Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GT30G121 Search Results

    SF Impression Pixel

    GT30G121 Price and Stock

    Toshiba America Electronic Components GT30G121

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics GT30G121 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    GT30G121 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT30G121 Toshiba Discrete IGBTs Original PDF

    GT30G121 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original     		BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101 PDF