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    Murata Manufacturing Co Ltd GRM32NR72A104KA01L

    CAP CER 0.1UF 100V X7R 1210
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    DigiKey GRM32NR72A104KA01L Cut Tape 36,764 1
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    GRM32NR72A104KA01L Digi-Reel 36,764 1
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    GRM32NR72A104KA01L Reel 34,000 2,000
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    Avnet Americas GRM32NR72A104KA01L Reel 10 Weeks 10,000
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    Mouser Electronics GRM32NR72A104KA01L 2,219
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    Verical GRM32NR72A104KA01L 1,857 418
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    Arrow Electronics GRM32NR72A104KA01L Cut Strips 1,857 10 Weeks 418
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    Future Electronics GRM32NR72A104KA01L Reel 10 Weeks 10,000
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    Bristol Electronics GRM32NR72A104KA01L 12,000
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    GRM32NR72A104KA01L 7,559
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    GRM32NR72A104KA01L 835 13
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    Quest Components GRM32NR72A104KA01L 9,600
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    GRM32NR72A104KA01L 4,480
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    GRM32NR72A104KA01L 668
    • 1 $0.55
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    TTI GRM32NR72A104KA01L Reel 4,000 2,000
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    Velocity Electronics GRM32NR72A104KA01L 1,361
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    Avnet Abacus GRM32NR72A104KA01L Reel 2,000 11 Weeks 2,000
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    Murata Manufacturing GRM32NR72A104KA01L

    Capacitors
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    Vyrian GRM32NR72A104KA01L 8,425
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    GRM32NR72A104KA01L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GRM32NR72A104KA01L muRata Ceramic Capacitors, Capacitors, CAP CER 0.1UF 100V 10% X7R 1210 Original PDF

    GRM32NR72A104KA01L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SNVS629

    Abstract: lm5050-1
    Text: User's Guide SNVA458A – April 2011 – Revised May 2013 AN-2087 LM5050-1EVAL Evaluation Board 1 Introduction The LM5050-1 evaluation board is designed to demonstrate the capabilities of the LM5050-1 OR-ing Diode Controller. One high side N-channel power MOSFET is used. The LM5050-1 evaluation board


    Original     		SNVA458A AN-2087 LM5050-1EVAL LM5050-1 LM5050-1High SNVS629) SNVS629 PDF

    EI -40C

    Abstract: No abstract text available
    Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical


    Original     		RF3933 DS120306 EI -40C PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To


    Original     		RFG1M09180 700MHZ 1000MHZ 1000MHZ RF400-2 865MHz 960MHz 47dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology


    Original     		RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm PDF

    RFG1M20180

    Abstract: ATC800B820JT
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


    Original     		RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical


    Original     		RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc PDF

    RFG1M20180SB

    Abstract: j35 fet RFG1M20180SQ
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


    Original     		RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		RF3931 900MHz EAR99 RF3931 DS120306 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical


    Original     		RF3934 RF3934 DS120306 PDF

    ATC800A

    Abstract: RF3931 ER35
    Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ „ Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB


    Original     		RF3931 EAR99 RF3931 cellul01L GRM55ER72A475KA01L 100uF, ECE-V1HA101UP ATC800A ER35 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to


    Original     		RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406 PDF

    GRM55ER72A475KA01L

    Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance


    Original     		RF3934 RF3934 DS111005 GRM55ER72A475KA01L DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		RFHA1027 RFHA1027 DS131216 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed


    Original     		RFG1M20090 RFG1M20090 DS130823 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier


    Original     		RF3934 RF3934 DS131206 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 180W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20180 is optimized for commercial infrastructure applications in the 1.8GHz to 2.2GHz frequency band, ideal for WCDMA and LTE applications. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high


    Original     		RFG1M20180 RFG1M20180 DS130822 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    amplifier 900mhz

    Abstract: No abstract text available
    Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Gain = 15dB at 2GHz  48V Operation Typical Performance at 900MHz


    Original     		RF3931 900MHz RF3931 DS130501 amplifier 900mhz PDF

    Untitled

    Abstract: No abstract text available
    Text: RF3933 90W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical


    Original     		RF3933 RF3933 DS121207 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		RFHA1027 RFHA1027 DS131220 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 125W GaN Power Amplifier 225MHz to 450MHz The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride GaN


    Original     		RFHA1042 225MHz 450MHz RFHA1042 450MHz DS131023 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 1.8GHz to 2.2GHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >90W  Advanced Heat-Sink Technology  Single Circuit for 1.9GHz to 2.2GHz  48V Operation Typical Performance


    Original     		RFG1M20090 RF400-2 44dBm -35dBc -55dBc RFG1M20090 DS130506 PDF

    Untitled

    Abstract: No abstract text available
    Text: RFG1M09180 RFG1M09180 180W GaN Power Amplifier 700MHz to 1000MHz The RFG1M09180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 700MHz to 1000MHz frequency band, ideal for WCDMA and LTE applications. Using


    Original     		RFG1M09180 700MHz 1000MHz RFG1M09180 700MHz 1000MHz DS130823 PDF