Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GT30 Search Results

    GT30 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    GT30 Price and Stock

    ROHM Semiconductor RGT30NS65DGC9

    IGBT TRENCH FIELD 650V 30A TO262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RGT30NS65DGC9 Tube 2,896 1
    • 1 $1.94
    • 10 $1.94
    • 100 $1.3176
    • 1000 $1.28876
    • 10000 $1.28876
    		Buy Now
    Mouser Electronics RGT30NS65DGC9 889
    • 1 $1.94
    • 10 $1.94
    • 100 $1.32
    • 1000 $1.28
    • 10000 $1.28
    		Buy Now
    Ameya Holding Limited RGT30NS65DGC9 35 1
    • 1 $2.9
    • 10 $2.6
    • 100 $2.1311
    • 1000 $1.5465
    • 10000 $1.5465
    		Buy Now
    CoreStaff Co Ltd RGT30NS65DGC9 47
    • 1 $0.505
    • 10 $0.492
    • 100 $0.473
    • 1000 $0.47
    • 10000 $0.47
    		Buy Now

    Viking Technology WL05GT30N

    FIXED IND 30NH 500MA 250MOHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey WL05GT30N Reel 2,000 1
    • 1 $0.05
    • 10 $0.05
    • 100 $0.05
    • 1000 $0.05
    • 10000 $0.05
    		Buy Now

    Acopian Power Supplies B34GT30

    AC/DC CONVERTER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B34GT30 Bulk 1,000 1
    • 1 $240.5
    • 10 $230.5
    • 100 $225.5
    • 1000 $225.5
    • 10000 $225.5
    		Buy Now

    Acopian Power Supplies B32GT30

    AC/DC CONVERTER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B32GT30 Bulk 1,000 1
    • 1 $240.5
    • 10 $230.5
    • 100 $225.5
    • 1000 $225.5
    • 10000 $225.5
    		Buy Now

    Acopian Power Supplies B35GT30

    AC/DC CONVERTER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B35GT30 Bulk 1,000 1
    • 1 $240.5
    • 10 $230.5
    • 100 $225.5
    • 1000 $225.5
    • 10000 $225.5
    		Buy Now
    Find more GT30 price and stock on Findchips.com

    GT30 Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT-30 MCE / KDI ATTENUATOR, PIN DIODE Original PDF
    GT300AL-16 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    GT300AL16 Powerex Asymmetrical GTO Thyristors Scan PDF
    GT300AL-20 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    GT300AL20 Powerex Asymmetrical GTO Thyristors Scan PDF
    GT300AL-24 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    GT300AL24 Powerex Asymmetrical GTO Thyristors Scan PDF
    GT300AL-32 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    GT300AL32 Powerex Asymmetrical GTO Thyristors Scan PDF
    GT300AV70 Powerex Asymmetrical GTO Thyristors Scan PDF
    GT300AV80 Powerex Asymmetrical GTO Thyristors Scan PDF
    GT300AV90 Powerex Asymmetrical GTO Thyristors Scan PDF
    GT30-100-100-0.23 t-Global Technology Thermal - Pads, Sheets, Fans, Thermal Management, GT30 100X100X0.23M Original PDF
    GT30-100-100-0.23-0 t-Global Technology Thermal - Pads, Sheets, Fans, Thermal Management, GT30 SHEET 100X100X0.23MM Original PDF
    GT30-300-300-0.23-0 t-Global Technology Thermal - Pads, Sheets, Fans, Thermal Management, GT30 SHEET 300X300X0.23MM Original PDF
    GT303J1K US Sensor/Littelfuse Sensors, Transducers - Temperature Sensors - NTC Thermistors - NTC THERMISTOR 30K OHM 10% BEAD Original PDF
    GT305A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT305B Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT305V Unknown Shortform Transistor Datasheet Guide Short Form PDF
    GT308A Unknown Shortform Transistor Datasheet Guide Short Form PDF

    GT30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GT30J341 ディスクリートIGBT シリコンNチャネルIGBT GT30J341 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 30 A) (3) 接合温度が高い: Tj = 175 (最大) (4)


    Original     		PDF GT30J341

    Untitled

    Abstract: No abstract text available
    Text: VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt antiparallel and clamping diodes • Short circuit capability • Speed 4 kHz to 30 kHz


    Original     		PDF VS-GT300FD060N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    GT3020

    Abstract: in 4436 MARK 2T X2C-BXXXXXXXXX 10MAY2010 Q2C-B2832AC2
    Text: Technical Data Sheet Top View LEDs GT3020/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3020 has wide


    Original     		PDF GT3020/X2C-BXXXXXXXXX/2T GT3020 10-May-chnical 10-May-2010 in 4436 MARK 2T X2C-BXXXXXXXXX 10MAY2010 Q2C-B2832AC2

    Untitled

    Abstract: No abstract text available
    Text: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)


    Original     		PDF GT30J122

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J121 High Power Switching Applications Fast Switching Applications ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS :Operating frequency up to 50kHz(Reference)


    Original     		PDF GT30J121 50kHz Tj125

    GT30J101

    Abstract: GT30J301
    Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT30J101 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT30J101 2-16C1C GT30J101 GT30J301

    GT30J126

    Abstract: GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba
    Text: GT30J126 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT30J126 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ


    Original     		PDF GT30J126 2-16F1A 20070701-JA GT30J126 GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba

    GT30J101

    Abstract: GT30J301
    Text: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)


    Original     		PDF GT30J101 GT30J101 GT30J301

    GT30J324

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324 GT30J324

    GT30J301

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT30J301 GT30J301

    GT30J301

    Abstract: failure report IGBT
    Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s Max. z Low saturation voltage


    Original     		PDF GT30J301 GT30J301 failure report IGBT

    GT30J121

    Abstract: GT30J324
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121 GT30J121 GT30J324

    IGBT GT30J121

    Abstract: GT30J121 GT30J324
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121 IGBT GT30J121 GT30J121 GT30J324

    Untitled

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT30J301

    GT30J322

    Abstract: MARKING toshiba
    Text: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed z Low saturation voltage


    Original     		PDF GT30J322 GT30J322 MARKING toshiba

    in 4436

    Abstract: GT3020
    Text: Technical Data Sheet Top View LEDs GT3020/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3020 has wide


    Original     		PDF GT3020/X2C-BXXXXXXXXX/2T GT3020 13-Apr in 4436

    GT300FD060N

    Abstract: No abstract text available
    Text: VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt antiparallel and clamping diodes • Short circuit capability • Speed 4 kHz to 30 kHz


    Original     		PDF VS-GT300FD060N E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 GT300FD060N

    GT30J301

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)


    Original     		PDF GT30J301 GT30J301

    RKM 40

    Abstract: No abstract text available
    Text: Housing Style 30 mm - Nonembeddable, minifast Connection, Teflon Coated Part Number Ni20U-GT30-ADZ30X2-B1131 ID Number M4281822 Features Sen s Ran ing ge m m Inductive Sensors Output 20 2-Wire AC/DC Short-Circuit Protected 30 mm - Nonembeddable, Right Angle minifast Connection


    Original     		PDF Ni20U-GT30-ADZ30X2-B1131 M4281822 Ni15-G30-AN6X-B1441 T4695590 Ni15-G30-AP6X-B1441 T4697000 Ni15-G30-AZ3X-B1431 T4372700 RKM 40

    Untitled

    Abstract: No abstract text available
    Text: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage


    Original     		PDF GT30J301

    Untitled

    Abstract: No abstract text available
    Text: GT30 High Thermal Conductivity Glassfiber Reinforcement Features Natural tack Smooth surface & low thermal contact resistance Exceptional thermal performance at lower application pressures 20psi~400psi Usable over a wide temperture range Simplified processing and reduced operating costs


    Original     		PDF 20psi 400psi) D5470 D2240

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.


    OCR Scan     		PDF GT30J301

    Untitled

    Abstract: No abstract text available
    Text: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)


    OCR Scan     		PDF GT30J311 30/iS

    GT30J322

    Abstract: No abstract text available
    Text: TOSHIBA GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT30J322 THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • • FRD Included Between Emitter and Collector Enhancement-Mode High Speed


    OCR Scan     		PDF GT30J322 GT30J322