel MOS FET High Speed Power Switching REJ03G0419-0400 Rev.4.00 May 13, 2009 Features • • • • • • Low on-resistance: RDS on = 0.070 Ω typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω)
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H5N5005PL
REJ03G0419-0400
PRSS0004ZF-A
H5N5005PL
H5N5005PL-E
PRSS0004ZF-A
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2SK3235
Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting
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HAT2038R/HAT2038RJ
ADE-208-666C
HAT2038R
HAT2038RJ
pdf\7420e
HAT1044M
HAT1053M
2SK3235
2SK3379
Hitachi DSA00276
HAT1040T
2SJ517
2SK1835
TO220CFM
2SK3421
HAT1053
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H5N5005PL
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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7054F
Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver
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2sc4537
2sc454.
2sc4591
2sc4592
2sc4593
2sc460.
2sc4628
2sc4629
2sc4643
2sc4680
7054F
BC564A
HA13563
AC123A
HITACHI microcontroller H8 534 manual
IC 74LS47
AC538
BC245A
2SK3235
HA13557
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HAT2180RP
Abstract: HAT1125H HA17341 HAT1128R HAT1125 2SK3235 smps circuit diagrams dvd and audio system hat2211 hat2180 circuit diagram for 48v automatic battery charger
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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REJ27G0013-0100/Rev
HAT2180RP
HAT1125H
HA17341
HAT1128R
HAT1125
2SK3235
smps circuit diagrams dvd and audio system
hat2211
hat2180
circuit diagram for 48v automatic battery charger
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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2SJ1334
Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Text: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
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HA16142P/FP
ADE-504-006
DO-35
DO-41
HA16142P/FP
2SJ1334
2SK3235
HSK81
Hitachi DSAUTAZ006
HA16141
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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H5N5005PL-E
Abstract: H5N5005PL PRSS0004ZF-A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Hdd spindle motor
Abstract: HAT2256R HAT3038 HAT3019R HAT1132R HAT2276R HAT3037R polygon mirror polygon mirror motor RQK0603DQA
Text: April 2010 Renesas Electronics Power MOSFETs for Small Motor Drive Features Low ON resistance Low voltage drive 4V Small package Built-in high-speed diode Merits Low loss, High efficiency Available direct drive from logic IC and reduction of the number of any parts
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O-220CFM
H5N5004PL
H5N5005PL
RJL5012DPP
O-220FN
RJL5013DPP
RJL5014DPP
RJL5014DPK
Hdd spindle motor
HAT2256R
HAT3038
HAT3019R
HAT1132R
HAT2276R
HAT3037R
polygon mirror
polygon mirror motor
RQK0603DQA
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TO220CFM
Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T
Text: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D
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HAT1024R
ADE-208-476G
pdf\7420e
HAT1044M
HAT1053M
HAT2053M
HAT2054M
TO220CFM
TO220FM
2sk3148
2SK2978
hat2070
TO-220aB rr
Hitachi DSA00276
2SK2096
HAT1040T
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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