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    GT35 Search Results

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    GT35 Price and Stock

    JRH Electronics MTSW-107-08-G-T-350

    CONN HEADER VERT 21POS 2.54MM
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    DigiKey MTSW-107-08-G-T-350 Bulk 735 1
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    JRH Electronics MTSW-110-12-G-T-350

    CONN HEADER VERT 30POS 2.54MM
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    DigiKey MTSW-110-12-G-T-350 Bulk 220 1
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    JRH Electronics ZW-12-09-G-T-356-090

    STACKING BOARD CONNECTOR, ZW SER
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    DigiKey ZW-12-09-G-T-356-090 Bulk 163 1
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    JRH Electronics TW-20-06-G-T-350-130

    STACKING BOARD CONNECTOR, TW SER
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    DigiKey TW-20-06-G-T-350-130 Bulk 61 1
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    Samtec Inc DW-22-09-G-T-350

    CONN HDR 66POS 0.1 STACK T/H
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    DigiKey DW-22-09-G-T-350 Bulk 49 1
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    Avnet Americas DW-22-09-G-T-350 Bulk 1 Weeks 1
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    Mouser Electronics DW-22-09-G-T-350
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    Newark DW-22-09-G-T-350 Bulk 127 1
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    Powell Electronics DW-22-09-G-T-350 84 1
    • 1 $9.45
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    Master Electronics DW-22-09-G-T-350
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    Sager DW-22-09-G-T-350 127 1
    • 1 $9.45
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    GT35 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT35 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    GT3585 GTM N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Original PDF
    GT35F131 Toshiba Discrete IGBTs Original PDF
    GT35J321 Toshiba GT35J321 - TRANSISTOR 37 A, 600 V, N-CHANNEL IGBT, LEAD FREE, 2-16F1A, TO-3P(N)IS, 3 PIN, Insulated Gate BIP Transistor Original PDF
    GT35MR21 Toshiba GT35MR21 - TRANSISTOR IGBT, Insulated Gate BIP Transistor Original PDF

    GT35 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT3585

    Abstract: No abstract text available
    Text: Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT3585 provide the designer with best combination of fast switching, low on-resistance and


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    PDF GT3585 GT3585 OT-26

    Untitled

    Abstract: No abstract text available
    Text: GT35MR21 Discrete IGBTs Silicon N-Channel IGBT GT35MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


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    PDF GT35MR21

    GT35MR21

    Abstract: No abstract text available
    Text: GT35MR21 Discrete IGBTs Silicon N-Channel IGBT GT35MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


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    PDF GT35MR21 GT35MR21

    GT3528

    Abstract: GT3528/L2C-B50634C6CB2/2T GT3528-L2C GT3528/L2C-B50634C6CB2 GT3528-Q2C 4234 GT3528/Q2C b4556 in 4436
    Text: Technical Data Sheet Top View LEDs GT3528/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3528 has wide


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    PDF GT3528/X2C-BXXXXXXXXX/2T GT3528 09-Apr GT3528/L2C-B50634C6CB2/2T GT3528-L2C GT3528/L2C-B50634C6CB2 GT3528-Q2C 4234 GT3528/Q2C b4556 in 4436

    gt35j321

    Abstract: No abstract text available
    Text: GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications Unit: mm Enhancement mode High speed: tf = 0.19 s typ. (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A)


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    PDF GT35J321 gt35j321

    GT3528

    Abstract: GT3528-L2C GT3528/L2C-B50634C6CB2 GT3528/L2C-B50634C6CB2/2T X2C-BXXXXXXXXX
    Text: Technical Data Sheet Top View LEDs GT3528/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3528 has wide


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    PDF GT3528/X2C-BXXXXXXXXX/2T GT3528 10-May-chnical 10-May-2010 GT3528-L2C GT3528/L2C-B50634C6CB2 GT3528/L2C-B50634C6CB2/2T X2C-BXXXXXXXXX

    Untitled

    Abstract: No abstract text available
    Text: Technical Data Sheet Top View LEDs GT3528/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3528 has wide


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    PDF GT3528/X2C-BXXXXXXXXX/2T GT3528 03-Mar

    GT35J321

    Abstract: gt35j321 data gt35j
    Text: GT35J321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z Enhancement mode z High speed: tf = 0.19 s typ. (IC = 50 A) z Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A)


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    PDF GT35J321 GT35J321 gt35j321 data gt35j

    GT35J321

    Abstract: DT3001 IC860 gt35j
    Text: GT35J321 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT35J321 ○ 第 4 世代 ○ 電流共振インバータスイッチング用 • • • • • 単位: mm 取り扱いが簡単なエンハンスメントタイプです。


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    PDF GT35J321 2-16F1A 20070701-JA GT35J321 DT3001 IC860 gt35j

    Untitled

    Abstract: No abstract text available
    Text: GT35MR21 Discrete IGBTs Silicon N-Channel IGBT GT35MR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


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    PDF GT35MR21

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


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    PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    R2A25416SP

    Abstract: SH7777 Renesas SH72546 Renesas SH72543 SH72544 car ECU training sh72543 R5E72546RKBG SH 72546 Wiring Diagram of NIPPON car center lock system
    Text: 2009.10 Renesas Automotive www.renesas.com Introduction 1 Introduction 1 Imagination to Realize. Renesas Automotive Automotive Semiconductor Devices for the Future of Car Electronics The wider use of electronics in motor vehicles brings new requirements for automotive semiconductor devices.


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    PDF REJ01F0001-0300 R2A25416SP SH7777 Renesas SH72546 Renesas SH72543 SH72544 car ECU training sh72543 R5E72546RKBG SH 72546 Wiring Diagram of NIPPON car center lock system

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    Untitled

    Abstract: No abstract text available
    Text: Device Under Test: 90HBW08PT, 90HBW10PT, 90B08ST, 90B05ST, 90B10ST Environmental Test: Thermal Shock, Moisture resistance, Thermal aging, Resistance to Reflow Physical Test: Mechanical Life, Mechanical shock, Vibration Resistance, Terminal Strength Flammability, Solderability, Process seal


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    PDF 90HBW08PT, 90HBW10PT, 90B08ST, 90B05ST, 90B10ST SM04-17 SM04-17 MIL-STD-202,

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


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    PDF TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    SJV50

    Abstract: wpce773 G9091-330T11U-GP winbond WPCE773 G7922R61U N10M-GE1 WISTRON power sequence M08B1 DT2 UMA isl88731
    Text: 5 D 4 3 2 1 SYSTEM DC/DC Project code: 91.4BU01.001 PCB P/N : 48.4BU01.0SB REVISION : 08244-SB SJV50 Block Diagram CLK GEN. ISL62392 INPUTS 41 OUTPUTS 5V_S5 6A DCBATOUT 3D3V_S5(7A) 5V_AUX_S5 3D3V_AUX_S5 GMT Mobile CPU G7922R61U Penryn ICS9LPRS365B 33 3 VRAM


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    PDF SJV50 ICS9LPRS365B 4BU01 08244-SB ISL62392 G7922R61U TPS51124 512MB 667/800/1066MHz wpce773 G9091-330T11U-GP winbond WPCE773 G7922R61U N10M-GE1 WISTRON power sequence M08B1 DT2 UMA isl88731

    R2A11301FT

    Abstract: SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas
    Text: Renesas Automotive www.renesas.com 2011.10 Renesas Automotive Introduction "Green" Automotive Initiative Leading the World with a Wide-Ranging Product Lineup • Application Systems ■ Renesas Products Contents 01 ■ Renesas Constituent Technologies HEV/EV


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    PDF /533MHz BGA-832 BGA-472 BGA-429 BGA-720 BGA-653 R2A11301FT SH7766 R2A25108KFP 2SC5664 PowerVR SGX530 PowerVR SGX540 car ecu wiring system service manual R2A25104KFP V850E2 fx4 DJ4 renesas

    UJT-2N2646 PIN DIAGRAM DETAILS

    Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
    Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect


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    PDF Semi260 TY510 TY6004 TY6008 TY6010 TY8008 TY8010 2N6394 MCR218-8 UJT-2N2646 PIN DIAGRAM DETAILS speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402

    GT50

    Abstract: GT-32 triangle KDI TO-30D GT40 kdi switch GT35 GT30 GT-29
    Text: CURRENT CONTROLLED ABSORPTIVE, CONTINUOUSLY VARIABLE ATTENUATORS, PIN DIODE SERIES GT 0.25-18 GHz GENERAL INFORMATION: KDI/Triangle's pin diode attenu­ ators continuously change the amplitude o f a microwave sig­ nal by applying a varying current. A matched configuration


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    PDF to20dB 75dB8 GT50 GT-32 triangle KDI TO-30D GT40 kdi switch GT35 GT30 GT-29

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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