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    100A0R9BT150X Search Results

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    100A0R9BT150X Price and Stock

    Kyocera AVX Components 100A0R9BT150XT

    0505 | SMD Chip | 150 VDC | P90 | 0.9pF | 0.1pF | Sn | T&R 7in (180mm) - Custom Tape W/Leader (Alt: 100A0R9BT150XT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 100A0R9BT150XT Tape w/Leader 16 Weeks 500
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    Mouser Electronics 100A0R9BT150XT 473
    • 1 $3.75
    • 10 $2.88
    • 100 $2.38
    • 1000 $1.87
    • 10000 $1.8
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    Richardson RFPD 100A0R9BT150XT 500
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    • 1000 $1.58
    • 10000 $1.12
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    Kyocera AVX Components 100A0R9BT150XC100

    MLC A/B/R - Waffle Pack (Alt: 100A0R9BT150XC100)
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    Avnet Americas 100A0R9BT150XC100 Waffle Pack 16 Weeks 100
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    Mouser Electronics 100A0R9BT150XC100
    • 1 $5.17
    • 10 $4.45
    • 100 $3.33
    • 1000 $2.9
    • 10000 $2.9
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    TTI 100A0R9BT150XC100 WAFL 100
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    Richardson RFPD 100A0R9BT150XC100 351 200
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    Kyocera AVX Components 100A0R9BT150XTV

    MLC A/B/R - Bulk (Alt: 100A0R9BT150XTV)
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    Avnet Americas 100A0R9BT150XTV Bulk 16 Weeks 500
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    Mouser Electronics 100A0R9BT150XTV
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    Kyocera AVX Components 100A0R9BT150XTV1K

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Mouser Electronics 100A0R9BT150XTV1K
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    Kyocera AVX Components 100A0R9BT150XT1K

    Silicon RF Capacitors / Thin Film MLC A/B/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 100A0R9BT150XT1K
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    • 1000 $1.55
    • 10000 $1.54
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    Richardson RFPD 100A0R9BT150XT1K 1,000
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    • 1000 $1.58
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    100A0R9BT150X Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor 1800MHz

    Abstract: r.f. amplifier 30mhz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz r.f. amplifier 30mhz PDF

    rf3826

    Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz PDF

    404j

    Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) 404j transistor 1800MHz 100A0R9BT150X PDF

    EC 401 TRANSISTOR

    Abstract: Gan hemt transistor RFMD transistor 1800MHz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) EC 401 TRANSISTOR Gan hemt transistor RFMD transistor 1800MHz PDF

    transistor 1800MHz

    Abstract: No abstract text available
    Text: RF3826 RF3826 9W GaN Wide-Band Power Amplifier 30MHz to 2500MHz The RF3826 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios, and general purpose amplification. Using an advanced high power density Gallium


    Original     		RF3826 30MHz 2500MHz RF3826 DS130927 transistor 1800MHz PDF

    transistor 1800MHz

    Abstract: No abstract text available
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz PDF

    transistor 1800MHz

    Abstract: No abstract text available
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) transistor 1800MHz PDF